A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device comprising: a first supporter comprising an adhesive; a base insulating film being adhered to the first supporter; and a peeled layer including a semiconductor element on and in contact with the base insulating film.
2. The semiconductor device according to claim 1 , wherein the base insulating film is a material layer, and wherein the material layer is an oxide layer.
3. The semiconductor device according to claim 1 , wherein the first supporter comprises any one of reaction-cured adhesives, thermally-curable adhesives, photo-curable adhesives, and anaerobic adhesive.
4. The semiconductor device according to claim 1 , wherein the first supporter comprises epoxy resin.
5. The semiconductor device according to claim 1 , wherein the semiconductor element is selected from the group consisting of a thin film transistor, a light emitting element having an OLED, an element with liquid crystal, a memory element, a thin film diode, a photoelectric conversion element of silicon PIN junction, and a silicon resistor element.
6. The semiconductor device according to claim 1 , wherein the first supporter is flexible supporter.
7. A semiconductor device comprising: a first supporter comprising a first adhesive; a base insulating film being adhered to the first supporter; a peeled layer including a semiconductor element over the base insulating film; and a second supporter comprising a second adhesive adhered to the peeled layer so that the peeled layer is interposed between the first supporter and the second supporter.
8. The semiconductor device according to claim 7 , wherein the base insulating film is a material layer, and wherein the material layer is an oxide layer.
9. The semiconductor device according to claim 7 , wherein at least one of the first supporter and the second supporter comprises any one of reaction-cured adhesives, thermally-curable adhesives, photo-curable adhesives, and anaerobic adhesive.
10. The semiconductor device according to claim 7 , wherein at least one of the first supporter and the second supporter comprises epoxy resin.
11. The semiconductor device according to claim 7 , wherein the semiconductor element is selected from the group consisting of a thin film transistor, a light emitting element having an OLED, an element with liquid crystal, a memory element, a thin film diode, a photoelectric conversion element of silicon PIN junction, and a silicon resistor element.
12. The semiconductor device according to claim 7 , wherein each of the first supporter and the second supporter is flexible supporter.
13. A semiconductor device comprising: a protective film; a first supporter comprising an adhesive over the protective film; a base insulating film being adhered to the first supporter; and a peeled layer including a semiconductor element on and in contact with the base insulating film.
14. The semiconductor device according to claim 13 , wherein the base insulating film is a material layer, and wherein the material layer is an oxide layer.
15. The semiconductor device according to claim 13 , wherein the first supporter comprises any one of reaction-cured adhesives, thermally-curable adhesives, photo-curable adhesives, and anaerobic adhesive.
16. The semiconductor device according to claim 13 , wherein the first supporter comprises epoxy resin.
17. The semiconductor device according to claim 13 , wherein the semiconductor element is selected from the group consisting of a thin film transistor, a light emitting element having an OLED, an element with liquid crystal, a memory element, a thin film diode, a photoelectric conversion element of silicon PIN junction, and a silicon resistor element.
18. The semiconductor device according to claim 13 , wherein the first supporter is flexible supporter.
19. A semiconductor device comprising: a first supporter comprising an adhesive; a base insulating film being adhered to the first supporter; and a display device including a semiconductor element on and in contact with the base insulating film.
20. The semiconductor device according to claim 19 , wherein the base insulating film is a material layer, and wherein the material layer is an oxide layer.
21. The semiconductor device according to claim 19 , wherein the first supporter comprises any one of reaction-cured adhesives, thermally-curable adhesives, photo-curable adhesives, and anaerobic adhesive.
22. The semiconductor device according to claim 19 , wherein the first supporter comprises epoxy resin.
23. The semiconductor device according to claim 19 , wherein the semiconductor element is selected from the group consisting of a thin film transistor, a light emitting element having an OLED, an element with liquid crystal, a memory element, a thin film diode, a photoelectric conversion element of silicon PIN junction, and a silicon resistor element.
24. The semiconductor device according to claim 19 , wherein the first supporter is flexible supporter.
25. The semiconductor device according to claim 19 , wherein the display device is an EL display or an electrophoresis display device.
26. A semiconductor device comprising: a first supporter comprising a first adhesive; a base insulating film being adhered to the first supporter; a display device including a semiconductor element over the base insulating film; and a second supporter comprising a second adhesive adhered to the display device so that the display device is interposed between the first supporter and the second supporter.
27. The semiconductor device according to claim 26 , wherein the base insulating film is a material layer, and wherein the material layer is an oxide layer.
28. The semiconductor device according to claim 26 , wherein at least one of the first supporter and the second supporter comprises any one of reaction-cured adhesives, thermally-curable adhesives, photo-curable adhesives, and anaerobic adhesive.
29. The semiconductor device according to claim 26 , wherein at least one of the first supporter and the second supporter comprises epoxy resin.
30. The semiconductor device according to claim 26 , wherein the semiconductor element is selected from the group consisting of a thin film transistor, a light emitting element having an OLED, an element with liquid crystal, a memory element, a thin film diode, a photoelectric conversion element of silicon PIN junction, and a silicon resistor element.
31. The semiconductor device according to claim 26 , wherein each of the first supporter and the second supporter is flexible supporter.
32. The semiconductor device according to claim 26 , wherein the display device is an EL display or an electrophoresis display device.
33. The semiconductor device according to claim 26 , wherein the second supporter directly contacts a cathode of the display device.
34. A semiconductor device comprising: a protective film; a first supporter comprising an adhesive over the protective film; a base insulating film being adhered to the first supporter; and a display device including a semiconductor element on and in contact with the base insulating film.
35. The semiconductor device according to claim 34 , wherein the base insulating film is a material layer, and wherein the material layer is an oxide layer.
36. The semiconductor device according to claim 34 , wherein the first supporter comprises any one of reaction-cured adhesives, thermally-curable adhesives, photo-curable adhesives, and anaerobic adhesive.
37. The semiconductor device according to claim 34 , wherein the first supporter comprises epoxy resin.
38. The semiconductor device according to claim 34 , wherein the semiconductor element is selected from the group consisting of a thin film transistor, a light emitting element having an OLED, an element with liquid crystal, a memory element, a thin film diode, a photoelectric conversion element of silicon PIN junction, and a silicon resistor element.
39. The semiconductor device according to claim 34 , wherein the first supporter is flexible supporter.
40. The semiconductor device according to claim 34 , wherein the display device is an EL display or an electrophoresis display device.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
December 11, 2009
August 9, 2011
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