The present invention provides a method for manufacturing massively and efficiently a minute device which can receive or send data in contact, preferably, out of contact by forming an integrated circuit which is formed by a thin film over a large glass substrate and by peeling the integrated circuit from the substrate. Especially, an integrated circuit which is formed by a thin film is extremely thin, and so there is a threat that the integrated circuit is flied when transporting, and so handling thereof is difficult. In accordance with the present invention, a separating layer (also referred to as a peeling layer) is damaged at a plurality of times by at least two different kinds of methods (a damage due to laser light irradiation, a damage due to etching, or a damage due to a physical means), subsequently, the layer to be peeled can be efficiently peeled from a substrate. Further, handling of individual devices becomes easy by arching the peeled device.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing a semiconductor device comprising the steps of: forming a separating layer over a first substrate; forming a layer to be peeled including a semiconductor element over the separating layer; forming a space within a part of the separating layer by emitting light to a part of the separating layer; separating the layer to be peeled from the first substrate by removing the separating layer by introducing a gas or a liquid into the space which dissolves the separating layer from the space; and fixing the layer to be peeled to an adhesion surface of a second substrate.
2. A method for manufacturing a semiconductor device comprising the steps of: forming a separating layer over a first substrate; forming a layer to be peeled including a semiconductor element over the separating layer; performing ablation in a part of the separating layer by emitting light to the part of the separating layer; separating the layer to be peeled from the first substrate by removing the separating layer by introducing a gas or a liquid which dissolves the separating layer from the part of the separating layer which is ablated; and fixing the layer to be peeled to an adhesion surface of a second substrate.
3. A method for manufacturing a semiconductor device comprising the steps of: forming a separating layer over a first substrate; forming a layer to be peeled including a semiconductor element over the separating layer; forming a space within a part of the separating layer by emitting light to a periphery of the semiconductor element; introducing a gas or a liquid into the space which dissolves the separating layer from the space; peeling the layer to be peeled from the first substrate which are fixed to each other by a part of the separating layer overlapped with the semiconductor element; and fixing the layer to be peeled to an adhesion surface of a second substrate.
4. A method for manufacturing a semiconductor device comprising the steps of: forming a separating layer over a first substrate; forming a layer to be peeled including a semiconductor element over the separating layer; forming a space at an interface between the separating layer and the layer to be peeled by emitting light to a part of the separating layer; separating the layer to be peeled from the first substrate by removing the separating layer by introducing a gas or a liquid into the space which dissolves the separating layer from the space; and fixing the layer to be peeled to an adhesion surface of a second substrate.
5. A method for manufacturing a semiconductor device comprising the steps of: forming a separating layer over a first substrate; forming a layer to be peeled including a semiconductor element over the separating layer; forming a space at an interface between the separating layer and the layer to be peeled by emitting light to a periphery of the semiconductor element; introducing a gas or a liquid into the space which dissolves the separating layer from the space; peeling the layer to be peeled from the first substrate which are fixed to each other by a part of the separating layer overlapped with the semiconductor element; and fixing the layer to be peeled to an adhesion surface of a second substrate.
6. The method for manufacturing a semiconductor device according to claim 3 or 5 , wherein the separating layer is formed by a film containing WO X over W, a film containing MoO X over Mo, a film containing NbO X over Nb, or a film containing TiO X over Ti.
7. The method for manufacturing a semiconductor device according to claim 3 or 5 , wherein the separating layer is a semiconductor layer having an amorphous structure, ceramics, a metal material composed of tungsten, molybdenum, niobium, or titanium, or an organic polymer material.
8. The method for manufacturing a semiconductor device according to claim 6 , wherein the light is a laser light which uses any one of YAG laser, YVO 4 laser, GdVO 4 laser, YLF laser, or Ar laser and the light makes the separating layer generate gas when the light is emitted to the separating layer.
9. The method for manufacturing a semiconductor device according to claim 6 , wherein the light is a laser light which uses any one of YAG laser, YVO 4 laser, GdVO 4 laser, YLF laser, or Ar laser and the light makes bonding force between atoms or molecules of a substance for constructing the separating layer vanish or decrease when the light is emitted to the separating layer.
10. The method for manufacturing a semiconductor device according to claim 6 , wherein the light is a laser light at a wavelength of from 100 to 350 nm.
11. The method for manufacturing a semiconductor device according to claim 6 , wherein the light is a laser light at a wavelength of from 350 to 1200 nm.
12. The method for manufacturing a semiconductor device according to claim 6 , wherein the gas or the liquid which dissolves the separating layer is gas or liquid containing fluorine halide.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 20, 2005
November 15, 2011
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