A semiconductor device includes a semiconductor substrate, an insulated gate transistor formed to the semiconductor substrate, a diode formed to the semiconductor substrate, and a control transistor formed to the semiconductor substrate. A first current terminal of the insulated gate transistor is coupled to a cathode of the diode at a high potential side. A second current terminal of the insulated gate transistor is coupled to an anode of the diode at a low potential side. The control transistor is configured to turn off the insulated gate transistor by reducing a potential of a gate terminal of the insulated gate transistor when the diode conducts an electric current.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device comprising: a semiconductor substrate; an insulated gate transistor formed to the semiconductor substrate; a diode formed to the semiconductor substrate; a first control transistor formed to the semiconductor substrate; and a first sensing resistor formed to the semiconductor substrate, wherein a first current terminal of the insulated gate transistor is coupled to a cathode of the diode at a high potential side, wherein a second current terminal of the insulated gate transistor is coupled to an anode of the diode at a low potential side, wherein the first control transistor is configured to turn off the insulated gate transistor by reducing a potential of a gate terminal of the insulated gate transistor when the diode conducts a first electric current, wherein the diode has a sensing anode terminal for outputting a second electric current proportional to the first electric current, wherein the first sensing resistor is coupled between the anode and the sensing anode terminal of the diode, wherein a control terminal of the first control transistor is coupled to the anode of the diode, wherein the first current terminal of the first control transistor is coupled to the gate terminal of the insulated gate transistor, and wherein the second current terminal of the first control transistor is coupled to the sensing anode terminal of the diode.
2. The semiconductor device according to claim 1 , further comprising: a second control transistor formed to the semiconductor substrate; and a second sensing resistor formed to the semiconductor substrate, wherein the second control transistor is configured to turn off the insulated gate transistor by reducing the potential of the gate terminal of the insulated gate transistor when a third electric current flowing through the insulated gate transistor exceeds an allowable current value, wherein the insulated gate transistor has a sensing current terminal for outputting a fourth electric current proportional to the third electric current, wherein the second sensing resistor is coupled between the sensing current terminal of the insulated gate transistor and the second current terminal of the insulated gate transistor, wherein a control terminal of the second control transistor is coupled to the sensing current terminal of the insulated gate transistor, wherein a first current terminal of the second control transistor is coupled to the gate terminal of the insulated gate transistor, and wherein a second current terminal of the second control transistor is coupled to the second current terminal of the insulated gate transistor.
3. The semiconductor device according to claim 2 , wherein the second control transistor is a bipolar transistor or a metal-oxide-semiconductor transistor, wherein the control terminal of the second control transistor is a base terminal of the bipolar transistor or a gate terminal of the metal-oxide-semiconductor transistor, wherein the first current terminal of the second control transistor is a collector terminal of the bipolar transistor or a drain terminal of the metal-oxide-semiconductor transistor, and wherein the second current terminal of the second control transistor is an emitter terminal of the bipolar transistor or a source terminal of the metal-oxide-semiconductor transistor.
4. The semiconductor device according to claim 2 , wherein the second control transistor is located adjacent to the insulated gate transistor or the diode.
5. The semiconductor device according to claim 1 , wherein the insulated gate transistor is an insulated gate bipolar transistor or a vertical metal-oxide-semiconductor transistor, wherein the first current terminal of the insulated gate transistor is a collector terminal of the insulated gate bipolar transistor or a drain terminal of the vertical metal-oxide-semiconductor transistor, and wherein the second current terminal of the insulated gate transistor is an emitter terminal of the insulated gate bipolar transistor or a source terminal of the vertical metal-oxide-semiconductor transistor.
6. The semiconductor device according to claim 1 , wherein the first control transistor is a bipolar transistor or a metal-oxide-semiconductor, wherein the control terminal of the first control transistor is a base terminal of the bipolar transistor or a gate terminal of the metal-oxide-semiconductor transistor, wherein the first current terminal of the first control transistor is a collector terminal of the bipolar transistor or a drain terminal of the metal-oxide-semiconductor transistor, and wherein the second current terminal of the first control transistor is an emitter terminal of the bipolar transistor or a source terminal of the metal-oxide-semiconductor transistor.
7. The semiconductor device according to claim 1 , wherein the first control transistor is located adjacent to the insulated gate transistor or the diode.
8. The semiconductor device according to claim 1 , further comprising: an insulating trench formed to the semiconductor substrate, wherein the first control transistor is surrounded by the insulating trench.
9. The semiconductor device according to claim 1 , further comprising: an insulating trench formed to the semiconductor substrate; and a buried insulating layer formed to the semiconductor substrate, wherein the first control transistor is isolated by the insulating trench and the buried insulating layer.
10. The semiconductor device according to claim 1 , further comprising: a first highly-doped layer formed to the semiconductor substrate and located directly below the first control transistor, wherein the first highly-doped layer has the same conductivity type as the semiconductor substrate and has an impurity concentration greater than that of the semiconductor substrate.
11. The semiconductor device according to claim 1 , further comprising: a second highly-doped layer formed to the semiconductor substrate, wherein the second highly-doped layer has the same conductivity type as the semiconductor substrate and has an impurity concentration greater than that of the semiconductor substrate, wherein the insulated gate transistor has a trench gate structure, and wherein the second highly-doped layer is located between a channel layer and a drift layer of the insulated gate transistor.
12. The semiconductor device according to claim 1 , wherein the semiconductor device is mounted on a vehicle.
13. An inverter circuit comprising: a plurality of semiconductor devices, each of which is defined in claim 1 .
14. The inverter circuit according to claim 13 , wherein the plurality of semiconductor devices comprises six semiconductor devices and is configured to generate a three-phase alternating current output, and wherein the six semiconductor devices are integrated in a single semiconductor chip.
15. The inverter circuit according to claim 13 , wherein the plurality of semiconductor devices comprises six semiconductor devices and is configured to generate a three-phase alternating current output, wherein three of the six semiconductor devices are integrated in a first single semiconductor chip, and wherein another three of the six semiconductor devices are integrated in a second single semiconductor chip.
16. The inverter circuit according to claim 13 , wherein each of the insulated gate transistor and the diode of each of the plurality of semiconductor devices is a vertical element in which an electric current flows in a direction normal to a surface of the semiconductor substrate, and wherein the plurality of semiconductor devices is isolated from each other by an insulating trench that penetrates through the semiconductor substrate in the direction.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
November 6, 2008
February 28, 2012
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