A structure of a plurality of thin film transistors wherein a peripheral circuit on a glass substrate of a liquid crystal display panel; and each of polycrystalline silicon thin film 13 of the thin film transistor is formed on the glass substrate; and each of gate electrode 15 is formed on a gate insulation layer, and each of the gate electrode 15 is overhead corresponding to the polycrystalline silicon thin film 13 for a channel; wherein the gate electrode 15 is comprised a pair of projection part 15A and a gate-channel 15B; and wherein the pair of projection part 15A is formed the both sides of the gate-channel 15B in which the side is for along the channel-direction, and wherein the pair of projection part 15A is enlarged for across the channel-direction.
Legal claims defining the scope of protection, as filed with the USPTO.
Claim text for this patent isn't available yet.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
August 25, 2009
December 27, 2011
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.