Subject matter disclosed herein relates to semiconductor memories and, more particularly, to multilevel non-volatile or volatile memories.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method comprising: storing states in one or more multilevel memory cells, said storing states comprising encoding said states according to a convolutional code to provide symbols representing said states; and determining said encoded states using soft decision and convolutional decoding, wherein determining further comprises: reading soft decisions associated with sensed threshold voltages from the multilevel memory cells; maintaining sets of periodic functions, wherein each set is associated with a different plurality of program distributions of stored states, wherein the stored states associated with a particular periodic function are periodic with respect to one another; associating a soft decision with a particular set of the periodic functions; and selecting a program distribution from the particular set of periodic functions based at least partly on a calculation of a most probable encoding path that had been followed for encoding.
2. The method of claim 1 , wherein said determining said encoded states further comprises: retrieving said stored states from said stored values and applying said soft decision and convolutional decoding to recover said stored states.
3. The method of claim 1 , wherein said soft decision comprises determining a most probable program state among a plurality of program states to determine said encoded states.
4. The method of claim 1 , wherein said multilevel memory cells are capable of storing two or more bits.
5. The method of claim 1 , wherein said values comprise a measurement of a probability that a sensed threshold voltage belongs to a particular program distribution of said one or more multilevel memory cells.
6. A memory device comprising: a memory array to store states across one or more multilevel memory cells; and a controller configured to: encode said states according to a convolutional code to provide symbols representing said states; read soft decisions associated with sensed threshold voltages from the multilevel memory cells; access sets of periodic functions, wherein each set is associated with a different plurality of program distributions of stored states, wherein the stored states associated with a particular periodic function are periodic with respect to one another; associate a soft decision with a particular set of the periodic functions; and select a program distribution from the particular set of periodic functions based at least partly on a calculation of a most probable encoding path that had been followed for encoding to determine said encoded states using soft decision and convolutional decoding.
7. The memory device of claim 6 , wherein said soft decision comprises determining a most probable program state among a plurality of program states to determine said encoded states.
8. The memory device of claim 6 , further comprising: a sensing circuit to determine said threshold voltages of said one or more multilevel memory cells; and a converter to convert said values to a digital sequence of numbers indicating said threshold voltages of said one or more multilevel memory cells.
9. The memory device of claim 8 , wherein said sensing circuit comprises a voltage comparator having multiple inputs to receive a bit line voltage corresponding to one of said one or more multilevel memory cells and a reference voltage.
10. The memory device of claim 6 , wherein said multilevel memory cells are capable of storing two or more bits.
11. The memory device of claim 6 , further comprising: a decoding unit to generate said values to quantify a probability that a sensed threshold voltage belongs to a particular program distribution of said one or more multilevel memory cells.
12. A system comprising: a memory device comprising: a memory array configured to store states across one or more multilevel memory cells, and a controller configured to: encode said states according to a convolutional code to provide symbols representing said states; read soft decisions associated with sensed threshold voltages from the multilevel memory cells; access sets of periodic functions, wherein each set is associated with a different plurality of program distributions of stored states, wherein the stored states associated with a particular periodic function are periodic with respect to one another; associate a soft decision with a particular set of the periodic functions; and select a program distribution from the particular set of periodic functions based at least partly on a calculation of a most probable encoding path that had been followed for encoding to determine said stored states using soft decision and convolutional decoding; and a processor to host one or more applications and to initiate write and/or read commands to said memory device controller to provide access to said memory array.
13. The system of claim 12 , wherein said soft decision comprises determining a most probable program state among a plurality of program states to determine said stored states.
14. The system of claim 12 , further comprising: a sensing circuit to determine said threshold voltages of said one or more multilevel memory cells; and a converter to convert said values to a digital sequence of numbers indicating said threshold voltages of said one or more multilevel memory cells.
15. The system of claim 14 , wherein said sensing circuit comprises a voltage comparator having multiple inputs to receive a bit line voltage corresponding to one of said one or more multilevel memory cells and a reference voltage.
16. The system of claim 12 , wherein said convolutional encoding comprises Viterbi encoding.
17. The system of claim 12 , further comprising: a decoding unit to generate said values to quantify a probability that a sensed threshold voltage belongs to a particular program distribution of said one or more multilevel memory cells.
18. The method of claim 1 , further comprising storing said values as multi-bit strings in said one or more multilevel memory cells.
19. The method of claim 18 , wherein said storing said values as multibit strings in said one or more multilevel memory cells further comprises storing said values as multi-bit strings in two or more of said multilevel memory cells.
20. The memory device of claim 6 , wherein said controller is further adapted to store said values as multi-bit strings in said one or more multilevel memory cells.
21. The method of claim 1 , wherein the sets of periodic functions are maintained in a lookup table.
22. The memory device of claim 6 , further comprising a look-up table configured to store the sets of periodic functions.
23. The system of claim 12 , further comprising a look-up table configured to store the sets of periodic functions.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
May 19, 2010
February 26, 2013
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