Controlled localized defect paths for resistive memories

1. A method for forming a resistive switching memory element comprising: forming a first electrode; forming a metal oxide layer on the first electrode; masking the metal oxide layer to create exposed regions and concealed regions of a surface of the metal oxide layer; and altering the exposed regions of the metal oxide layer and creating localized defect paths beneath the exposed regions.

2. The method of claim 1 , wherein altering comprises implanting ions into the metal oxide layer.

3. The method of claim 2 , wherein the ions are chosen from the group consisting of metal ions, halide ions, and oxygen ions.

4. The method of claim 2 , wherein implanting ions comprises creating defects comprising at least one of oxygen vacancies, metal interstitals, and oxygen interstitals.

5. The method of claim 1 , wherein masking comprises depositing and patterning photoresist on the metal oxide layer.

6. The method of claim 1 , wherein the metal oxide layer is selected from the group consisting of hafnium oxide, titanium oxide, aluminum oxide, zirconium oxide, niobium oxide, hafnium titanium oxide, hafnium aluminum oxide, lanthanum oxide, and molybdenum oxide.

7. The method of claim 1 , wherein a first work function of the first electrode is less than a second work function of the second electrode.

8. The method of claim 7 , further comprising: applying a set pulse to create non-metallic percolation paths in the metal oxide layer; and applying a reset pulse to destroy the non-metallic percolation paths.

9. The method of claim 8 , wherein applying the set pulse is positive at the second electrode and the reset pulse is negative at the second electrode.

10. The method of claim 1 : wherein the first electrode is selected from the group consisting of titanium nitride, silicide, cobalt silicide, nickel silicide, palladium silicide, platinum silicide, titanium silicide, tantalum nitride, molybdenum nitride, tungsten, tungsten nitride, and polysilicon; and wherein the second electrode is selected from the group consisting of platinum, ruthenium, ruthenium oxide, iridium, iridium oxide, titanium nitride, and nickel.

11. A method comprising: forming a first electrode having a first work function; forming a metal oxide layer over the first electrode, the metal oxide layer having a bandgap greater than 4 eV; masking the metal oxide layer to create exposed regions and concealed regions in of a surface of the metal oxide layer; altering exposed regions of the metal oxide layer and creating defect paths; annealing the metal oxide layer to form localized channels from the defect paths; and depositing a second electrode having a second work function that is between 0.1 and 1.0 eV different from the first work function.

12. The method of claim 11 , wherein the metal oxide layer is selected from the group consisting of: hafnium oxide, aluminum oxide, tantalum oxide, zirconium oxide, yttrium oxide, and lanthanum oxide.

13. The method of claim 11 , wherein: the first electrode is doped silicon; and the second electrode is titanium nitride.

14. The method of claim 11 , wherein masking the metal oxide layer comprises depositing photoresist on the metal oxide layer.

15. The method of claim 11 , wherein the defect paths comprise non-metallic percolation paths.

16. The method of claim 15 , wherein the defect paths include at least one of oxygen vacancies, metal interstitials, metal substitutionals, and oxygen interstitials.