Patentable/Patents/US-8440941
US-8440941

Heat treatment apparatus, heat treatment method and method for manufacturing semiconductor device

PublishedMay 14, 2013
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

Provided is a heat treatment apparatus in which a large-sized substrate can be rapidly heated and rapidly cooled with high uniformity, and a heat treatment method using the heat treatment apparatus. The heat treatment apparatus includes: a first chamber of which one side is opened; a second chamber of which one side is opened; a device for moving the first and the second chambers; a heating device; a gas introduction port; a gas exhaust port; and a jig for longitudinally fixing a substrate, in which the substrate is rapidly heated while the first and the second chambers are connected, and rapidly cooled by separating the chambers to move the substrate away from a heat storage portion of the heating device or the like. Further, the heat treatment method includes the heat treatment apparatus, and a method for manufacturing a semiconductor device using an oxide semiconductor is included.

Patent Claims
19 claims

Legal claims defining the scope of protection, as filed with the USPTO.

1

1. A heat treatment apparatus comprising: a first chamber of which one side is opened; a second chamber of which one side is opened; a device for moving at least one of the first chamber and the second chamber; a heating device provided in one of the first chamber and the second chamber; a non-contact-type holding means of a substrate, the non-contact-type holding means of a substrate provided in the other of the first chamber and the second chamber, a gas introduction port provided in at least one of the first chamber and the second chamber; and a gas exhaust port provided in at least one of the first chamber and the second chamber; wherein the open side of the first chamber and the open side of the second chamber face each other, and wherein the first chamber and the second chamber are configured to be connected to each other while a heat treatment is performed and separated from each other after performing the heat treatment.

2

2. The heat treatment apparatus according to claim 1 , wherein the heating device is selected from one of a resistance heater, a lamp heater, and a unit using a heated gas.

3

3. The heat treatment apparatus according to claim 1 , wherein the gas exhaust port is connected to a gas refining apparatus.

4

4. The heat treatment apparatus according to claim 1 , wherein the non-contact-type holding means of a substrate is a Bernoulli Chuck.

5

5. A heat treatment apparatus, comprising: a first chamber of which one side is opened; a second chamber of which one side is opened; a device for moving the first chamber and the second chamber; a heating device provided in one of the first chamber and the second chamber; a non-contact-type holding means of a substrate, the non-contact-type holding means of a substrate provided in the other of the first chamber and the second chamber; a gas introduction port; a gas exhaust port; and a third chamber in which the first chamber, the second chamber, the device for moving the first chamber and the second chamber, the heating device, the gas introduction port, the gas exhaust port and the non-contact-type holding means of a substrate are installed, wherein the open side of the first chamber and the open side of the second chamber face each other, wherein the first chamber and the second chamber are configured to be connected to each other while a heat treatment is performed and separated from each other after performing the heat treatment, and wherein the third chamber has an opening and closing apparatus.

6

6. The heat treatment apparatus according to claim 5 , wherein the heating device is selected from one of a resistance heater, a lamp heater, and a unit using a heated gas.

7

7. The heat treatment apparatus according to claim 5 , wherein the gas exhaust port is connected to a gas refining apparatus.

8

8. The heat treatment apparatus according to claim 5 , wherein the non-contact-type holding means of a substrate is a Bernoulli Chuck.

9

9. A heat treatment apparatus comprising: a first chamber of which one side is opened; a second chamber of which one side is opened; a jig for holding an end portion of a substrate, the jig provided between the first chamber and the second chamber; a device for moving at least one of the first chamber and the second chamber; a device for moving the jig for holding an end portion of a substrate, a heating device provided in at least one of the first chamber and the second chamber; a gas introduction port provided in at least one of the first chamber and the second chamber; and a gas exhaust port provided in at least one of the first chamber and the second chamber; wherein the jig for holding an end portion of a substrate is configured to hold the substrate while a heat treatment is performed, wherein the open side of the first chamber and the open side of the second chamber face each other, and wherein the first chamber and the second chamber are configured to be connected to each other while the heat treatment is performed and separated from each other after performing the heat treatment.

10

10. The heat treatment apparatus according to claim 9 , wherein the heating device is selected from one of a resistance heater, a lamp heater, and a unit using a heated gas.

11

11. The heat treatment apparatus according to claim 9 , wherein the gas exhaust port is connected to a gas refining apparatus.

12

12. The heat treatment apparatus according to claim 9 , wherein the jig for holding an end portion of a substrate has a function of holding a plurality of substrates in a stack with intervals.

13

13. A heat treatment apparatus, comprising: a first chamber of which one side is opened; a second chamber of which one side is opened; a jig for holding an end portion of a substrate, the jig provided between the first chamber and the second chamber; a device for moving at least one of the first chamber and the second chamber; a device for moving the jig for holding an end portion of a substrate; a heating device provided in at least one of the first chamber and the second chamber; a gas introduction port provided in at least one of the first chamber and the second chamber; a gas exhaust port provided in at least one of the first chamber and the second chamber; and a third chamber in which the first chamber, the second chamber, the device for moving at least one of the first chamber and the second chamber, the device for moving the jig for holding an end portion of a substrate, the heating device, the gas introduction port, the gas exhaust port and the jig for holding an end portion of a substrate are installed, wherein the jig for holding an end portion of a substrate is configured to hold the substrate while a heat treatment is performed, wherein the open side of the first chamber and the open side of the second chamber face each other, wherein the first chamber and the second chamber are configured to be connected to each other while the heat treatment is performed and separated from each other after performing the heat treatment, and wherein the third chamber has an opening and closing apparatus.

14

14. The heat treatment apparatus according to claim 13 , wherein the heating device is selected from one of a resistance heater, a lamp heater, and a unit using a heated gas.

15

15. The heat treatment apparatus according to claim 13 , wherein the gas exhaust port is connected to a gas refining apparatus.

16

16. The heat treatment apparatus according to claim 13 , wherein the jig for holding an end portion of a substrate has a function of holding a plurality of substrates in a stack with intervals.

17

17. A heat treatment apparatus comprising: a first chamber of which one side is opened; a second chamber of which one side is opened; a contact-type holding means of a substrate provided between the first chamber and the second chamber; a device for moving at least one of the first chamber and the second chamber; a heating device provided in at least one of the first chamber and the second chamber; a gas introduction port provided in at least one of the first chamber and the second chamber; and a gas exhaust port provided in at least one of the first chamber and the second chamber; wherein the contact-type holding means of a substrate is configured to hold the substrate during a heat treatment, wherein the open side of the first chamber and the open side of the second chamber face each other, and wherein the first chamber and the second chamber are configured to be connected to each other while the heat treatment is performed and separated from each other after performing the heat treatment.

18

18. The heat treatment apparatus according to claim 17 , wherein the heating device is selected from one of a resistance heater, a lamp heater, and a unit using a heated gas.

19

19. The heat treatment apparatus according to claim 17 , wherein the gas exhaust port is connected to a gas refining apparatus.

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Patent Metadata

Filing Date

September 23, 2010

Publication Date

May 14, 2013

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Cite as: Patentable. “Heat treatment apparatus, heat treatment method and method for manufacturing semiconductor device” (US-8440941). https://patentable.app/patents/US-8440941

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