Method of producing a semiconductor device, and wafer-processing tape

1. A wafer-processing tape, comprising a removable adhesive layer, and an adhesive layer, formed on a substrate film, wherein said tape is used in a process involving the steps of: grinding a hack face of a wafer circuit substrate having convex-type metal electrodes, and dicing the wafer circuit substrate into chips, in a state that said tape is adhered to the wafer circuit substrate; and picking up the chips, in which the chips are picked up in a state that the adhesive layer is peeled from the substrate film but is bonded to the individual chip, wherein the removable adhesive layer is radiation-curable, contains an acryl type copolymer as its principal component and has a gel fraction of 60% or more before being cured by radiation, and wherein the adhesive layer contains at least one resin selected from the group consisting of an acrylic resin, an epoxy resin and a polyimide resin, and has a storage elastic modulus at 80° C. of 0.05 MPa or less.

2. The wafer-processing tape according to claim 1 , wherein in the picking up step, the chip is peeled from the removable adhesive layer, in a state that the removable adhesive layer is bonded with the substrate film and only the adhesive layer is bonded with the chip.

3. The wafer-processing tape according to claim 1 , wherein the adhesive layer is heat-curable.

4. The wafer-processing tape according to claim 1 , wherein the adhesive layer has a storage elastic modulus at 25° C.′ of 1 MPa or more.

5. The wafer-processing tape according to claim 1 , wherein the acryl type copolymer comprises, as its principal component, an acryl type copolymer having at least a radiation-curable carbon-carbon double bond-containing group, and a group containing a hydroxyl group and a carboxyl group on a primary chain.

6. A method of producing a semiconductor device by using the wafer-processing tape according to claim 1 , comprising the steps of: adhering said tape to a wafer circuit substrate having convex-type metal electrodes; grinding a hack face of the wafer circuit substrate; dicing the wafer circuit substrate into chips; picking up the chips; and flip-chip-bonding the picked-up chips onto a substrate.

7. The method of producing a semiconductor device according to claim 6 , further comprising: adhering a dicing removable adhesive tape, to the wafer-processing tape adhered to the wafer circuit substrate having convex-type metal electrodes, after the grinding step and before the dicing step.

8. The method of producing a semiconductor device according to claim 6 , further comprising: adhering a dicing removable adhesive tape, to a hack face of the wafer circuit substrate having convex-type metal electrodes to which the wafer-processing tape is adhered, after the grinding step and before the dicing step.

9. The wafer-processing tape according to claim 5 , wherein the acryl type copolymer is a reaction product of a compound (A) comprising a photopolymerizable carbon-carbon double bond and a functional group, with a compound (B) having a functional group capable of causing a reaction with the functional group in compound (A).

10. A wafer-processing tape, comprising a removable adhesive layer, and an adhesive layer, formed on a substrate film, wherein the removable adhesive layer contains an acryl type copolymer as its principal component and has a gel fraction of 60% or more, and wherein the adhesive layer contains at least one resin selected from the group consisting of an acrylic resin, an epoxy resin and a polyimide resin, and has a storage elastic modulus at 80° C. of 0.05 MPa or less.