A method for processing a sample using an electrically neutral reactive cluster is provided. The surface of a sample is processed by jetting out a mixed gas that is composed of a reactive gas and a gas with a boiling point lower than that of the reactive gas from a gas jetting part of a vacuum process room in which the sample is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the sample in the vacuum process room.
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1. A cluster jet processing method comprising: placing a sample in a vacuum process room provided with a gas jetting part for jetting out a gas into the vacuum process room; and processing a surface of the sample by jetting out a mixed gas composed of a reactive gas and a gas having a boiling point lower than that of the reactive gas from the gas jetting part by a pressure in a range in which liquefaction of the mixed gas is not caused, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the sample.
A method for processing a sample surface in a vacuum chamber using a cluster jet. The method involves introducing a mixed gas composed of a reactive gas (e.g., for etching) and a carrier gas with a lower boiling point into the chamber. This mixed gas is then forced through a nozzle at a pressure that prevents it from liquefying. As the gas expands adiabatically upon exiting the nozzle, it forms reactive clusters. These clusters are then directed towards the sample surface to perform the desired processing, such as etching or surface modification.
2. The cluster jet processing method according to claim 1 , wherein the reactive gas is an interhalogen compound gas or a hydrogen halide gas.
The cluster jet processing method involves using an interhalogen compound gas (e.g., iodine monochloride) or a hydrogen halide gas (e.g., hydrogen fluoride) as the reactive gas within the mixed gas. The mixed gas composed of the reactive gas and a carrier gas with a lower boiling point is forced through a nozzle at a pressure that prevents it from liquefying. As the gas expands adiabatically upon exiting the nozzle, it forms reactive clusters. These clusters are then directed towards the sample surface to perform the desired processing.
3. The cluster jet processing method according to claim 2 , wherein the sample is made of a semiconductor material or a metal material.
The cluster jet processing method, where an interhalogen compound gas or a hydrogen halide gas is used as the reactive gas, involves processing a sample made of a semiconductor material (e.g., silicon) or a metal material (e.g. aluminum). The mixed gas composed of the reactive gas and a carrier gas with a lower boiling point is forced through a nozzle at a pressure that prevents it from liquefying. As the gas expands adiabatically upon exiting the nozzle, it forms reactive clusters. These clusters are then directed towards the sample surface to perform the desired processing.
4. The cluster jet processing method according to claim 1 , wherein the sample is made of a semiconductor material or a metal material.
The cluster jet processing method involves processing a sample made of a semiconductor material (e.g., silicon) or a metal material (e.g. aluminum). The mixed gas composed of the reactive gas and a carrier gas with a lower boiling point is forced through a nozzle at a pressure that prevents it from liquefying. As the gas expands adiabatically upon exiting the nozzle, it forms reactive clusters. These clusters are then directed towards the sample surface to perform the desired processing.
5. The cluster jet processing method according to claim 1 , wherein in the processing, a pattern is formed on the surface of the sample using one or more of a photorersist, a silicon oxide film, a silicon nitride film, and a silicon oxynitride film, and the surface of the sample is processed using the pattern as a mask.
The cluster jet processing method further refines the sample processing by first creating a pattern on the sample surface using a masking material. This mask can be a photoresist, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film. The reactive cluster jet is then used to selectively process the exposed areas of the sample surface, using the mask to define the pattern. The mixed gas composed of the reactive gas and a carrier gas with a lower boiling point is forced through a nozzle at a pressure that prevents it from liquefying. As the gas expands adiabatically upon exiting the nozzle, it forms reactive clusters.
6. The cluster jet processing method according to claim 1 , wherein in the processing, a pattern is formed on the surface of the sample using a metal material that is resistant to hydrogen halide, and the surface of the sample is processed using the pattern as a mask.
The cluster jet processing method further refines the sample processing by first creating a pattern on the sample surface using a metal material resistant to hydrogen halide. The metal acts as a mask during the reactive cluster jet processing, selectively exposing areas for etching or modification. The mixed gas composed of the reactive gas and a carrier gas with a lower boiling point is forced through a nozzle at a pressure that prevents it from liquefying. As the gas expands adiabatically upon exiting the nozzle, it forms reactive clusters.
7. The cluster jet processing method according to claim 1 , wherein in the processing, the surface of the sample is obliquely processed by jetting the reactive cluster in an oblique direction relative to the surface of the sample.
In the cluster jet processing method, the reactive cluster jet is directed at an oblique angle relative to the sample surface. This angled jetting allows for anisotropic processing, enabling features like sidewall etching or angled deposition. The mixed gas composed of the reactive gas and a carrier gas with a lower boiling point is forced through a nozzle at a pressure that prevents it from liquefying. As the gas expands adiabatically upon exiting the nozzle, it forms reactive clusters.
8. The cluster jet processing method according to claim 1 , wherein in the processing, the surface of the sample is processed so as to be flattened by moving the gas jetting part or the sample.
In the cluster jet processing method, the sample surface is flattened by moving either the gas jetting part or the sample itself during the cluster jet processing. This movement ensures uniform exposure to the reactive clusters across the entire surface, leading to a planarized surface finish. The mixed gas composed of the reactive gas and a carrier gas with a lower boiling point is forced through a nozzle at a pressure that prevents it from liquefying. As the gas expands adiabatically upon exiting the nozzle, it forms reactive clusters.
9. The cluster jet processing method according to claim 1 , wherein in the processing, the surface of the sample is processed such that straight line and curved line processing and/or large area processing are carried out by moving the gas jetting part or the sample.
The cluster jet processing method allows for creating various surface structures by moving the gas jetting part or the sample. This movement enables straight line processing, curved line processing, and large area processing. Precise control over the movement allows for intricate patterns and uniform treatment across large surfaces. The mixed gas composed of the reactive gas and a carrier gas with a lower boiling point is forced through a nozzle at a pressure that prevents it from liquefying. As the gas expands adiabatically upon exiting the nozzle, it forms reactive clusters.
10. The cluster jet processing method according to claim 1 , wherein in the processing, the surface of the sample is processed such that a penetration hole is formed in the sample.
The cluster jet processing method can be used to create through-holes in the sample. By focusing the reactive cluster jet and controlling the processing time, a hole can be etched completely through the sample. The mixed gas composed of the reactive gas and a carrier gas with a lower boiling point is forced through a nozzle at a pressure that prevents it from liquefying. As the gas expands adiabatically upon exiting the nozzle, it forms reactive clusters.
11. The cluster jet processing method according to claim 1 , wherein in the processing, the surface of the sample is processed after removing a natural oxide film on the surface of the sample.
The cluster jet processing method includes a pre-cleaning step to remove the natural oxide film from the sample surface before the main processing step. This ensures a clean and reactive surface for the cluster jet processing. The mixed gas composed of the reactive gas and a carrier gas with a lower boiling point is forced through a nozzle at a pressure that prevents it from liquefying. As the gas expands adiabatically upon exiting the nozzle, it forms reactive clusters.
12. The cluster jet processing method according to claim 1 , wherein the vacuum process room is provided with a plurality of gas jetting parts each for jetting out the mixed gas, and wherein in the processing, the surface of the sample is processed by carrying out one method or more methods concurrently, selected from a method of jetting out the mixed gas from each of the plurality of gas jetting parts in substantially the same direction and jetting each generated reactive cluster against the sample, a method of jetting out the mixed gas from each of the plurality of gas jetting parts in different directions from each other and jetting each generated reactive cluster against the sample, and a method of jetting out the mixed gas from each of the plurality of gas jetting parts with flow rates of the mixed gas jetted out from respective gas jetting parts and pressures by which the mixed gas is jetted out from respective gas jetting parts made substantially the same or individually controlled and jetting each generated reactive cluster against the sample.
The cluster jet processing method uses multiple gas jetting parts within the vacuum chamber. These jets can be configured to jet the mixed gas in the same direction, in different directions, or with independently controlled flow rates and pressures. This allows for complex and tailored processing of the sample surface. The mixed gas composed of the reactive gas and a carrier gas with a lower boiling point is forced through a nozzle at a pressure that prevents it from liquefying. As the gas expands adiabatically upon exiting the nozzle, it forms reactive clusters.
13. A semiconductor element comprising: a semiconductor substrate etched by jetting out a mixed gas composed of a reactive gas and a gas having a boiling point lower than that of the reactive gas from a gas jetting part provided in a vacuum process room in which the semiconductor substrate is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the semiconductor substrate in the vacuum process room; and a base on which the semiconductor substrate is formed.
A semiconductor element created using a cluster jet etching process. A semiconductor substrate is etched by directing reactive clusters onto its surface within a vacuum chamber. These clusters are generated by jetting a mixture of reactive and carrier gases through a nozzle. The semiconductor substrate formed by this process is then attached to a base. The mixed gas is composed of the reactive gas and a carrier gas with a lower boiling point and is forced through a nozzle at a pressure that prevents it from liquefying. As the gas expands adiabatically upon exiting the nozzle, it forms reactive clusters.
14. A micro electro mechanical system element comprising: a sensor; and a substrate on which the sensor is formed, the substrate etched by jetting out a mixed gas composed of a reactive gas and a gas having a boiling point lower than that of the reactive gas from a gas jetting part provided in a vacuum process room in which the substrate is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the substrate in the vacuum process room.
A microelectromechanical system (MEMS) element that includes a sensor fabricated on a substrate. The substrate is etched using a cluster jet process, where reactive clusters are directed onto the substrate surface in a vacuum chamber. These clusters are generated by expanding a mixture of reactive and carrier gases through a nozzle. The mixed gas is composed of the reactive gas and a carrier gas with a lower boiling point and is forced through a nozzle at a pressure that prevents it from liquefying. As the gas expands adiabatically upon exiting the nozzle, it forms reactive clusters.
15. An optical component comprising: a substrate; and an optical pattern on the substrate, the optical pattern formed by jetting out a mixed gas composed of a reactive gas and a gas having a boiling point lower than that of the reactive gas from a gas jetting part provided in a vacuum process room in which the substrate is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the substrate in the vacuum process room.
An optical component comprised of a substrate with an optical pattern. The pattern is formed by etching the substrate using a cluster jet process. Reactive clusters, generated by expanding a mixture of reactive and carrier gases through a nozzle in a vacuum chamber, are directed onto the substrate to create the desired optical pattern. The mixed gas is composed of the reactive gas and a carrier gas with a lower boiling point and is forced through a nozzle at a pressure that prevents it from liquefying. As the gas expands adiabatically upon exiting the nozzle, it forms reactive clusters.
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August 10, 2009
June 11, 2013
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