A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A magnetic junction for use in a magnetic memory device comprising: a first pinned layer having a first pinned layer magnetic moment and being nonmagnetic layer-free; a first nonmagnetic spacer layer; a free layer, the first nonmagnetic spacer layer residing between the first pinned layer and the free layer; a second nonmagnetic spacer layer, the free layer residing between the first nonmagnetic spacer layer and the second nonmagnetic spacer layer; and a second pinned layer having a second pinned layer magnetic moment and being nonmagnetic layer-free, the second nonmagnetic spacer layer residing between the free layer and the second pinned layer, the first pinned layer magnetic moment and the second pinned layer magnetic moment being self-pinned and magnetically coupled; wherein the magnetic junction is configured to allow the free layer to be switched between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
2. The magnetic junction of claim 1 wherein the first pinned layer magnetic moment and the second pinned layer magnetic moment are aligned antiparallel.
3. The magnetic junction of claim 2 wherein the first pinned layer magnetic moment and the second pinned layer magnetic moment being magnetically coupled includes an antiferromagnetic coupling.
4. The magnetic junction of claim 2 wherein the first pinned layer magnetic moment and the second pinned layer magnetic moment being magnetically coupled includes a magnetostatic coupling.
5. The magnetic junction of claim 2 wherein the first pinned layer magnetic moment and the second pinned layer magnetic moment are in-plane.
6. The magnetic junction of claim 1 wherein the first pinned layer magnetic moment and the second pinned layer magnetic moment are in-plane.
7. The magnetic junction of claim 1 wherein the first pinned layer magnetic moment and the second pinned layer magnetic moment being magnetically coupled includes an antiferromagnetic coupling.
8. The magnetic junction of claim 1 wherein the first pinned layer magnetic moment and the second pinned layer magnetic moment being magnetically coupled includes a magnetostatic coupling.
9. A magnetic memory comprising: a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one selection device and at least one magnetic junction, the at least one magnetic junction including a first pinned layer, a first nonmagnetic spacer layer, a free layer, a second nonmagnetic spacer layer, and a second pinned layer, the first pinned layer having a first pinned layer magnetic moment and being nonmagnetic layer-free, the first nonmagnetic spacer layer residing between the first pinned layer and the free layer, the free layer residing between the first nonmagnetic spacer layer and the second nonmagnetic spacer layer, the second pinned layer having a second pinned layer magnetic moment and being nonmagnetic layer-free, the second nonmagnetic spacer layer residing between the free layer and the second pinned layer, the first pinned layer magnetic moment and the second pinned layer magnetic moment being self-pinned and magnetically coupled, the magnetic junction being configured to allow the free layer to be switched between a plurality of stable magnetic states when a write current is passed through the magnetic junction; a plurality of bit lines coupled with the plurality of magnetic storage cells; and a plurality of word lines coupled with the plurality of magnetic storage cells.
10. The magnetic memory of claim 9 wherein the first pinned layer magnetic moment and the second pinned layer magnetic moment are aligned antiparallel.
11. The magnetic memory of claim 10 wherein the first pinned layer magnetic moment and the second pinned layer magnetic moment being magnetically coupled includes an antiferromagnetic coupling.
12. The magnetic memory of claim 10 wherein the first pinned layer magnetic moment and the second pinned layer magnetic moment being magnetically coupled includes a magnetostatic coupling.
13. The magnetic memory of claim 10 wherein the first pinned layer magnetic moment and the second pinned layer magnetic moment are in-plane.
14. The magnetic memory of claim 9 wherein the first pinned layer magnetic moment and the second pinned layer magnetic moment are in-plane.
15. The magnetic memory of claim 9 wherein the first pinned layer magnetic moment and the second pinned layer magnetic moment being magnetically coupled includes an antiferromagnetic coupling.
16. The magnetic memory of claim 9 wherein the first pinned layer magnetic moment and the second pinned layer magnetic moment being magnetically coupled includes a magnetostatic coupling.
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March 8, 2012
June 4, 2013
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