Composition for antireflection film formation and method for resist pattern formation using the composition

1. A method for forming a resist pattern, the method comprising: forming a resist film on a substrate; forming an anti-reflection film on the resist film using a composition for forming an anti-reflection film; selectively irradiating the resist film, through the anti-reflection film, with light; and subjecting the irradiated resist film to a developing process, wherein the anti-reflection film is removed to obtain the resist pattern before subjecting the irradiated resist film to a developing process or during the developing process; and wherein the composition for forming an anti-reflection film comprises: 0.3% by mass to 10% by mass of a compound having a constituent unit represented by formula (1): wherein R 1 and R 2 each represent a direct bond or a methylene chain; R 3 and R 4 each represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH 2 ) n —O—R 5 —R 6 , wherein at least one of R 3 and R 4 is a group represented by —(CH 2 ) n —O—R 5 —R 6 ; R 5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R 6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; n represents an integer of 0 to 10; and a total number of carbon atoms present in R 1 and R 2 is 1 or 2, a nitrogen-containing compound, and water.

2. The method for forming a resist pattern according to claim 1 , wherein the compound having a constituent unit represented by formula (1) has a mass-average molecular weight of no less than 300 and no greater than 3,000.

3. The method for forming a resist pattern according to claim 1 , wherein the composition for forming an anti-reflection film further comprises at least one water soluble resin selected from the group consisting of a cellulosic polymer, an acrylic acid-based polymer, and a vinyl based polymer, wherein the acrylic acid-based polymer is a polymer containing at least one monomer selected from acrylamide, N,N-dimethylacrylamide, N,N-dimethylaminopropylmethacrylamide, N,N-dimethylaminopropylacrylamide, N-methylacrylamide, diacetoneacrylamide, N,N-dimethylaminoethyl methacrylate, N,N-diethylaminoethyl methacrylate, N,N-dimethylaminoethyl acrylate, acryloylmorpholine, hydroxyethyl acrylate and acrylic acid, and the vinyl based polymer is at least one selected from polyvinyl alcohol and polyvinylpyrrolidone.

4. The method for forming a resist pattern according to claim 1 , wherein the composition for forming an anti-reflection film further comprises a fluorochemical surfactant.

5. The method for forming a resist pattern according to claim 4 , wherein the fluorochemical surfactant is at least one selected from compounds represented by the following formulae (2) to (5) wherein r represents an integer of 10 to 15; s represents an integer of 1 to 5; t represents 2 or 3; u represents 2 or 3; R f represents a hydrogen atom or an alkyl group having 1 to 16 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and the alkyl group having 1 to 16 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom may have a hydroxy group, an alkoxyalkyl group, a carboxyl group, or an amino group.

6. The method for forming a resist pattern according to claim 1 , wherein the nitrogen-containing compound is at least one selected from the group consisting of a quaternary ammonium hydroxide, an alkanolamine compound, and an amino acid derivative.

7. The method for forming a resist pattern according to claim 6 , wherein the alkanolamine compound is at least one of 3-amino-1,2-propanediol and 2-amino-1,3-propanediol.