The present invention provides a transparent conductive film having: a transparent base film; a transparent SiOx thin film having a thickness of from 10 to 100 nm, a refractive index of from 1.40 to 1.80 and an average surface roughness Ra of from 0.8 to 3.0 nm, wherein x is from 1.0 to 2.0; and a transparent conductive thin film including an indium-tin complex oxide, which has a thickness of from 20 to 35 nm and a ratio of SnO2/(In2O3+SnO2) of from 3 to 15 wt %, wherein the transparent conductive thin film is disposed on one side of the transparent base film through the transparent SiOx thin film.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for producing a transparent conductive film, which comprises: forming a transparent SiO x thin film on a surface of a transparent base film by a dry thin film forming method; and forming a transparent conductive thin film comprising an indium-tin complex oxide in direct contact with the transparent SiO x thin film, forming a hard coat treated layer in direct contact with a transparent substrate, forming a transparent adhesive layer in direct contact with said transparent substrate and with said transparent base film, wherein the transparent SiO x thin film has a thickness of from 10 to 100 nm, a refractive index of from 1.40 to 1.80 and an average surface roughness Ra of from 0.8 to 3.0 nm, wherein x is from 1.0 to 2.0, wherein the transparent conductive thin film has a thickness of from 20 to 35 nm and a ratio of SnO 2 /(In 2 O 3 +SnO 2 ) of from 3 to 15 wt %.
2. The method according to claim 1 , wherein the SiO x layer is in direct contact with the transparent base film.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
January 25, 2008
December 13, 2011
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