A system for improving flip chip performance is provided. In one embodiment, the invention relates to an assembly configured to improve performance of a flip chip device, the assembly including a semiconductor die having an active surface and a back surface, the active surface including a plurality of conductive pads, an interposer substrate having a first surface in electrical contact with the active surface of the semiconductor die and a second surface, a space between the active surface of the semiconductor die and the first surface of the interposer substrate, where the space is essentially free of underfill material, and a carrier substrate having a top surface in electrical contact with the second surface of the interposer.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An assembly configured to improve performance of a flip chip device, the assembly comprising: a semiconductor die having an active surface and a back surface, the active surface comprising a plurality of conductive pads; an interposer substrate having a first surface in electrical contact with the active surface of the semiconductor die and a second surface; a space between the active surface of the semiconductor die and the first surface of the interposer substrate, wherein the space is substantially free of underfill material; a carrier substrate having a top surface in electrical contact with the second surface of the interposer; and an underfill layer between the top surface of the carrier substrate and the second surface of the interposer substrate.
2. An assembly configured to improve performance of a flip chip device, the assembly comprising: a semiconductor die having an active surface and a back surface, the active surface comprising a plurality of conductive pads; an interposer substrate having a first surface in electrical contact with the active surface of the semiconductor die and a second surface; a space between the active surface of the semiconductor die and the first surface of the interposer substrate, wherein the space is substantially free of underfill material; a carrier substrate having a top surface in electrical contact with the second surface of the interposer; a plurality of vias disposed within the interposer, each via having a first contact point disposed at the first surface of the interposer and a second contact point disposed at the second surface of the interposer; a plurality of first solder balls disposed on the first surface of the interposer, wherein each first solder ball disposed at one of the plurality of first contact points; and a plurality of second solder balls disposed on the second surface of the interposer, each second solder ball disposed at one of the plurality of second contact points, wherein each of the plurality of first solder balls is configured to electrically couple one of the plurality of first contact points to one of the plurality of conductive pads, and wherein each of the plurality of second solder balls is configured to electrically couple one of the plurality of second contact points to one of a plurality of conductive pads on the surface of the carrier substrate.
3. An assembly configured to improve performance of a flip chip device, the assembly comprising: a semiconductor die having an active surface and a back surface, the active surface comprising a plurality of conductive pads; an interposer substrate having a first surface in electrical contact with the active surface of the semiconductor die and a second surface; a space between the active surface of the semiconductor die and the first surface of the interposer substrate, wherein the space is substantially free of underfill material; and a carrier substrate having a top surface in electrical contact with the second surface of the interposer, wherein the space contains air.
4. The assembly of claim 1 , wherein the space consists essentially of air.
5. The assembly of claim 1 , wherein the underfill layer comprises a non-conductive adhesive material.
6. The assembly of claim 1 , further comprising: at least one circuit component mounted to the interposer substrate and electrically coupled to the semiconductor die.
7. The assembly of claim 6 , wherein the at least one circuit component comprises a passive component.
8. The assembly of claim 7 , wherein the passive component comprises a capacitor.
9. An assembly configured to improve performance of a flip chip device, the assembly comprising: a semiconductor die having an active surface and a back surface, the active surface comprising a plurality of conductive pads; an interposer substrate having a first surface in electrical contact with the active surface of the semiconductor die and a second surface; a space between the active surface of the semiconductor die and the first surface of the interposer substrate, wherein the space is substantially free of underfill material; and a carrier substrate having a top surface in electrical contact with the second surface of the interposer, wherein a footprint of the interposer is substantially matched to a footprint of the semiconductor die.
10. The assembly of claim 9 , wherein the substantially matched footprint enables drop-in replacement of flip chips in existing designs.
11. An assembly configured to improve performance of a flip chip device, the assembly comprising: a semiconductor die having an active surface and a back surface, the active surface comprising a plurality of conductive pads; an interposer substrate having a first surface in electrical contact with the active surface of the semiconductor die and a second surface; a space between the active surface of the semiconductor die and the first surface of the interposer substrate, wherein the space is substantially free of underfill material; and a carrier substrate having a top surface in electrical contact with the second surface of the interposer, wherein a radio frequency integrated circuit comprises the semiconductor die.
12. The assembly of claim 11 , wherein the radio frequency integrated circuit comprises a monolithic microwave integrated circuit.
13. The assembly of claim 1 , wherein the space contains air.
14. The assembly of claim 1 , wherein a footprint of the interposer is substantially matched to a footprint of the semiconductor die.
15. The assembly of claim 1 , wherein a radio frequency integrated circuit comprises the semiconductor die.
16. The assembly of claim 3 , wherein the space consists essentially of air.
17. The assembly of claim 3 , further comprising an underfill layer between the top surface of the carrier substrate and the second surface of the interposer substrate, wherein the underfill layer comprises a non-conductive adhesive material.
18. The assembly of claim 3 , further comprising at least one circuit component mounted to the interposer substrate and electrically coupled to the semiconductor die.
19. The assembly of claim 18 , wherein the at least one circuit component comprises a passive component.
20. The assembly of claim 3 , wherein a footprint of the interposer is substantially matched to a footprint of the semiconductor die.
21. The assembly of claim 9 , wherein the space consists essentially of air.
22. The assembly of claim 9 , further comprising an underfill layer between the top surface of the carrier substrate and the second surface of the interposer substrate, wherein the underfill layer comprises a non-conductive adhesive material.
23. The assembly of claim 9 , further comprising at least one circuit component mounted to the interposer substrate and electrically coupled to the semiconductor die.
24. The assembly of claim 23 , wherein the at least one circuit component comprises a passive component.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 11, 2009
October 18, 2011
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