Thermal mixing methods of forming a substantially relaxed and low-defect SGOI substrate material are provided. The methods include a patterning step which is used to form a structure containing at least SiGe islands formed atop a Ge resistant diffusion barrier layer. Patterning of the SiGe layer into islands changes the local forces acting at each of the island edges in such a way so that the relaxation force is greater than the forces that oppose relaxation. The absence of restoring forces at the edges of the patterned layers allows the final SiGe film to relax further than it would if the film was continuous.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A substrate material comprising: a Si-containing substrate; an insulating region that is resistant to Ge diffusion present atop and in direct contact with said Si-containing substrate; a single crystal Si layer in direct contact with the insulating region; a substantially relaxed SiGe island present in direct contact with the single crystal Si layer, wherein said substantially relaxed SiGe island has a thickness of about 2000 nm or less, a measured relaxation value of about 50% or greater and a defect density of 5×10 6 defects/cm 2 or less; and a strained silicon layer directly on the substantially relaxed SiGe island.
2. The substrate material of claim 1 wherein said insulating region is patterned.
3. The substrate material of claim 1 wherein said insulating region is unpatterned.
4. The substrate material of claim 1 wherein said insulating region includes crystalline or non-crystalline oxides, or crystalline or non-crystalline nitrides.
5. The substrate material of claim 1 wherein said insulating region is a buried oxide region that is patterned or unpatterned.
6. The method of claim 1 , wherein the substantially relaxed SiGe island does not extend across an entire width of the Si-containing substrate.
7. A heterostructure comprising: a Si-containing substrate; an insulating region that is resistant to Ge diffusion present in direct contact with the Si-containing substrate; a single crystal Si layer in direct contact with the insulating region; a relaxed SiGe island present in direct contact with the single crystal Si layer, wherein the relaxed SiGe island has a thickness of about 2000 nm or less, and a defect density of 5×10 6 defects/cm 2 or less; and a strained Si island formed atop the relaxed SiGe island.
8. The heterostructure of claim 7 wherein said insulating region is patterned.
9. The heterostructure of claim 7 wherein said insulating region is unpatterned.
10. The heterostructure of claim 7 wherein said insulating region includes crystalline or non-crystalline oxides, or crystalline or non-crystalline nitride.
11. The heterostructure of claim 7 wherein said insulating region is a buried oxide region that is patterned or unpatterned.
12. The heterostructure of claim 7 wherein alternating layers of relaxed SiGe and strained Si are formed atop said strained Si island.
13. A substrate material comprising: a Si-containing substrate; an insulating region that is resistant to Ge diffusion present atop and in direct contact with said Si-containing substrate; a single crystal Si layer in direct contact with the insulating region; a substantially relaxed single crystal SiGe island present in direct contact with the single crystal Si layer, wherein said substantially relaxed single crystal SiGe island has a thickness of about 2000 nm or less, a measured relaxation value of about 50% or greater and a defect density of 5×10 6 defects/cm 2 or less; and a strained silicon layer directly on the substantially relaxed single crystal SiGe island.
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February 14, 2008
July 24, 2012
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