Patentable/Patents/US-8418910
US-8418910

Electroconductive bonding material, method for bonding conductor, and method for manufacturing semiconductor device

PublishedApril 16, 2013
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

An electro-conductive bonding material includes: metal components of a high-melting-point metal particle that have a first melting point or higher; a middle-melting-point metal particle that has a second melting point which is first temperature or higher, and second temperature or lower, the second temperature is lower than the first melting point and higher than the first temperature; and a low-melting-point metal particle that has a third melting point or lower, the third melting point is lower than the first temperature.

Patent Claims
10 claims

Legal claims defining the scope of protection, as filed with the USPTO.

1

1. An electro-conductive bonding material comprising: metal components of a high-melting-point metal particle that has a first melting point of 150° C. or higher; a middle-melting-point metal particle that has a second melting point which is between 80° C. and 139° C.; and a low-melting-point metal particle that has a third melting point of 79° C. or lower.

2

2. The electro-conductive bonding material according to claim 1 , wherein the content of the high-melting-point metal particle in the metal component is 80 mass % to 90 mass %, the content of the middle-melting-point metal particle in the metal component is 5 mass % to 15 mass %, and the content of the low-melting-point metal particle in the metal component is 5 mass % to 15 mass %.

3

3. The electro-conductive bonding material according to claim 1 , wherein the high-melting-point metal particle is at least one particle selected from the group consisting of an Au particle, an Ag particle, a Cu particle, an Au-plated Cu particle, an Sn—Bi-plated Cu particle and an Ag-plated Cu particle.

4

4. The electro-conductive bonding material according to claim 1 , wherein the high-melting-point metal particle is any one of the Au-plated Cu particle, the Sn—Bi-plated Cu particle and the Ag-plated Cu particle.

5

5. The electro-conductive bonding material according to claim 1 , wherein the low-melting-point metal particle is an Sn—Bi—In particle and the middle-melting-point metal particle is an Sn—Bi particle.

6

6. The electro-conductive bonding material according claim 1 , wherein the metal component is a multilayer metal particle which has a middle-melting-point metal layer formed of the middle-melting-point metal particle and a low-melting-point metal layer formed of the low-melting-point metal particle formed on the surface of the high-melting-point metal particle, in this order.

7

7. The electro-conductive bonding material according to claim 6 , wherein the average particle size of the high-melting-point metal particles is 40 μm or less, the average thickness of the middle-melting-point metal layer is 1 μm or more, and the average thickness of the low-melting-point metal layer is 1 μm or more.

8

8. The electro-conductive bonding material according to claim 1 , wherein the content of the metal component is 50 mass % to 95 mass % with respect to the electroconductive bonding material.

9

9. The electro-conductive bonding material according to claim 1 , further comprising a flux component which comprises at least any one of an epoxy-based flux material and a rosin-based flux material.

10

10. The electro-conductive bonding material according to claim 9 , wherein the content of the flux component is 5 mass % to 50 mass % with respect to the electroconductive bonding material.

Classification Codes (CPC)

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Patent Metadata

Filing Date

February 7, 2012

Publication Date

April 16, 2013

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Cite as: Patentable. “Electroconductive bonding material, method for bonding conductor, and method for manufacturing semiconductor device” (US-8418910). https://patentable.app/patents/US-8418910

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Electroconductive bonding material, method for bonding conductor, and method for manufacturing semiconductor device — Takashi Kubota | Patentable