An integrated circuit is adapted to be selectively AC or DC coupled to an external device at a coupling point. The integrated circuit includes a first connector connected to the coupling point by way of a coupling capacitor for AC coupling, a second connector connected to the coupling point for DC coupling, and a switch to selectively short the first and second connectors and thereby the coupling capacitor, when the integrated circuit is DC coupled to the device. The switch may be a MOSFET bridge comprising a switch control MOSFET interconnected between the first and second connectors, with the switch control MOSFET receiving at its gate a mode status signal for turning on the switch control MOSFET and thereby shorting the MOSFET bridge when the integrated circuit is DC coupled to the external device. The MOSFET bridge also includes a number of dynamically biased nMOSFETs connected in series with the switch control MOSFET in order to protect switch control MOSFET from high external supply voltages, and a number of dynamically biased pMOSFETs connected in parallel with the switch control MOSFET.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An integrated circuit (IC) chip adapted to be selectively AC or DC coupled to an external device, said IC chip comprising: a first connector on said IC chip for connection to a coupling point external to said IC chip by way of a coupling capacitor, external to said IC chip, to AC couple said IC chip to said external device; a second connector on said IC chip for connection to said coupling point, external to said IC chip, to DC couple said IC chip to said external device; switching logic, integrated on said IC chip to selectively interconnect said first connector and said second connector of said IC chip through said IC chip, thereby bypassing said coupling capacitor, when said IC chip is DC coupled to said device by way of said second connector.
2. The IC chip of claim 1 , wherein said switching logic comprises a MOSFET bridge.
3. The IC chip of claim 2 , wherein said MOSFET bridge comprises a switch control MOSFET interconnected between said first and second connectors, said switch control MOSFET receiving at its gate a mode status signal for turning on said switch control MOSFET and thereby shorting said MOSFET bridge when said circuit is DC coupled to said device.
4. The IC chip of claim 3 , wherein said MOSFET bridge further comprises a plurality of nMOSFETs connected in series with said switch control MOSFET, said plurality of nMOSFETs providing a plurality of step down voltages relative to an external supply voltage.
5. The IC chip of claim 4 , wherein the number of nMOSFETs in said MOSFET bridge is selected to tolerate a multiplication factor of an external supply voltage.
6. The IC chip of claim 4 , wherein said MOSFET bridge further comprises a dynamic bias circuit for providing voltages at the gates of said nMOSFETs.
7. The IC chip of claim 6 , wherein said MOSFET bridge further comprises a dynamic bias circuit for providing voltages at the gates of both said nMOSFETs and said pMOSFETs.
8. The IC chip of claim 4 , wherein said MOSFET bridge further comprises a plurality of pMOSFETs, connected in parallel with said switch control MOSFET and said plurality of nMOSFETs.
9. A method of selectively AC or DC coupling an integrated circuit (IC) chip to an external device at a coupling point external to said IC chip, said IC chip comprising a first connector connected to said coupling point by way of a coupling capacitor external to said IC chip for AC coupling and a second connector connected to said coupling point for DC coupling, said method comprising: closing switching logic formed within said IC chip, to selectively interconnect said first connector and said second connector through said IC chip, thereby bypassing said coupling capacitor, when said IC chip is DC coupled to said device.
10. The method of claim 9 , wherein said switch comprises a MOSFET bridge in said IC chip.
11. The method of claim 10 , wherein said MOSFET bridge comprises a switch control MOSFET interconnected between said first and second connectors, said method further comprising receiving at a gate of said switch control MOSFET, a mode status signal for turning on said switch control MOSFET and thereby selectively shorting said MOSFET bridge when said IC chip is DC coupled to said device.
12. The method of claim 11 , wherein said MOSFET bridge further comprises a plurality of nMOSFETs connected in series with said switch control MOSFET, said plurality of nMOSFETs providing a plurality of step down voltages relative to an external supply voltage.
13. The method of claim 11 , wherein said MOSFET bridge further comprises a dynamic bias circuit for providing voltages at the gates of said plurality of nMOSFETs.
14. The method of claim 12 , wherein said MOSFET bridge further comprises a plurality of pMOSFETs, connected in parallel with said switch control MOSFET and said plurality of nMOSFETs.
15. The method of claim 14 , wherein said MOSFET bridge further comprises a dynamic bias circuit for providing voltages at the gates of both said nMOSFETs and said pMOSFETs.
16. Computer readable medium storing code of a hardware description language for the formation of an IC chip as claimed in claim 1 .
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 18, 2009
May 29, 2012
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