A layout method for a bridging electrode capable of shielding a bright spot includes the steps of: providing a substrate; forming a transparent electroconductive layer, having neighboring pattern blocks, on the substrate; forming an alignment film layer, having bridging grooves for crossing between the pattern blocks, over the substrate; forming an electroconductive layer, having wires respectively correspondingly disposed over the bridging grooves, over the substrate; forming an electroconductive correspondence layer on one side of the electroconductive layer to shield the wires; and forming a protection layer over the substrate to enhance optical transmission and protect the substrate, the transparent electroconductive layer, the alignment film layer and the electroconductive layer. Meanwhile, the invention also provides a structure of the bridging electrode capable of shielding the bright spot and corresponding to the layout method.
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1. A layout method for a bridging electrode capable of shielding a bright spot, the method comprising the steps of: providing a substrate; forming a transparent electroconductive layer over the substrate, wherein the transparent electroconductive layer has a plurality of neighboring pattern blocks; forming an alignment film layer over the substrate, wherein the alignment film layer has a plurality of bridging grooves crossing between the pattern blocks; forming an electroconductive layer over the substrate, wherein the electroconductive layer has a plurality of wires respectively correspondingly disposed over the bridging grooves; forming an electroconductive correspondence layer on one side of the electroconductive layer to shield the wires; and forming a protection layer over the substrate to enhance a ratio of optical transmission and protect the substrate, the transparent electroconductive layer, the alignment film layer and the electroconductive layer.
A method for creating a bridging electrode that reduces bright spots in a device, such as a touch screen. The method involves: starting with a substrate; creating a transparent, conductive layer with separate pattern blocks on top of it; adding an alignment film with grooves that cross between the pattern blocks; depositing conductive wires over the grooves; placing a conductive layer on one side of the wires to shield them; and applying a protective layer to improve light transmission and safeguard the underlying layers (substrate, transparent conductive layer, alignment film, and conductive layer).
2. The layout method according to claim 1 , wherein the wires of the electroconductive layer are formed through an optically compensated mask in conjunction with at least one of over exposure and over development.
The bridging electrode layout method described previously, where the wires are formed using a special mask (optically compensated) along with carefully controlled overexposure or overdevelopment during the manufacturing process. This aims to create precise wire dimensions.
3. The layout method according to claim 2 , wherein the step of forming the alignment film layer further comprises: applying a first photoresist over the substrate; providing a mask, having a pattern, or a mask, having a half tone pattern, and exposing the pattern or the half tone pattern onto the first photoresist through the mask; developing the pattern or the half tone pattern onto the first photoresist to form the bridging grooves crossing between the pattern blocks; and baking the first photoresist.
In the bridging electrode layout method where the alignment film layer has grooves, forming the grooves involves: coating the substrate with a first photoresist; using a patterned mask (either a standard pattern or a half-tone pattern) to expose the photoresist; developing the exposed photoresist to create the bridging grooves that connect the pattern blocks; and then baking the photoresist to harden it.
4. The layout method according to claim 3 , wherein the step of forming the electroconductive layer further comprises: sputtering an electroconductive material over the substrate; applying a second photoresist over the substrate; providing the optically compensated mask, and over exposing a wire pattern corresponding to the wires onto the second photoresist through the optically compensated mask; and developing the wire pattern to form the neighboring pattern blocks, wherein the wire pattern is formed by way of over exposure and over development.
In the bridging electrode layout method with alignment film grooves, and where the wires are created using an optically compensated mask with overexposure/overdevelopment, the conductive layer is formed by: sputtering a conductive material onto the substrate; coating with a second photoresist; using the optically compensated mask to overexpose a wire pattern onto the photoresist; and developing the photoresist to form the desired wire pattern, achieving the final shape through overexposure and overdevelopment.
5. The layout method according to claim 4 , wherein the step of forming the electroconductive correspondence layer further comprises: sputtering an electroconductive material over the substrate; applying a third photoresist over the substrate; providing the optically compensated mask, and over exposing a corresponding wire pattern, corresponding to the wires, onto the third photoresist through the optically compensated mask; and developing and stripping the corresponding wire pattern, applying a fourth photoresist and utilizing the mask of the wires to form an electroconductive correspondence layer pattern shielding the wire pattern.
In the bridging electrode layout method using overexposure/overdevelopment to define wires, forming the shielding layer involves: sputtering a conductive material; applying a third photoresist; using the optically compensated mask to overexpose a pattern matching the wires; developing and removing the exposed photoresist; applying a fourth photoresist and using the original wire mask to define the shielding layer that covers the wires.
6. The layout method according to claim 5 , wherein the step of forming the protection layer comprises: applying/sputtering a fifth photoresist or an organic material over the substrate; and baking the fifth photoresist or the organic material to forming a hard protection film.
In the bridging electrode layout method, forming the protective layer involves: coating the substrate with either a fifth layer of photoresist or an organic material, using either application or sputtering; and then baking the applied material to create a hard, protective film.
7. The layout method according to claim 4 , wherein the step of forming the electroconductive correspondence layer further comprises: sputtering an electroconductive material over the substrate; applying a colored photoresist over the substrate; providing the optically compensated mask, and over exposing a corresponding wire pattern, corresponding to the wires, onto the colored photoresist through the optically compensated mask; and developing and not stripping the corresponding wire pattern on the colored photoresist to form an electroconductive correspondence layer pattern shielding the wire pattern.
In the bridging electrode layout method using overexposure/overdevelopment to define wires, an alternative method for forming the shielding layer involves: sputtering a conductive material; applying a *colored* photoresist; using the optically compensated mask to overexpose a pattern matching the wires; and developing the colored photoresist *without* removing it, leaving the colored photoresist in place to shield the wires.
8. The layout method according to claim 7 , wherein the step of forming the protection layer comprises: applying/sputtering a fifth photoresist or an organic material over the substrate; and baking the fifth photoresist or the organic material to forming a hard protection film.
In the bridging electrode layout method where the shielding layer is formed using colored photoresist that remains in place, forming the protective layer involves: coating the substrate with either a fifth layer of photoresist or an organic material using either application or sputtering; and then baking the applied material to create a hard, protective film.
9. The layout method according to claim 4 , wherein the step of forming the electroconductive correspondence layer further comprises: applying a colored photoresist onto a wire pattern through screen printing or a mask having the wire pattern to form an electroconductive correspondence layer pattern shielding the wire pattern.
In the bridging electrode layout method using overexposure/overdevelopment to define wires, another method for forming the shielding layer involves: applying a colored photoresist directly onto the wire pattern using either screen printing or a mask that replicates the wire pattern, leaving the colored photoresist in place to shield the wires.
10. The layout method according to claim 9 , wherein the step of forming the protection layer comprises: applying/sputtering a fifth photoresist or an organic material over the substrate; and baking the fifth photoresist or the organic material to forming a hard protection film.
In the bridging electrode layout method where the shielding layer is formed using colored photoresist applied via screen printing, forming the protective layer involves: coating the substrate with either a fifth layer of photoresist or an organic material using either application or sputtering; and then baking the applied material to create a hard, protective film.
11. A structure of a bridging electrode capable of shielding a bright spot and being used in a capacitive touch panel, the structure comprising: a substrate; a plurality of first electrode blocks disposed on the substrate and electrically connected together in series through a first wire; a plurality of second electrode blocks disposed on the substrate and on two sides of the first wire; a bridging insulation unit vertically disposed on the first wire and having a bridging groove, wherein a height of the bridging groove is lower than a height of the bridging insulation unit; and a plurality of electrode correspondence blocks for shielding the first electrode blocks and/or the second electrode blocks; wherein the second electrode blocks are electrically connected together in series through the bridging insulation unit having a second wire.
A structure for a bridging electrode, used in capacitive touch panels, designed to minimize bright spots. It includes: a substrate; multiple first electrode blocks connected in series by a first wire; second electrode blocks positioned on either side of the first wire; an insulating layer with a groove above the first wire (the groove's height is less than the insulator's); and electrode correspondence blocks to shield the first and/or second electrode blocks; where the second electrode blocks are electrically connected in series through a second wire within the bridging insulation unit.
12. The structure according to claim 11 , wherein the electrode correspondence blocks are made of a colored photoresist.
The bridging electrode structure designed to minimize bright spots, where the shielding (electrode correspondence) blocks are made of colored photoresist.
13. A structure of a bridging electrode capable of shielding a bright spot and being used in a capacitive touch panel, the structure comprising: a substrate layer; a transparent electroconductive layer disposed on at least one side of the substrate layer; an alignment film layer disposed on one side of the substrate layer; an electroconductive layer adjacently disposed on one side of the alignment film layer; an electroconductive correspondence layer, disposed on one side of the electroconductive layer, for shielding the electroconductive layer; and a protection layer disposed on one side of the electroconductive correspondence layer.
A bridging electrode structure designed to minimize bright spots, for use in capacitive touch panels, which comprises: a substrate layer; a transparent conductive layer on at least one side; an alignment film layer on one side of the substrate; a conductive layer next to the alignment film; a conductive shielding layer to shield the conductive layer; and a protective layer on top of the shielding layer.
14. The structure according to claim 13 , wherein the electroconductive correspondence layer is disposed between the electroconductive layer and the protection layer.
The bridging electrode structure, where the conductive shielding layer is positioned between the conductive layer and the protective layer.
15. The structure according to claim 13 , wherein the electroconductive correspondence layer is disposed between the electroconductive layer and the transparent electroconductive layer.
The bridging electrode structure, where the conductive shielding layer is positioned between the conductive layer and the transparent conductive layer.
16. The structure according to claim 15 , wherein a length of the electroconductive layer is longer than a length of the electroconductive correspondence layer.
The bridging electrode structure where the conductive shielding layer is between the conductive layer and the transparent conductive layer, and where the conductive layer is longer than the conductive shielding layer.
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November 12, 2010
June 25, 2013
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