A light emitting diode (LED) structure, a manufacturing method thereof and a LED module are provided. The LED structure has temperature sensing function. The LED structure comprises a composite substrate and an LED. The composite substrate comprises a diode structure whose P-type semiconductor region or N-type semiconductor region has a predetermined doping concentration. The diode structure is a temperature sensor, and the sensitivity of the temperature sensor is based on the predetermined doping concentration. The LED is disposed on the composite substrate. The diode structure is used for sensing the heat emitted from the LED.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A light emitting diode (LED) structure comprises: a composite substrate comprising a first silicon substrate, a second silicon substrate, an insulation layer and a semiconductor region, wherein the first silicon substrate covers an upper surface of the insulation layer, the insulation layer is disposed between the first silicon substrate and the second silicon substrate, the semiconductor region is embedded within the first silicon substrate, the first silicon substrate and the semiconductor region together form a diode structure, wherein the first silicon substrate is one of a P-type semiconductor region and an N-type semiconductor region of the diode structure, the semiconductor region is another of the P-type semiconductor region and the N-type semiconductor region of the diode structure, and the P-type semiconductor region or the N-type semiconductor region has a predetermined doping concentration, the diode structure is a temperature sensor, and the sensitivity of the temperature sensor is based on the predetermined doping concentration; and an LED disposed on the composite substrate; wherein, the diode structure is used for sensing a heat emitted from the LED.
2. The LED structure according to claim 1 , wherein the predetermined doping concentration ranges between 10 17 and 10 19 cm −3 .
3. The LED structure according to claim 1 , wherein the LED is adjacent to the diode structure.
4. The LED structure according to claim 1 , wherein the heat transfer coefficient of the insulation layer is smaller than that of the first silicon substrate and the second silicon substrate.
5. The LED structure according to claim 1 , further comprising: a semiconductor thermoelectric cooling (TEC) chip, wherein the composite substrate is disposed on and connected to the semiconductor TEC chip.
6. The LED structure according to claim 1 , wherein the composite substrate has a groove, which passes through the second silicon substrate and the insulation layer; wherein, the LED is disposed on the groove.
7. The LED structure according to claim 1 , wherein the diode structure comprises a Zener diode, a Schottky diode or a diode formed by elements of group III-V.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 25, 2009
November 6, 2012
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