Patentable/Patents/US-8383457
US-8383457

Semiconductor device and method of forming interposer frame over semiconductor die to provide vertical interconnect

PublishedFebruary 26, 2013
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame.

Patent Claims
20 claims

Legal claims defining the scope of protection, as filed with the USPTO.

1

1. A method of making a semiconductor device, comprising: providing a carrier; mounting a first semiconductor die over the carrier; providing an interposer frame including an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame; mounting the interposer frame over the carrier and first semiconductor die including disposing the conductive pillars around the first semiconductor die; depositing an encapsulant through the opening in the interposer frame and over the carrier and first semiconductor die; removing the carrier; and forming an interconnect structure over the encapsulant and first semiconductor die.

2

2. The method of claim 1 , further including forming a cavity in the interposer frame to contain a portion of the first semiconductor die.

3

3. The method of claim 1 , further including forming alignment marks over the carrier to assist with mounting the interposer frame.

4

4. The method of claim 1 , further including mounting a second semiconductor die over the first semiconductor die prior to depositing the encapsulant.

5

5. The method of claim 1 , further including mounting a second semiconductor die over the interposer frame.

6

6. The method of claim 5 , further including forming a bond wire between the second semiconductor die and the interposer frame.

7

7. A method of making a semiconductor device, comprising: providing a carrier; mounting a first semiconductor die over the carrier; depositing an encapsulant over the carrier and first semiconductor die; providing an interposer frame including an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame; mounting the interposer frame over the carrier and first semiconductor die by pressing the interposer frame against the encapsulant; removing the carrier; and forming an interconnect structure over the encapsulant and first semiconductor die.

8

8. The method of claim 7 , wherein excess encapsulant exits through the opening in the interposer frame.

9

9. The method of claim 7 , wherein the conductive pillars are disposed around the first semiconductor die.

10

10. The method of claim 7 , further including forming a cavity in the interposer frame to contain a portion of the first semiconductor die.

11

11. The method of claim 7 , further including mounting a second semiconductor die over the first semiconductor die prior to depositing the encapsulant.

12

12. The method of claim 7 , further including mounting a second semiconductor die over the interposer frame.

13

13. The method of claim 12 , further including forming a bond wire between the second semiconductor die and the interposer frame.

14

14. A method of making a semiconductor device, comprising: providing a first semiconductor die; providing an interposer frame including an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame; mounting the interposer frame over the first semiconductor die including disposing the conductive pillars around the first semiconductor die; depositing an encapsulant over the first semiconductor die; and forming an interconnect structure over the encapsulant and first semiconductor die.

15

15. The method of claim 14 , further including: depositing the encapsulant over the first semiconductor die prior to mounting the interposer frame; and pressing the interposer frame against the encapsulant.

16

16. The method of claim 15 , wherein excess encapsulant exits through the opening in the interposer frame.

17

17. The method of claim 14 , further including depositing the encapsulant through the opening in the interposer frame over the first semiconductor die.

18

18. The method of claim 14 , further including forming a cavity in the interposer frame to contain a portion of the first semiconductor die.

19

19. The method of claim 14 , further including mounting a second semiconductor die over the first semiconductor die prior to depositing the encapsulant.

20

20. The method of claim 14 , further including mounting a second semiconductor die over the interposer frame.

Classification Codes (CPC)

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Patent Metadata

Filing Date

September 3, 2010

Publication Date

February 26, 2013

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Cite as: Patentable. “Semiconductor device and method of forming interposer frame over semiconductor die to provide vertical interconnect” (US-8383457). https://patentable.app/patents/US-8383457

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