A variable capacitor is formed from a pair of electrodes and a dielectric interposed between the electrodes over a substrate, and an external input is detected by changing capacitance of the variable capacitor by a physical or electrical force. Specifically, a variable capacitor and a sense amplifier are provided over the same substrate, and the sense amplifier reads the change of capacitance of the variable capacitor and transmits a signal in accordance with the input to a control circuit.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device comprising: an insulating substrate; a plurality of variable capacitors each including a pair of electrodes and a dielectric interposed therebetween, a read-out circuit that detects change of capacitance of each variable capacitor; and a display device, wherein the capacitance of the plurality of variable capacitors are changed by pushing one of the pair of electrodes, and wherein the plurality of variable capacitors, the read-out circuit, and the display device are provided over the insulating substrate.
2. The semiconductor device according to claim 1 , wherein the display device and the read-out circuit comprises a thin film transistor formed over the insulating substrate.
3. The semiconductor device according to claim 1 , wherein the dielectric is surrounded by the pair of electrodes and a sealant.
4. The semiconductor device according to claim 1 , wherein the dielectric is liquid crystal that is used in the display device.
5. The semiconductor device according to claim 1 , wherein the insulating substrate comprises glass.
6. The semiconductor device according to claim 1 , wherein the insulating substrate comprises plastic.
7. A semiconductor device comprising: an insulating substrate; a variable capacitor including a pair of electrodes and a dielectric, which is formed over the insulating substrate; and a display device over the insulating substrate, wherein a capacitance of the variable capacitor is changed by pushing one of the pair of electrodes, and wherein the semiconductor device includes a unit for converting change of the capacitance of the variable capacitor into an electrical signal.
8. The semiconductor device according to claim 1 , wherein the display device comprises a thin film transistor formed over the insulating substrate.
9. The semiconductor device according to claim 1 , wherein the dielectric is surrounded by the pair of electrodes and a sealant.
10. The semiconductor device according to claim 1 , wherein the dielectric is liquid crystal that is used in the display device.
11. The semiconductor device according to claim 1 , wherein the insulating substrate comprises glass.
12. The semiconductor device according to claim 1 , wherein the insulating substrate comprises plastic.
13. A semiconductor device comprising: an insulating substrate; a plurality of variable capacitors each including a pair of electrodes and a dielectric, which are formed over the insulating substrate; and a display device over the insulating substrate, wherein a capacitance of the plurality of variable capacitors are changed by pushing one of the pair of electrodes, and wherein the semiconductor device includes a unit for converting change of the capacitance of each variable capacitor into an electrical signal.
14. The semiconductor device according to claim 13 , wherein the display device comprises a thin film transistor formed over the insulating substrate.
15. The semiconductor device according to claim 13 , wherein the dielectric is surrounded by the pair of electrodes and a sealant.
16. The semiconductor device according to claim 13 , wherein the dielectric is liquid crystal that is used in the display device.
17. The semiconductor device according to claim 13 , wherein the insulating substrate comprises glass.
18. The semiconductor device according to claim 13 , wherein the insulating substrate comprises plastic.
19. A semiconductor device comprising: an insulating substrate; a variable capacitor including a pair of electrodes and a dielectric interposed therebetween; a read-out circuit that detects change of capacitance of the variable capacitor; and a display device, wherein the capacitance of the variable capacitor is changed by pushing one of the pair of electrodes, and wherein the variable capacitor, the read-out circuit, and the display device are provided over the insulating substrate.
20. The semiconductor device according to claim 19 , wherein the display device and the read-out circuit comprises a thin film transistor formed over the insulating substrate.
21. The semiconductor device according to claim 19 , wherein the dielectric is surrounded by the pair of electrodes and a sealant.
22. The semiconductor device according to claim 19 , wherein the dielectric is liquid crystal that is used in the display device.
23. The semiconductor device according to claim 19 , wherein the insulating substrate comprises glass.
24. The semiconductor device according to claim 19 , wherein the insulating substrate comprises plastic.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
April 21, 2009
March 6, 2012
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