A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including Bex1Mgx2Znx3Te (0<x1<1, 0≦x2<1, 0<x3<1, x1+x2+x3=1) and a second semiconductor layer mainly including Bex4Mgx5Znx6Te (0<x4<1, 0<x5<1, 0≦x6<1, x4+x5+x6=1).
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device comprising: an InP substrate; a cladding layer carried on the substrate; and an active region layer between the cladding layer and the substrate; wherein, the cladding layer is a p-type semiconductor layer, the p-type semiconductor layer has a laminate structure of alternate layers of a first semiconductor layer mainly including Be x1 Mg x2 Zn x3 Te (0<x1<1, 0≦x2<1, 0<x3<1, x1+x2+x3=1) and a second semiconductor layer mainly including Be x4 Mg x5 Zn x6 Te (0<x4<1, 0<x5<1, 0≦x6<1, x4+x5+x6=1), and the second semiconductor layer is lattice-matched to the InP substrate.
2. The semiconductor device according to claim 1 , wherein the p-type semiconductor layer has a superlattice structure.
3. The semiconductor device according to claim 1 , wherein the p-type semiconductor layer includes at least one selected from the group consisting of N, P, O, As, Sb, Li, Na and K as a dopant.
4. The semiconductor device according to claim 1 , wherein both the first semiconductor layer and the second semiconductor layer are lattice-matched to the InP substrate.
5. The semiconductor device according to claim 4 , wherein the first semiconductor layer mainly includes Be 0.48 Zn 0.52 Te, and the second semiconductor layer mainly includes Be 0.36 Mg 0.64 Te.
6. The semiconductor device according to claim 1 , wherein the carrier activation ratios of the first semiconductor layer and the second semiconductor layer are 1% or over.
7. The semiconductor device according to claim 1 , further comprising an n-type semiconductor layer and an undoped semiconductor layer, in this order from the InP substrate, between the InP substrate and the p-type semiconductor layer.
8. The semiconductor device according to claim 7 , wherein the n-type semiconductor layer and the undoped semiconductor layer each are lattice-matched to the InP substrate.
9. The semiconductor device according to claim 7 , wherein the energy gap of the p-type semiconductor layer is larger than the energy gap of the undoped semiconductor layer.
10. The semiconductor device according to claim 9 , wherein the energy gap of the p-type semiconductor layer is larger than 2.1 eV.
11. The semiconductor device according to claim 7 , wherein the undoped semiconductor layer mainly includes ZnCdSe.
12. The semiconductor device according to claim 9 , wherein the energy gap of the p-type semiconductor layer is larger than 3.12 eV.
13. The semiconductor device according to claim 12 , wherein the undoped semiconductor layer mainly includes BeZnSeTe.
14. The semiconductor device according to claim 7 , wherein the top of a sublevel in the valence band of the p-type semiconductor layer is lower than the top of the valence band of the undoped semiconductor layer or the top of a sublevel in the valence band of the undoped semiconductor layer.
15. The semiconductor device according to claim 7 , wherein the n-type semiconductor layer is made of a Group II-VI compound semiconductor including Se.
16. The semiconductor device according to claim 7 , wherein another cladding layer comprises the n-type semiconductor layer.
17. The semiconductor device according to claim 1 , further comprising: a guide layer between the active layer and the cladding layer, the guide layer having a larger energy gap than the active layer and a smaller energy gap than the cladding layer.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
June 3, 2008
November 1, 2011
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