Patentable/Patents/US-8248906
US-8248906

Ferroelectric hard disk system

PublishedAugust 21, 2012
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

A ferroelectric hard disk device is provided and includes: a ferroelectric media having a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head formed above the ferroelectric media, the head being operative to write and reproduce information on the ferroelectric layer.

Patent Claims
3 claims

Legal claims defining the scope of protection, as filed with the USPTO.

1

1. An apparatus comprising: a ferroelectric medium comprising a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head disposed above the ferroelectric medium, the head being operative to write and reproduce information on the ferroelectric layer, wherein the head comprises: a substrate; an insulating layer disposed on the substrate; a reading head disposed on the insulating layer, the reading head including a source, a drain, and a channel region; a separation layer disposed on the reading head; and a writing head disposed on the separation layer.

2

2. The apparatus of claim 1 , wherein the source and the drain are disposed on opposite sides of the insulating layer, and the channel region is disposed between the source and the drain.

3

3. An apparatus comprising: a ferroelectric medium comprising a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head disposed above the ferroelectric medium, the head being operative to write and reproduce information on the ferroelectric layer, wherein: the head comprises a reading head including a source, a drain, and a channel region between the source and the drain; the head is operative to reproduce information on the ferroelectric layer according to an amount of drain current flowing between the source and the drain; when an information unit of the ferroelectric layer has a dipole with a downward polarization direction, electron depletion occurs in the channel region and a first drain current flows between the source and the drain; and when an information unit of the ferroelectric layer has a dipole with an upward polarization direction, electron accumulation occurs in the channel region and a second drain current flows between the source and the drain, the second drain current being greater than the first drain current.

Classification Codes (CPC)

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Patent Metadata

Filing Date

December 26, 2007

Publication Date

August 21, 2012

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