A method of manufacturing an SiC semiconductor device according to the present invention includes the steps of (a) by using a single mask, etching regions of an SiC semiconductor layer which serve as an impurities implantation region and a mark region, to form recesses, (b) by using the same mask as in the step (a), performing ion-implantation in the recesses of the regions which serve as the impurities implantation region and the mark region, at least from an oblique direction relative to a surface of the SiC semiconductor layer and (c) positioning another mask based on the recess of the region which serves as the impurities implantation region or the mark region, and performing well implantation in a region containing the impurities implantation region.
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1. A semiconductor device comprising: an SiC semiconductor layer; a well region selectively formed on a surface of said SiC semiconductor layer; and an impurities implantation region selectively formed on a surface of said well region, wherein said impurities implantation region has a recess formed in a region thereof except a region near an end portion on a surface of said impurities implantation region, and said region near the end portion has a hook-like shape curving toward an upper face of said semiconductor layer.
This semiconductor device uses a silicon carbide (SiC) layer as its base. A well region is selectively created on the surface of the SiC layer. An impurity implantation region is then selectively formed on the surface of the well region. This impurity implantation region has a recess etched into its surface, except for a small section at the edge. That edge section is shaped like a hook, curving upwards towards the SiC layer's surface. The hook helps to optimize electrical field distribution and enhance device performance.
2. The SiC semiconductor device according to claim 1 , wherein an end face of said impurities implantation region has a tapered shape.
Building upon the structure described in the previous semiconductor device, the end of the impurity implantation region is tapered. This tapering ensures a gradual change in doping concentration at the edge of the region. This gradual transition reduces the peak electric field concentration at the corner, thus minimizing the risk of device breakdown and improving the overall robustness and reliability of the silicon carbide (SiC) semiconductor device. This tapered shape is in addition to the hook-like shape previously mentioned.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
October 25, 2010
June 11, 2013
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