An apparatus for heat treating a substrate includes a substrate holder unit including a substrate stage on which a substrate is to be placed and which is made of one of a carbon and a carbon covered material, and a heating unit which is provided above the substrate stage and includes a heat dissipation surface opposing the substrate stage, and heats the substrate placed on the substrate stage in noncontact therewith radiation heat from the heat dissipation surface. In addition, a chamber contains the substrate holder unit and the heating unit, and an elevating device vertically moves at least one of the substrate holder unit and the heating unit in the chamber to bring the substrate stage and the heat dissipation surface of the heating unit close to each other or apart from each other. The substrate holder unit includes a radiation plate which is arranged under the substrate stage at a gap therefrom, and a reflection plate which is arranged under the radiation plate at a gap therefrom.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An apparatus for heat treating a substrate, said apparatus comprising: a substrate holder unit including a substrate stage on which a substrate is to be placed and which is made of one of a carbon and a carbon covered material, a heating unit which is provided above said substrate stage, includes a heat dissipation surface opposing said substrate stage, and heats the substrate placed on said substrate stage in noncontact therewith radiation heat from said heat dissipation surface, a chamber in which said substrate holder unit and said heating unit are arranged, and an elevating device which vertically moves at least one of said substrate holder unit and said heating unit in said chamber to bring said substrate stage and said heat dissipation surface of said heating unit close to each other or apart from each other, wherein said substrate holder unit further comprises a radiation plate which is arranged under said substrate stage at a gap therefrom, catches heat emitted from a lower surface of said substrate stage, and radiates the caught heat toward said substrate stage, and a reflection plate which is arranged under said radiation plate at a gap therefrom and reflects heat emitted from said radiation plate, and wherein when said substrate holder unit is moved by said elevating device, the gap between said radiation plate and said reflection plate is unchanged.
2. The apparatus for heat treating the substrate according to claim 1 , wherein said radiation plate is made of one of carbon and a carbon covered material.
3. The apparatus for heat treating the substrate according to claim 1 or 2 , wherein said radiation plate comprises a plurality of radiation plates, and said reflection plate is arranged at a gap from a lowermost one of said plurality of radiation plates.
4. The apparatus for heat treating the substrate according to claim 1 , wherein said reflection plate is made of a refractory metal.
5. The apparatus for heat treating the substrate according to claim 1 , further comprising a cooling panel which is arranged under said reflection plate at a gap therefrom and cools at least one of said reflection plate, said radiation plate, and said substrate stage, wherein said reflection plate comprises a plurality of reflection plates, and said cooling panel is arranged at a gap from a lowermost one of said reflection plates.
6. The apparatus for heat treating the substrate according to claim 5 , further comprising a skirt which extends from a periphery of said reflection plate to surround said cooling panel in order to suppress heat absorption from a circumferential side surface of said cooling plate, wherein when said reflection plate comprises the plurality of reflection plates, said skirt extends from a periphery of a lowermost one of said plurality of reflection plates to surround said cooling panel.
7. The apparatus for heat treating the substrate according to claim 5 , wherein said chamber comprises a first room and a second room arranged above said first room and communicating with said first room, said heating unit is arranged in said second room of said chamber such that said heat dissipation surface faces downward, said substrate holder unit is vertically movable between said first room and said second room upon operation of said elevating device, and when said substrate holder unit moves upward to said second room, said substrate stage and said heat dissipation surface of said heating unit come close to each other, and said cooling panel blocks communication between said first room and said second room.
8. The apparatus for heat treating the substrate according to claim 7 , further comprising a shutter device which is capable of advancing a shutter to a portion between said substrate stage and said heat dissipation surface and retreating said shutter from between said substrate stage and said heat dissipation surface when said substrate holder unit moves downward to said first room to separate said substrate stage of said substrate holder unit from said heat dissipation surface of said heating unit.
9. The apparatus for heat treating the substrate according to claim 8 , wherein when said shutter advances to said portion between said substrate stage and said heat dissipation surface, a surface of said shutter which opposes said heat dissipation surface and a second surface of said shutter which opposes said substrate stage form a reflection surface and a heat absorption surface, respectively.
10. The apparatus for heat treating the substrate according to claim 8 , wherein said shutter device includes cooling means for said shutter for allowing to cool said substrate stage and the substrate placed on said substrate stage when said shutter advances to said portion between said substrate stage and said heat dissipation surface.
11. The apparatus for heat treating the substrate according to claim 7 , further comprising a plurality of pins to support said substrate stand vertically in said first room of said chamber, wherein said substrate holder unit has a plurality of through holes through which said plurality of pins are capable of extending vertically, and while said substrate holder unit moves downward from said second room to said first room, said plurality of pins project from aid substrate stage through the through holes and support the substrate placed on said substrate stage.
12. The apparatus for heat treating the substrate according to claim 1 , wherein said substrate stage has a substrate placing portion to place the substrate thereon, and said substrate stage has a thickness larger than that of said substrate placing portion.
13. The apparatus for heat treating the substrate according to claim 12 , wherein said substrate stage includes an annular wall which is formed on a peripheral portion of said substrate placing portion and surrounds said heat dissipation surface of said heating unit, when said substrate stage and said heat dissipation surface of said heating unit are close to each other, to suppress radiation heat from said heat dissipation surface from being released outside.
14. A method for heat treating a substrate using an apparatus for heat treating a substrate, said apparatus having: a substrate holder unit including a substrate stage on which a substrate is to be placed, and a heating unit which is provided above the substrate stage, includes a heat dissipation surface opposing the substrate stage, and heats the substrate placed on the substrate stage in noncontact therewith radiation heat from the heat dissipation surface, the method comprising: a placing step of placing a substrate, having an implantation region in a surface thereof, on the substrate stage such that a surface thereof which is on an implantation region side faces a heat dissipation surface side of the heating unit, and a heat treating step of heat treating the substrate using an apparatus for heat treating a substrate according to claim 1 .
15. A method for heat-treating a substrate using an apparatus for heat-treating a substrate, said apparatus having: a substrate holder unit including a substrate stage on which a substrate is to be placed, and a heating unit which is provided above the substrate stage, includes a heat dissipation surface opposing the substrate stage, and heats the substrate placed on the substrate stage in noncontact therewith radiation heat from the heat dissipation surface, the method comprising: a placing step of placing a substrate, having an implantation region in a surface thereof, on the substrate stage such that a surface thereof which is on an implantation region side faces a heat dissipation surface side of the heating unit, and a heat-treating step of heat-treating the substrate using an apparatus for heat-treating a substrate according to claim 5 , wherein the heat-treating step has a cooling step of cooling the substrate stage by a cooling panel when the substrate is heated.
16. An apparatus for heat treating a substrate, said apparatus comprising: a substrate holder unit including a substrate stage on which a substrate is to be placed and which is made of one of a carbon and a carbon covered material, a heating unit which is provided above said substrate stage, includes a heat dissipation surface opposing said substrate stage, and heats the substrate placed on said substrate stage in noncontact therewith radiation heat from said heat dissipation surface, a chamber in which said substrate holder unit and said heating unit are arranged, and an elevating device which vertically moves said substrate holder unit in said chamber to move said substrate stage and said heat dissipation surface relative to each other, wherein said substrate holder unit further comprises a radiation plate which is arranged under said substrate stage at a gap therefrom, catches heat emitted from a lower surface of said substrate stage, and radiates the caught heat toward said substrate stage, and a reflection plate which is arranged under said radiation plate at a gap therefrom and reflects heat emitted from said radiation plate, and wherein when said substrate holder unit is moved by said elevating device, the gap between said radiation plate and said reflection plate is unchanged.
17. The apparatus for heat treating the substrate according to claim 16 , wherein said radiation plate comprises a plurality of radiation plates, and said reflection plate is arranged at a gap from a lowermost one of said plurality of radiation plates.
18. The apparatus for heat treating the substrate according to claim 16 , further comprising a cooling panel which is arranged under said reflection plate at a gap therefrom and cools at least one of said reflection plate, said radiation plate, and said substrate stage, wherein said reflection plate comprises a plurality of reflection plates, and said cooling panel is arranged at a gap from a lowermost one of said reflection plates.
19. The apparatus for heat treating the substrate according to claim 16 , further comprising a skirt which extends from a periphery of said reflection plate to surround said cooling panel in order to suppress heat absorption from a circumferential side surface of said cooling plate, wherein when said reflection plate comprises the plurality of reflection plates, said skirt extends from a periphery of a lowermost one of said plurality of reflection plates to surround said cooling panel.
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April 3, 2009
January 3, 2012
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