A semiconductor-device bonding wire includes a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. An orientation ratio of <111> orientations in crystalline orientations <hkl> in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and the <111> orientations have an angular difference relative to the wire lengthwise direction, the angular difference being within 15 degrees.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A bonding wire for semiconductor devices, the bonding wire comprising: a core member formed of an electrically-conductive metal; and a skin layer formed on the core member and mainly composed of a metal different from the core member, and wherein the metal of the skin layer is a face-centered cubic metal, a thickness of the skin layer is within a range from 0.005 to 0.09 μm, an orientation ratio of <111> orientations in crystalline orientations <hkl> in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and said <111> orientations have an angular difference relative to the wire lengthwise direction, said angular difference being within 15 degrees.
2. The semiconductor-device bonding wire according to claim 1 , further comprising a diffusion layer formed between the skin layer and the core member and having a concentration gradient of each main constituent of the skin layer and the core member.
3. The semiconductor-device bonding wire according to claim 2 , wherein a main constituent of the skin layer is at least one of the followings: Pd; Pt; Ru; and Ag.
4. The semiconductor-device bonding wire according to claim 3 , wherein a main constituent of the core member is at least one of the followings: Cu; and Au.
5. The semiconductor-device bonding wire according to claim 4 , wherein the main constituent of the core member is Cu and the core member contains one or more of the followings: B; Pd; Bi; P; and Zr at a concentration within a range from 5 to 300 ppm in total.
6. The semiconductor-device bonding wire according to claim 4 , wherein the main constituent of the core member is Cu and the core member contains Pd at a concentration within a range from 5 to 10000 ppm, and the main constituent of the skin layer is Pd or Ag.
7. The semiconductor-device bonding wire according to claim 4 , wherein the main constituent of the core member is Au and the core member contains one or more of the followings: Be; Ca; Ni; Pd and Pt at a concentration within a range from 5 to 8000 ppm in total.
8. The semiconductor-device bonding wire according to claim 3 , wherein the main constituent of the core member is Cu and the core member contains one or more of the followings: B; Pd; Bi; P; and Zr at a concentration within a range from 5 to 300 ppm in total.
9. The semiconductor-device bonding wire according to claim 3 , wherein the main constituent of the core member is Cu and the core member contains Pd at a concentration within a range from 5 to 10000 ppm, and the main constituent of the skin layer is Pd or Ag.
10. The semiconductor-device bonding wire according to claim 3 , wherein the main constituent of the core member is Au and the core member contains one or more of the followings: Be; Ca; Ni; Pd and Pt at a concentration within a range from 5 to 8000 ppm in total.
11. The semiconductor-device bonding wire according to claim 2 , wherein a main constituent of the core member is at least one of the followings: Cu; and Au.
12. The semiconductor-device bonding wire according to claim 11 , wherein the main constituent of the core member is Cu and the core member contains one or more of the followings: B; Pd; Bi; P; and Zr at a concentration within a range from 5 to 300 ppm in total.
13. The semiconductor-device bonding wire according to claim 11 , wherein the main constituent of the core member is Cu and the core member contains Pd at a concentration within a range from 5 to 10000 ppm, and the main constituent of the skin layer is Pd or Ag.
14. The semiconductor-device bonding wire according to claim 11 , wherein the main constituent of the core member is Au and the core member contains one or more of the followings: Be; Ca; Ni; Pd and Pt at a concentration within a range from 5 to 8000 ppm in total.
15. The semiconductor-device bonding wire according to claim 1 , wherein a main constituent of the skin layer is at least one of the followings: Pd; Pt; Ru; and Ag.
16. The semiconductor-device bonding wire according to claim 15 , wherein a main constituent of the core member is at least one of the followings: Cu; and Au.
17. The semiconductor-device bonding wire according to claim 16 , wherein the main constituent of the core member is Cu and the core member contains one or more of the followings: B; Pd; Bi; P; and Zr at a concentration within a range from 5 to 300 ppm in total.
18. The semiconductor-device bonding wire according to claim 16 , wherein the main constituent of the core member is Cu and the core member contains Pd at a concentration within a range from 5 to 10000 ppm, and the main constituent of the skin layer is Pd or Ag.
19. The semiconductor-device bonding wire according to claim 16 , wherein the main constituent of the core member is Au and the core member contains one or more of the followings: Be; Ca; Ni; Pd and Pt at a concentration within a range from 5 to 8000 ppm in total.
20. The semiconductor-device bonding wire according to claim 15 , wherein the main constituent of the core member is Cu and the core member contains one or more of the followings: B; Pd; Bi; P; and Zr at a concentration within a range from 5 to 300 ppm in total.
21. The semiconductor-device bonding wire according to claim 15 , wherein the main constituent of the core member is Cu and the core member contains Pd at a concentration within a range from 5 to 10000 ppm, and the main constituent of the skin layer is Pd or Ag.
22. The semiconductor-device bonding wire according to claim 15 , wherein the main constituent of the core member is Au and the core member contains one or more of the followings: Be; Ca; Ni; Pd and Pt at a concentration within a range from 5 to 8000 ppm in total.
23. The semiconductor-device bonding wire according to claim 1 , wherein a main constituent of the core member is at least one of the followings: Cu; and Au.
24. The semiconductor-device bonding wire according to claim 23 , wherein the main constituent of the core member is Cu and the core member contains one or more of the followings: B; Pd; Bi; P; and Zr at a concentration within a range from 5 to 300 ppm in total.
25. The semiconductor-device bonding wire according to claim 23 , wherein the main constituent of the core member is Cu and the core member contains Pd at a concentration within a range from 5 to 10000 ppm, and the main constituent of the skin layer is Pd or Ag.
26. The semiconductor-device bonding wire according to claim 23 , wherein the main constituent of the core member is Au and the core member contains one or more of the followings: Be; Ca; Ni; Pd and Pt at a concentration within a range from 5 to 8000 ppm in total.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
December 2, 2008
October 30, 2012
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.