A method for manufacturing a semiconductor device includes forming a laminated structure of a plurality of metal films on a semiconductor substrate using an electroless plating method. The forming of the metal films includes: performing an electroless plating process including a reduction reaction using a first plating tank; and performing an electroless plating process by only a substitution reaction using a second plating tank. The electroless plating process including the reduction reaction that is performed using the first plating tank is performed in a shading environment, and the electroless plating process performed by only the substitution reaction using the second plating tank is performed in a non-shading environment.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing a semiconductor device, the method comprising: forming a laminated structure of a plurality of metal films on a semiconductor substrate using an electroless plating method, wherein said forming of the metal films includes: performing an electroless plating process including a reduction reaction using a first plating tank; and performing an electroless plating process by only a substitution reaction using a second plating tank, said electroless plating process including said reduction reaction that is performed using said first plating tank is performed in a shading environment, and said electroless plating process performed by only said substitution reaction using said second plating tank is performed in a non-shading environment.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein a plating solution used in said first plating tank includes a reducing agent.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein said forming of the metal films further includes performing an electroless plating process by only a substitution reaction using a third plating tank, and said electroless plating process performed by only said substitution reaction using said third plating tank is performed in said non-shading environment.
4. The method for manufacturing a semiconductor device as claimed in claim 3 , wherein, in said performing of the electroless plating process including said reduction reaction using said first plating tank, a Ni film Or a metal film including Ni is formed, in said performing of the electroless plating process by only said substitution reaction using said second plating tank, a Pd film or a metal film including Pd is formed, in said performing of the electroless plating process by only said substitution reaction using said third plating tank, an Au film is formed, and said Ni film or said metal film including Ni, said Pd film or said metal film including Pd, and said Au film are formed in this order.
5. The method for manufacturing a semiconductor device as claimed in claim 4 , wherein a plating solution used in said first plating tank includes a reducing agent, a plating solution used in said second plating tank includes a reducing agent, and a plating solution used in said third plating tank does not include a reducing agent.
6. The method for manufacturing a semiconductor device as claimed in claim 3 , wherein said forming of the metal films further includes performing an electroless plating process including a reduction reaction using a fourth plating tank, and said electroless plating process including said reduction reaction that is performed using said fourth plating tank is performed in a shading environment.
7. The method for manufacturing a semiconductor device as claimed in claim 6 , wherein said electroless plating process including said reduction reaction that is performed using said fourth plating tank is performed on said metal film which is formed by said electroless plating process performed by only said substitution reaction using said third plating tank, and in said performing of said electroless plating process including said reduction reaction using said fourth plating tank, a metal film is made of a same material as that forming said metal film which is formed by said electroless plating process performed by only the substitution reaction using said third plating tank.
8. The method for manufacturing a semiconductor device as claimed in claim 7 , wherein a plating solution used in said fourth plating tank includes a reducing agent.
9. The method for manufacturing a semiconductor device as claimed in claim 6 , wherein, in said performing of the electroless plating process including said reduction reaction using said first plating tank, a Ni film or a metal film including Ni is formed, in said performing of the electroless plating process by only said substitution reaction using said second plating tank, a Pd film or a metal film including Pd is formed, in said performing of the electroless plating process by only said substitution reaction using said third plating tank, a first Au film is formed, in said performing of the electroless plating process including said reduction reaction using said fourth plating tank, a second Au film is formed, and said Ni film or said metal film including Ni, said Pd film or said metal film including Pd, said first Au film, and said second Au film are formed in this order.
10. The method for manufacturing a semiconductor device as claimed in claim 1 , wherein said metal films are formed on an electrode that is formed on said semiconductor substrate, and said electrode comprises a metal layer made of at least one of Cu, a metal material including Cu, Al, a metal material including Al, W, a metal material including W, Ag and a metal material including Ag, or a laminated structure of the metal films.
11. A semiconductor device manufacturing apparatus that forms a laminated structure of a plurality of metal films on a semiconductor substrate using an electroless plating method, the semiconductor device manufacturing apparatus comprising: a first plating tank that performs an electroless plating process including a reduction reaction in a shading environment; and a second plating tank that performs an electroless plating process by only a substitution reaction in a non-shading environment.
12. The semiconductor device manufacturing apparatus as claimed in claim 11 , further comprising: a holder that holds said semiconductor substrate and immerses said semiconductor substrate in said first plating tank in a light-shielded state.
13. A method of forming metal films on a semiconductor substrate, the method comprising: performing a first electroless plating process including a reduction reaction, the first electroless plating process being performed in a shading environment; and performing a second electroless plating process including a substitution reaction, the second electroless plating process being performed in a non-shading environment.
14. The method according to claim 13 , wherein the first electroless plating process is performed using a plating tank having a cover provided at an opening thereof.
15. The method according to claim 14 , wherein the cover includes an opaque material.
16. The method according to claim 14 , wherein the plating tank is configured to hold a plating solution, and the cover includes a material that is not corroded by the plating solution.
17. The method according to claim 14 , further comprising: opening the cover to receive the semiconductor substrate; and closing the cover during the first electroless plating process.
18. The method according to claim 13 , further comprising performing a third electroless plating process in a shading environment.
19. The method according to claim 18 , wherein the second electroless plating process is performed before the third electroless plating process.
20. The method according to claim 19 , wherein the first electroless plating process is performed before the second electroless plating process.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
June 9, 2010
April 23, 2013
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