Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, or other materials and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor module comprising a substrate having an electrode, a chip component mounted on said substrate and a semiconductor chip mounted on said substrate, wherein said chip component is connected to said electrode with a solder bonding material, said solder bonding material being substantially free of lead (Pb) and comprising an intermetallic compound, an amount of unreacted solder on a periphery of said intermetallic compound, and a plurality of copper (Cu) balls disposed in said intermetallic compound, said intermetallic compound having a melting point higher than that of said solder.
2. A semiconductor module according to claim 1 , wherein said intermetallic compound includes Cu 6 Sn 5 .
3. A semiconductor module according to claim 2 , wherein said intermetallic compound further includes Cu 3 Sn.
4. A semiconductor module according to claim 2 , wherein said plurality of Cu balls each has a diameter ≧5 μm.
5. A semiconductor module according to claim 1 , wherein said module comprises an RF module.
6. A semiconductor module according to claim 1 , wherein said module comprises one of a SAW element, a power amplifier module, or a module for monitoring a Li battery.
7. A semiconductor module according to claim 1 , wherein said chip component comprises a chip resistor or a chip capacitor.
8. A semiconductor module according to claim 1 , wherein at least one of said Cu balls is connected to said electrode of said substrate by said intermetallic compound.
9. A semiconductor module according to claim 1 , wherein both of said Cu balls and said intermetallic compound have a melting point greater than 260° C.
10. A semiconductor module according to claim 1 , wherein each of said Cu balls consist substantially entirely of copper.
11. A semiconductor module according to claim 1 , wherein said solder includes Sn and said intermetallic compound includes a CuSn compound.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
April 7, 2006
September 20, 2011
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