A thin film transistor having (a) an oxide semiconductor film including a channel region composed of an oxide semiconductor, and a source electrode region and a drain electrode region that are composed of the same oxide semiconductor as that of the channel region and have a higher carrier density than that of the channel region; (b) a gate insulating film; and (c) a gate electrode.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A thin film transistor comprising: an oxide semiconductor film including (a) a source electrode region, (b) a drain electrode region and (c) a channel region between the source electrode and drain electrode regions; a gate insulating film; and a gate electrode, wherein, each of the source electrode region and the drain electrode region has a carrier density that is higher than that of the channel region, and the carrier density of the channel region is from 1.0*10 13 /cm 3 to 1.0*10 18 /cm 3 inclusive.
2. A display unit comprising: a thin film transistor; and a pixel, wherein, the thin film transistor comprises an oxide semiconductor film, the oxide semiconductor film including a (a) a source electrode region (b) a drain electrode region, and (c) a channel region between the source electrode and drain electrode regions, each of the source electrode region and the drain electrode region has a carrier density that is higher than that of the channel region, and the carrier density of the channel region is from 1.0*10 13 /cm 3 to 1.0*10 18 /cm 3 inclusive.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 16, 2012
March 12, 2013
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