A method for fabricating a contact of a semiconductor device includes the steps of forming a dielectric layer having a contact hole on a semiconductor substrate, forming an out-gassing barrier layer comprising a poly-silicon layer to cover at least inner walls of the contact hole in order to prevent undesired out-gassing from the dielectric layer, and depositing an aluminum layer on the out-gassing barrier layer. The contact structure of the semiconductor device includes the aluminum layer filled in the contact layer formed on the semiconductor substrate, and the out-gassing barrier layer formed under the aluminum layer to prevent out-gassing from the dielectric layer. A fine contact can be formed along with the aluminum layer, thereby realizing the contact structure of a lower contact resistance. As a result, it is possible to realize stabilization of an overall contact resistance of the semiconductor device.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A contact structure of a semiconductor device, the structure comprising: an aluminum layer filled in a contact hole formed in a dielectric layer on a semiconductor substrate; an out-gassing barrier layer formed under the aluminum layer to prevent out-gassing from the dielectric layer, the out-gassing barrier layer comprising a conductive poly-silicon layer; and, a metal wetting layer at an interface between the conductive poly-silicon layer and the aluminum layer.
2. A contact structure of a semiconductor device, the structure comprising: an aluminum layer filled in a contact hole formed in a dielectric layer on a semiconductor substrate; and an out-gassing barrier layer formed under the aluminum layer to prevent out-gassing from the dielectric layer, the out-gassing barrier layer comprising a metal silicide layer.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
May 10, 2010
December 27, 2011
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