Optical oscillation device and recording apparatus

1. A recording apparatus comprising: a self-excited oscillation semiconductor laser that has a double quantum well separate confinement heterostructure and includes a saturable absorber section to which a negative bias voltage is applied and a gain section into which a gain current is injected; an optical separation unit that separates an oscillated light beam from the self-excited oscillation semiconductor laser into two oscillated light beams; an objective lens that condenses one of the separated oscillated light beams on an optical recording medium; a light reception element that receives the one of the oscillated light beams separated by the optical separation unit; a pulse detection unit that detects a pulse of the oscillated light beam received by the light reception element; a reference signal generation unit that generates a master clock signal; a phase comparison unit that calculates a phase difference between the master clock signal and the pulse; a recording signal generation unit that generates a recording signal using a negative voltage at a timing of the master clock signal; and a control unit that controls the negative bias voltage to be applied to the saturable absorber section based on the recording signal and that outputs a direct current voltage during a non-oscillation period of the self-excited oscillation semiconductor laser and outputs a period voltage changed at a desired period during an oscillation period of the self-excited oscillation semiconductor laser; wherein the control unit controls the gain current to be injected into the gain section of the self-excited oscillation semiconductor laser based on the phase difference and adjusts an interval of the pulse during the oscillation period.

2. The recording apparatus according to claim 1 , wherein the self-excited oscillation semiconductor laser includes an active layer, a GaInN guide layer, a p-type AlGaN barrier layer, a p-type GaN/AlGaN superlattice first-clad layer, and a p-type GaN/AlGaN superlattice second-clad layer, and the GaInN guide layer, the p-type AlGaN barrier layer, the p-type GaN/AlGaN superlattice first-clad layer, and the p-type GaN/AlGaN superlattice second-clad layer are sequentially laminated on one surface of the active layer.

3. The recording apparatus according to claim 2 , wherein the self-excited oscillation semiconductor laser includes an n-type GaN guide layer, an n-type AlGaN clad layer, and an n-type GaN layer that are sequentially formed on the other surface of the active layer.

4. An optical oscillation device comprising: a self-excited oscillation semiconductor laser that has a double quantum well separate confinement heterostructure and includes a saturable absorber section to which a negative bias voltage is applied and a gain section into which a gain current is injected; an optical separation unit that separates an oscillated light beam from the self-excited oscillation semiconductor laser; a light reception element that receives one of the oscillated light beams separated by the optical separation unit; a pulse detection unit that detects a pulse of the oscillated light beam received by the light reception element; a reference signal generation unit that generates a master clock signal; a phase comparison unit that calculates a phase difference between the master clock signal and the pulse; a signal generation unit that generates a predetermined signal using a negative voltage at a timing of the master clock signal; and a control unit that controls the negative bias voltage to be applied to the saturable absorber section based on the signal and that outputs a direct current voltage during a non-oscillation period of the self-excited oscillation semiconductor laser and outputs a period voltage changed at a desired period during an oscillation period of the self-excited oscillation semiconductor laser; and wherein the control unit controls the gain current to be injected into the gain section of the self-excited oscillation semiconductor laser based on the phase difference and adjusts an amplitude of the pulse within the oscillation period.