A monolithic microwave integrated circuit (MMIC) includes a transistor, coupled line and multiple air bridges. The coupled line is configured to output a coupled signal from the transistor, the coupled line running parallel to a drain of the transistor. The air bridges connect the drain of the transistor with a bond pad for outputting a transistor output signal, the bridges being arranged parallel to one another and extending over the coupled line. The air bridges and the coupled line effectively provide coupling of the transistor output signal to a load.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A monolithic microwave integrated circuit (MMIC), comprising: a transistor; a coupled line configured to output a coupled signal from the transistor, the coupled line running parallel to a drain of the transistor; and a plurality of air bridges electrically connecting the drain of the transistor with a bond pad for outputting a transistor output signal to a load, the plurality of air bridges being arranged parallel to one another and extending over the coupled line for providing the coupled signal to the coupled line by coupling the transistor output signal.
2. The MMIC of claim 1 , wherein the plurality of air bridges and the coupled line form a distributed capacitor running a length of the drain of the transistor.
3. The MMIC of claim 1 , wherein the coupling occurs at a first level metallization in the MMIC.
4. The MMIC of claim 1 , wherein increasing the number of air bridges of the plurality of air bridges increases a coupling coefficient of the coupling.
5. The MMIC of claim 1 , wherein increasing a width of the coupled line increases a coupling coefficient of the coupling.
6. The MMIC of claim 1 , wherein decreasing a distance between the coupled line and one of metallization of the drain or metallization of the bond pad increases a coupling coefficient of the coupling.
7. The MMIC of claim 1 , wherein decreasing a distance between the coupled line and the plurality of air bridges increases a coupling coefficient of the coupling.
8. A monolithic microwave integrated circuit (MMIC), comprising: a multi-stage amplifier comprising a final stage and at least one previous stage; a first coupled line at the final stage of the multi-stage amplifier configured to provide a first coupled signal; and a plurality of first air bridges electrically connecting an output of the final stage to a bond pad for outputting a radio frequency (RF) signal from the of the multi-stage amplifier to a load, the plurality of first air bridges extending over the first coupled line for providing the first coupled signal to the first coupled line from the RF signal output from the multi-stage amplifier to.
9. The MMIC of claim 8 , wherein the first coupled line is connected to an output detector configured to determine a power level of the RF signal output by the multi-stage amplifier.
10. The MMIC of claim 8 , wherein the first coupled line is connected to a feedback network leading to a signal processing circuit comprising the at least one previous stage for providing a feedback signal to the at least one previous stage.
11. The MMIC of claim 8 , wherein the first coupled line is connected to an input of another amplifier for driving the other amplifier.
12. The MMIC of claim 8 , further comprising: a second coupled line at the final stage of the multi-stage amplifier configured to provide a second coupled signal, wherein the second coupled line runs parallel to the first coupled line and the plurality of first air bridges also extends over the second coupled lines for providing the second coupled signal to the second coupled line.
13. The MMIC of claim 12 , wherein the first coupled line is connected to an output detector configured to determine a power level of the RF signal output by the multi-stage amplifier based on the first coupled signal, and wherein the second coupled line is connected to a feedback network leading to a signal processing circuit comprising the at least one previous stage for providing a feedback signal to the at least one previous stage based on the second coupled signal.
14. The MMIC of claim 8 , further comprising: a second coupled line at the at least one previous stage of the multi-stage amplifier configured to provide a second coupled signal; and a plurality of second air bridges connecting an output of the at least one previous stage to an input of the final stage of the multi-stage amplifier, the plurality of second air bridges extending over the second coupled line.
15. The MMIC of claim 14 , wherein the second coupled line is connected to an output detector configured to determine a power level of a signal output by the at least one previous stage of the multi-stage amplifier.
16. A coupling device, included in a monolithic microwave integrated circuit (MMIC), for coupling a power amplifier with a load, the coupling device comprising: a coupled line configured to provide a coupled signal from a transistor included in the power amplifier; and a plurality of air bridges connecting one of a drain or a collector of the transistor with a bond pad for outputting a radio frequency (RF) signal from the power amplifier to a load, the plurality of air bridges extending over the coupled line for providing the coupled signal to the coupled line.
17. The coupling device of claim 16 , wherein the coupled line comprises a plurality of coupled ports, at least one coupled port being connected to an output detector.
18. The coupling device of claim 17 , wherein the output detector is configured to sample power output by the transistor across an entire length of the drain or collector via the coupled line, and to convert the sampled output power to a DC signal.
19. The coupling device of claim 16 , wherein a coupling coefficient is controllable by adjusting a number of air bridges in the plurality of air bridges.
20. The coupling device of claim 16 , wherein a coupling coefficient is controllable by adjusting a distance of the coupled line from at least one of the plurality of air bridges, the drain or collector of the transistor, and the bond pad.
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August 18, 2011
June 11, 2013
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