A semiconductor apparatus includes a cubic silicon carbide single crystal thin film of a multilayer structure including an AlxGa1-xAs (0.6>x≧0) layer and a cubic silicon carbide single crystal layer. The apparatus also includes a substrate on which a metal layer is formed. The multilayer structure is bonded to a surface of the metal layer with the AlxGa1-xAs (0.6>x≧0) in direct contact with the metal layer.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor apparatus comprising: a cubic silicon carbide single crystal thin film of a multilayer structure including an Al x Ga 1-x As (0.6>x≧0) layer and a cubic silicon carbide single crystal layer; and a substrate on which a metal layer is formed; wherein the multilayer structure is bonded to a surface of the metal layer with the Al x Ga 1-x As (0.6>x≧0) in direct contact with the metal layer.
2. The semiconductor apparatus according to claim 1 , wherein the contact resistance between the Al x Ga 1-x As (0.6>x≧0) layer and the metal layer is lower than the resistance of the Al x Ga 1-x As (0.6>x≧0) between two opposing principal surfaces of the Al x Ga 1-x As (0.6>x≧0).
3. The semiconductor apparatus according to claim 1 , wherein the Al x Ga 1-x As (0.6>x≧0) layer is in ohmic contact with the metal layer.
4. The semiconductor apparatus according to claim 3 , wherein the metal layer is formed of one selected from the group consisting of Ti, AuGeNi, and Ni/Ge.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
June 6, 2012
March 12, 2013
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