A method of manufacturing an SiC semiconductor device according to the present invention includes the steps of (a) by using a single mask, etching regions of an SiC semiconductor layer which serve as an impurities implantation region and a mark region, to form recesses, (b) by using the same mask as in the step (a), performing ion-implantation in the recesses of the regions which serve as the impurities implantation region and the mark region, at least from an oblique direction relative to a surface of the SiC semiconductor layer and (c) positioning another mask based on the recess of the region which serves as the impurities implantation region or the mark region, and performing well implantation in a region containing the impurities implantation region.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device comprising: an SiC semiconductor layer; a well region selectively formed on a surface of said SiC semiconductor layer; and an impurities implantation region selectively formed on a surface of said well region, wherein said impurities implantation region has a recess formed in a region thereof except a region near an end portion on a surface of said impurities implantation region, and said region near the end portion has a hook-like shape curving toward an upper face of said semiconductor layer.
2. The SiC semiconductor device according to claim 1 , wherein an end face of said impurities implantation region has a tapered shape.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
October 25, 2010
June 11, 2013
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