A wafer (or a circuit board), which is used to perform three-dimensional mounting, has protrusion 20 which is provided in low melting point metal 15 for electrically connecting mutually joined wafers 61 and 62, and which defines an interval between mutually joined wafers 61 and 62 without being deformed at the time when low melting point metal 15 is melted. A joining structure of wafers 61 and 62 is manufactured by using wafers 61 and 62, at least one of which has protrusion 20. In the manufactured joining structure of wafers 61 and 62, wafers 61 and 62 are electrically connected to each other by low melting point metal 15, and protrusion 20, which defines the interval between wafers 61 and 62 without being deformed at the time when low melting point metal 15 is melted, is provided in low melting point metal 15.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A laminated device, comprising: a first substrate having a first surface upon which is mounted a first join structure; a second substrate having a second surface upon which is mounted a second join structure; and a low-melting point metal providing a mechanism to laminate together said first substrate and said second substrate by melting together said first join structure and said second join structure upon an application of heat, so that said first surface and said second surface are adjacent, said first join structure including a first conductive film, a protrusion portion and a first metal, said protrusion portion being positioned on said first conductive film, said first metal covering an upper surface and a side surface of said protrusion portion and a part of said first conductive film, said first metal having a first top surface and a second top surface, said first top surface being higher than said second top surface from said first conductive film, said first metal having a melting point higher than said low-melting point, said second join structure including a second conductive film and a second metal, said second metal having a melting point higher than said low-melting point, said first top surface of said first metal being contacted directly with said second metal, and said low-melting point metal being placed between said second top surface of said first metal and said second metal.
2. The laminated device of claim 1 , wherein an adhesive material is applied to at least one of said first surface and said second surface and a pressure is applied to force together said first and said second surfaces when said heat is applied.
3. The laminated device of claim 1 , wherein said first substrate and said second substrate respectively comprise either a wafer or a circuit board.
4. The laminated device of claim 1 , wherein said low-melting point metal comprises a metal having a melting point of 400° C. or less.
5. The laminated device of claim 4 , wherein said low-melting point metal comprises tin.
6. The laminated device of claim 1 , wherein said protrusion portion comprises at least one of nickel, gold, silver, and copper.
7. The laminated device of claim 1 , wherein both said first join structure and said second join structure include said protrusion portion.
8. The laminated device of claim 1 , wherein at least one of said first join structure and said second join structure includes both a portion of low-melting point metal and a protrusion portion.
9. The laminated device of claim 1 , wherein said first substrate comprises a third surface being on the opposite side of said first surface, said third surface further includes a third join structure so that said first substrate is similarly laminated with a third substrate via said third join structure, said third substrate comprising one of a wafer, a circuit board, and a chip.
10. The laminated device of claim 9 , wherein said second substrate comprises a fourth surface being on the opposite side of said second surface, said fourth surface further includes a fourth join structure so that said second substrate is similarly laminated with a fourth substrate via said fourth join structure, said fourth substrate comprising one of a wafer, a circuit board, and a chip.
11. The laminated device of claim 1 , wherein said first substrate comprises a first wafer and said second substrate comprises a second wafer, and said first and second wafers comprise wafer components of a laminated wafer structure.
12. A laminated device, comprising: a first substrate having a first surface upon which is mounted a first join structure; a second substrate having a second surface upon which is mounted a second join structure; and a low-melting point metal providing a mechanism to laminate together said first substrate and said second substrate by melting together said first join structure and said second join structure upon an application of heat, so that said first surface and said second surface are adjacent, both of said first join structure and said second join structure including a conductive film, both of said first join structure and said second join structure including a protrusion portion, both of an upper surface and a side surface of said protrusion portion covered with a first metal having a melting point higher than said low-melting point, said first metal covering part of said conductive film, said first metal having a first top surface and a second top surface, said first top surface being higher than said second top surface from said conductive film, said each first top surface of said first metal in said first join structure and said second join structure is contacted physically during said application of heat, and said low-melting point metal being placed between said second top surface of said first metal in said first join structure and said second join structure.
13. The laminated device of claim 12 , wherein an adhesive material is applied to at least one of said first surface and said second surface and a pressure is applied to force together said first and said second surfaces when said heat is applied.
14. The laminated device of claim 12 , wherein said first substrate and said second substrate respectively comprise either a wafer or a circuit board.
15. The laminated device of claim 12 , wherein said low-melting point metal comprises a metal having a melting point of 400° C. or less.
16. The laminated device of claim 12 , wherein said low-melting point metal comprises tin.
17. The laminated device of claim 12 , wherein said protrusion portion comprises at least one of nickel, gold, silver, and copper.
18. The laminated device of claim 12 , wherein said first substrate comprises a third surface being on the opposite side of said first surface, said third surface further includes a third join structure so that said first substrate is similarly laminated with a third structure via said third join structure, and said third substrate comprising one of a wafer, a circuit board, and a chip.
19. The laminated device of claim 18 , wherein said second substrate comprises a fourth surface being on the opposite side of said second surface, said fourth surface further includes a fourth join structure so that said second substrate is similarly laminated with a fourth substrate via said fourth join structure, said fourth substrate comprising one of a wafer, a circuit board, and a chip.
20. The laminated device of claim 12 , wherein said first substrate comprises a first wafer and said second substrate comprises a second wafer, and said first and second wafers comprise wafer components of a laminated wafer structure.
21. A laminated device comprising: a first substrate having a first surface upon which is mounted a first join structure; and a second substrate having a second surface upon which is mounted a second join structure, each of the first join structure and the second join structure including: a conductor film formed on the substrate and having a first top surface, a second top surface, and a third top surface positioned between the first and second top surfaces; a protrusion formed on the third top surface of the conductive film; and a metal including a first metal having a first top surface formed on an upper surface of the protrusion and second and third metals, the first metal being further formed on a side surface of the protrusion, said second and third metals being formed respectively on the first and second top surface of the conductive film and each having a second top surface, the first top surface being higher than said second top surface from the conductive film, each of the first top surface of the first metal in the first and second join structure being contacted directly, and a low melting point metal being placed on the second top surface of the second and third metals.
22. The laminated device of claim 1 , wherein said first metal has a melting point higher than that of said low-melting point metal.
23. The laminated device of claim 1 , wherein: said first metal includes a first portion having a first part of the second top surface, a second portion having a second part of said second top surface, and a third portion having said first top surface and positioned between said first and second portions; said second metal includes a fourth portion facing said first portion, a fifth portion facing said second portion, and a sixth portion facing said third portion, and said fourth portion, said fourth portion, and said fifth portion have a same height from said second conductive film; and said low-melting point metal includes a first low-melting point metal positioned between said first portion and said fourth portion, and a second low-melting point metal positioned between said second portion and said fifth portion.
24. The laminated device of claim 12 , wherein: said first metal belonging to said first join structure includes first and second portions each having said second top surface belonging to said first join structure, and a third portion having said first top surface and positioned between said first and second portions; said first metal belonging to said second join structure includes fourth and fifth portions each having said second top surface belonging to said second join structure, and a sixth portion having said first top surface and positioned between said fourth and fifth portions; said first, second, and third portions respectively face said fourth, fifth, and sixth portions; and said low-melting point metal includes a first low-melting point metal positioned between said first portion and said fourth portion, and a second low-melting point metal positioned between said second portion and said fifth portion.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 30, 2008
December 18, 2012
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