The heat-release properties of semiconductor device are to be improved and the reliability thereof is to be improved.The semiconductor device has a wiring substrate, a heat-releasing plate having a convex part inserted into a through-hole of the wiring substrate, a semiconductor chip mounted over the convex part of the heat-releasing plate, and a bonding wire coupling an electrode pad of the semiconductor chip with a bonding lead of the wiring substrate, and further has a sealing portion covering a portion of an upper surface of the wiring substrate, a sealing portion covering a portion of a lower surface of the wiring substrate including the semiconductor chip and the bonding wire, and a solder ball placed over a lower surface of the wiring substrate. In manufacturing the semiconductor device, the heat-releasing plate is positioned at the upper surface side of the wiring substrate such that the convex part is positioned in the through-hole, and a groove in the main surface of the convex part is forcibly widened to swage the convex part and to be fixed to the wiring substrate.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of manufacturing a semiconductor device, comprising the steps of: (a) providing a wiring substrate including a first main surface, a first rear surface opposite to the first main surface, a through-hole penetrating the wiring substrate from the first main surface to the first rear surface, a plurality of bonding leads formed over the first rear surface and formed around the through-hole in plan view, and a plurality of bump lands formed over the first rear surface and respectively coupled with the bonding leads; (b) providing a heat-releasing plate including a base material part having a second main surface and a second rear surface opposite to the second main surface, a convex part of the heat-releasing plate being positioned at a central part of the second main surface of the base material part and protruding from the base material part, and a supporting part formed over the second main surface of the base material part; (c) mounting a semiconductor chip, including a third main surface having a plurality of electrode pads, over the convex part of the heat-releasing plate; (d) placing the heat-releasing plate with respect to the first main surface of the wiring substrate such that the second main surface of the base material part faces the first main surface of the wiring substrate, such that the convex part is positioned in the through-hole, and such that the supporting part contacts with the first main surface of the wiring substrate; (e) after the step (d), fixing the heat-releasing plate to the wiring substrate; (f) after the step (e), coupling the electrode pads of the semiconductor chip with the bonding leads of the wiring substrate via respective conductive coupling members; and (g) after the step (f), sealing the semiconductor chip and the conductive coupling members with a resin material, wherein the convex part of the heat-releasing plate provided in the step (b) has a fourth main surface having a groove formed therein and a side surface positioned between the fourth main surface and the second main surface of the base material part, wherein the supporting part has a supporting surface positioned between the fourth main surface of the convex part and the second main surface of the base material, and a side surface positioned between the supporting surface and the second main surface of the base material, wherein, in the step (c), the semiconductor chip is mounted over the fourth main surface of the convex part, wherein, in the step (d), the heat-releasing plate is positioned with respect to the first main surface of the wiring substrate such that the side surface of the convex part positioned in the through-hole faces an inside wall of the through-hole, and wherein, in the step (e), a portion of the side surface of the convex part is brought into contact with the inside wall of the through-hole by forcibly widening the groove in the fourth main surface of the convex part, and the heat-releasing plate is thus fixed to the wiring substrate.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein, in the step (e), the groove in the fourth main surface of the convex part is widened forcibly by using a jig.
3. The method of manufacturing a semiconductor device according to claim 2 , wherein the convex part of the heat-releasing plate has the groove in a peripheral area of the fourth main surface.
4. The method of manufacturing a semiconductor device according to claim 3 , wherein, in the step (c), the semiconductor chip is mounted over the fourth main surface of the convex part at a position closer to a center of the convex part than the groove.
5. The method of manufacturing a semiconductor device according to claim 4 , further comprising the step (h), after the step (g), of forming a plurality of external terminals above the bump leads directly on the wiring substrate.
6. The method of manufacturing a semiconductor device according to claim 5 , wherein, after the step (e), a first gap part exists at least at one position between the side surface of the convex part and the inside wall of the through-hole, which gap part separates the side surface of the convex part from the inside wall of the through-hole and penetrates from the first main surface to the first rear surface of the wiring substrate, and wherein, in the step (g), the resin material is supplied to the first main surface side of the wiring substrate and also to the first rear surface side of the wiring substrate through the first gap part.
7. The method of manufacturing a semiconductor device according to claim 6 , wherein, in the step (g), a first sealing portion is formed at the first rear surface side of the wiring substrate, and a second sealing portion is formed at the first main surface side of the wiring substrate by using the resin material, and wherein the semiconductor chip and the conductive coupling members are sealed by the first sealing portion.
8. The method of manufacturing a semiconductor device according to claim 7 , wherein, after the step (e), the first gap part exists at more than one position between the side surface of the convex part and the inside wall of the through-hole.
9. The method of manufacturing a semiconductor device according to claim 8 , wherein, after the step (e), the supporting part contacts with the first main surface of the wiring substrate, and a gap is formed between the second main surface of the base material part and the first main surface of the wiring substrate, and wherein, in the step (g), the resin material supplied to the first main surface side of the wiring substrate is supplied to the first rear surface side of the wiring substrate through the gap and the first gap part.
10. The method of manufacturing a semiconductor device according to claim 9 , wherein, in the step (g), the resin material also fills the gap and the first gap part.
11. The method of manufacturing a semiconductor device according to claim 10 , wherein the second rear surface of the base material part of the heat-releasing plate is exposed from the first sealing portion.
12. The method of manufacturing a semiconductor device according to claim 11 , wherein, in the step (g), the resin material fills between the side surface of the convex part not directly contacting with the inside wall of the through-hole and the inside wall of the through-hole.
13. The method of manufacturing a semiconductor device according to claim 12 , wherein a plan shape of the through-hole of the wiring substrate provided in the step (a) and a plan shape of the convex part of the heat-releasing plate provided in the step (b) are each a rectangle, and a corresponding first gap part is formed at each of the four corners of the respective rectangles.
14. The method of manufacturing a semiconductor device according to claim 13 , wherein the fourth main surface of the convex part of the heat-releasing plate fixed to the wiring substrate in the step (e) is positioned at a height between the first main surface of the wiring substrate and the convex part.
15. The method of manufacturing a semiconductor device according to claim 13 , wherein the fourth main surface of the convex part of the heat-releasing plate fixed to the wiring substrate in the step (e) is positioned at substantially a same height as that of the position of the first main surface of the wiring substrate.
16. The method of manufacturing a semiconductor device according to claim 1 , wherein the step (d) is conducted after the step (c), and the step (d) places the heat-releasing plate with respect to the first main surface of the wiring substrate such that the convex part over which the semiconductor chip is mounted is positioned in the through-hole.
17. The method of manufacturing a semiconductor device according to claim 16 , wherein, in the step (c), the semiconductor chip is mounted over and joined with the fourth main surface of the convex part of the heat-releasing plate via a solder.
18. The method of manufacturing a semiconductor device according to claim 1 , wherein the step (d) is conducted before the step (c).
19. The method of manufacturing a semiconductor device according to claim 18 , wherein, in the step (c), the semiconductor chip is mounted over and joined with the fourth main surface of the convex part of the heat-releasing plate via a silver paste.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
December 7, 2010
November 13, 2012
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