Display device

1. A display device comprising: an insulating substrate; a drive circuit on the insulating substrate, the drive circuit including an inverter circuit, the inverter circuit having: first to fifth transistors of an identical conductivity type, each of the transistors including a semiconductor layer made of polycrystalline silicon; and a high-resistance element, wherein a first terminal of the first transistor is coupled to a first node, a gate terminal thereof is coupled to a second node, and a second terminal thereof is coupled to a third node, a first terminal of the second transistor is coupled to a fifth node, a gate terminal thereof is coupled to the third node, and a second terminal thereof is coupled to a sixth node, a first terminal of the third transistor is coupled to the first node, a gate terminal thereof is coupled to the second node, and a second terminal thereof is coupled to the fifth node, a first terminal of the fourth transistor is coupled to a seventh node, a gate terminal thereof is coupled to the fifth node, and a second terminal thereof is coupled to an eighth node, a first terminal of the fifth transistor is coupled to the first node, a gate terminal thereof is coupled to the second node, and a second terminal thereof is coupled to the seventh node, a first terminal of the high-resistance element is coupled to a fourth node and a second terminal thereof is coupled to the third node, a first power supply voltage is provided between the fourth node and first node, a second power supply voltage is provided between the sixth node and first node, a third power supply voltage is provided between the eighth node and first node, an input clock is inputted into the second node and an output clock obtained by inverting the input clock is outputted from the seventh node, the first power supply voltage is larger than a sum of the third power supply voltage and twice a threshold voltage of the transistors, and the second power supply voltage is larger than a sum of the third power supply voltage and the threshold voltage of the transistors.

2. A display device comprising an insulating substrate; a drive circuit on the insulating substrate, the drive circuit including an inverter circuit, the inverter circuit having: first to sixth transistors of an identical conductivity type, each of the transistors including a semiconductor layer made of polycrystalline silicon; a high-resistance element; and first and second capacitance elements, wherein a first terminal of the first transistor is coupled to a first node, a gate terminal thereof is coupled to a second node, and a second terminal thereof is coupled to a third node, a first terminal of the second transistor is coupled to a fifth node, a gate terminal thereof is coupled to the third node, and a second terminal thereof is coupled to a sixth node, a first terminal of the third transistor is coupled to the first node, a gate terminal thereof is coupled to the second node, and a second terminal thereof is coupled to the fifth node, a first terminal of the fourth transistor is coupled to a seventh node, a gate terminal thereof is coupled to the fifth node, and a second terminal thereof is coupled to an eighth node, a first terminal of the fifth transistor is coupled to the first node, a gate terminal thereof is coupled to the second node, and a second terminal thereof is coupled to the seventh node, a first terminal of the high-resistance element is coupled to a fourth node and a second terminal thereof is coupled to the third node, a first terminal of the first capacitance element is coupled to the seventh node and a second terminal thereof is coupled to the fifth node, a first terminal of the second capacitance element is coupled to a ninth node and a second terminal thereof is coupled to the second node, a first terminal of the sixth transistor is coupled to the first node, a gate terminal thereof is coupled to the third node, fifth node, or seventh node, and a second terminal thereof is coupled to the second node, a first power supply voltage is provided to the fourth node, a second power supply voltage is provided to the sixth node, a third power supply voltage is provided to the eighth node, a fourth power supply voltage is provided to the first node, and an input clock is inputted into the ninth node and an output clock obtained by inverting the input clock is outputted from the seventh node.

3. The display device according to claim 2 , wherein a difference between the third power supply voltage and fourth power supply voltage is larger than an amplitude of the input clock.

4. The display device according to any one of claims 2 and 3 , wherein the first power supply voltage, second power supply voltage, and third power supply voltage are equal to one another.

5. A display device comprising: an insulating substrate; a drive circuit on the insulating substrate, the drive circuit including an inverter circuit, the inverter circuit having: first to fifth transistors of an identical conductivity type, each of the transistors including a semiconductor layer made of polycrystalline silicon; and a high-resistance element, wherein a first terminal of the first transistor is coupled to a first node, a gate terminal thereof is coupled to a second node, and a second terminal thereof is coupled to a third node, a first terminal of the second transistor is coupled to a fifth node, a gate terminal thereof is coupled to the third node, and a second terminal thereof is coupled to a sixth node, a first terminal of the third transistor is coupled to the first node, a gate terminal thereof is coupled to the second node, and a second terminal thereof is coupled to the fifth node, a first terminal of the fourth transistor is coupled to a seventh node, a gate terminal thereof is coupled to the fifth node, and a second terminal thereof is coupled to an eighth node, a first terminal of the fifth transistor is coupled to the first node, a gate terminal thereof is coupled to the second node, and a second terminal thereof is coupled to the seventh node, a first terminal of the high-resistance element is coupled to a fourth node and a second terminal thereof is coupled to the third node, a first power supply voltage is provided between the fourth node and first node, a second power supply voltage is provided between the sixth node and first node, a third power supply voltage is provided between the eighth node and first node, an input clock is inputted into the second node and an output clock obtained by inverting the input clock is outputted from the seventh node, and the gate terminal of the second transistor is coupled to the third node without being coupled to the gate terminal of the fourth transistor, and gate terminal of the fourth transistor is coupled to the fifth node without being coupled to the gate terminal of the second transistor.

6. A display device comprising an insulating substrate; a drive circuit on the insulating substrate, the drive circuit including an inverter circuit, the inverter circuit having: first to fifth transistors of an identical conductivity type, each of the transistors including a semiconductor layer made of polycrystalline silicon; and a high-resistance element, wherein a first terminal of the first transistor is coupled to a first node, a gate terminal thereof is coupled to a second node, and a second terminal thereof is coupled to a third node, a first terminal of the second transistor is coupled to a fifth node, a gate terminal thereof is coupled to the third node, and a second terminal thereof is coupled to a sixth node, a first terminal of the third transistor is coupled to the first node, a gate terminal thereof is coupled to the second node, and a second terminal thereof is coupled to the fifth node, a first terminal of the fourth transistor is coupled to a seventh node, a gate terminal thereof is coupled to the fifth node, and a second terminal thereof is coupled to an eighth node, a first terminal of the fifth transistor is coupled to the first node, a gate terminal thereof is coupled to the second node, and a second terminal thereof is coupled to the seventh node, a first terminal of the high-resistance element is coupled to a fourth node and a second terminal thereof is coupled to the third node, a first power supply voltage is provided between the fourth node and first node, a second power supply voltage is provided between the sixth node and first node, a third power supply voltage is provided between the eighth node and first node, an input clock is inputted into the second node and an output clock obtained by inverting the input clock is outputted from the seventh node, and the gate terminal of the second transistor is only coupled to the third node, and the gate terminal of the fourth transistor is only coupled to the fifth node.

7. A display device comprising an insulating substrate; a drive circuit on the insulating substrate, the drive circuit including an inverter circuit, the inverter circuit having: first to fifth transistors of an identical conductivity type, each of the transistors including a semiconductor layer made of polycrystalline silicon: a high-resistance element; and a capacitance element, wherein a first terminal of the first transistor is coupled to a first node, a gate terminal thereof is coupled to a second node, and a second terminal thereof is coupled to a third node, a first terminal of the second transistor is coupled to a fifth node, a gate terminal thereof is coupled to the third node, and a second terminal thereof is coupled to a sixth node, a first terminal of the third transistor is coupled to the first node, a gate terminal thereof is coupled to the second node, and a second terminal thereof is coupled to the fifth node, a first terminal of the fourth transistor is coupled to a seventh node, a gate terminal thereof is coupled to the fifth node, and a second terminal thereof is coupled to an eighth node, a first terminal of the fifth transistor is coupled to the first node, a gate terminal thereof is coupled to the second node, and a second terminal thereof is coupled to the seventh node, a first terminal of the high-resistance element is coupled to a fourth node and a second terminal thereof is coupled to the third node, a first terminal of the capacitance element is coupled to the seventh node and a second terminal thereof is coupled to the fifth node, a first power supply voltage is provided between the fourth node and first node, a second power supply voltage is provided between the sixth node and first node, a third power supply voltage is provided between the eighth node and first node, an input clock is inputted into the second node and an output clock obtained by inverting the input clock is outputted from the seventh node, and the gate terminal of the second transistor is coupled to the third node without being coupled to the gate terminal of the fourth transistor, and gate terminal of the fourth transistor is coupled to the fifth node without being coupled to the gate terminal of the second transistor.

8. A display device comprising an insulating substrate; a drive circuit on the insulating substrate, the drive circuit including an inverter circuit, the inverter circuit having: first to fifth transistors of an identical conductivity type, each of the transistors including a semiconductor layer made of polycrystalline silicon: a high-resistance element; and a capacitance element, wherein a first terminal of the first transistor is coupled to a first node, a gate terminal thereof is coupled to a second node, and a second terminal thereof is coupled to a third node, a first terminal of the second transistor is coupled to a fifth node, a gate terminal thereof is coupled to the third node, and a second terminal thereof is coupled to a sixth node, a first terminal of the third transistor is coupled to the first node, a gate terminal thereof is coupled to the second node, and a second terminal thereof is coupled to the fifth node, a first terminal of the fourth transistor is coupled to a seventh node, a gate terminal thereof is coupled to the fifth node, and a second terminal thereof is coupled to an eighth node, a first terminal of the fifth transistor is coupled to the first node, a gate terminal thereof is coupled to the second node, and a second terminal thereof is coupled to the seventh node, a first terminal of the high-resistance element is coupled to a fourth node and a second terminal thereof is coupled to the third node, a first terminal of the capacitance element is coupled to the seventh node and a second terminal thereof is coupled to the fifth node, a first power supply voltage is provided between the fourth node and first node, a second power supply voltage is provided between the sixth node and first node, a third power supply voltage is provided between the eighth node and first node, an input clock is inputted into the second node and an output clock obtained by inverting the input clock is outputted from the seventh node, and the gate terminal of the second transistor is only coupled to the third node, and the gate terminal of the fourth transistor is only coupled to the fifth node.