A semiconductor switching device includes a power control part, which includes a voltage dropping chopper circuit having a first switching element and a first diode, a voltage boosting chopper circuit having a second switching element and a second diode, and an inductance. And the inductance is connected such that an unusual current caused by the arm short circuit is forced to pass through the inductance.
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1. A semiconductor switching device comprising: a voltage dropping chopper circuit which includes a switching element, a diode, and a free wheeling diode whose cathode is connected to a cathode of the diode via a first inductance and whose anode is connected to a anode of the diode via a second inductance; wherein a first end of the switching element is connected to a high voltage side, a second end of the switching element is connected to a cathode of the diode, an anode of the diode is connected to a low voltage side, the second end of the switching element is connected to a load, and the load is connected to the low voltage side.
A semiconductor switching device designed to handle large currents and prevent damage from short circuits. It features a voltage dropping (buck) chopper circuit. This circuit includes a switching element (like a transistor), a diode, and a free-wheeling diode. The free-wheeling diode's cathode is connected to the main diode's cathode through a first inductor, and its anode to the main diode's anode through a second inductor. The switching element connects to a high voltage source on one side and the diode's cathode on the other. The diode's anode connects to the low voltage side. The load (the device being powered) connects between the switching element and the low voltage side. This configuration uses the inductors to manage current flow during short circuits and switching, improving the device's robustness.
2. The semiconductor switching device as claimed in claim 1 , wherein the switching element or the diode is made of SiC.
The semiconductor switching device, as described in the previous buck converter design, uses silicon carbide (SiC) for either the main switching element or the diode. Using SiC improves the device's high-voltage and high-temperature performance, allowing for faster switching speeds and reduced energy loss compared to traditional silicon-based devices. SiC enhances the device's overall efficiency and reliability in high-power applications by enabling it to withstand higher voltages and temperatures.
3. A semiconductor switching device comprising: a voltage boosting circuit which includes a switching element, a diode, and a free wheeling diode whose cathode is connected to a cathode of the diode via a first inductance and whose anode is connected to a anode of the diode via a second inductance; wherein the cathode of the diode is connected to a high voltage side, the anode of the diode is connected to a first end of the switching element, a second end of the switching element is connected to a low voltage side, the first end of the switching element is connected to a load, and the load is connected to the high voltage side.
A semiconductor switching device featuring a voltage boosting (boost) circuit designed to handle large currents and prevent short circuit damage. The boosting circuit comprises a switching element, a diode, and a free-wheeling diode. The free-wheeling diode's cathode is connected to the main diode's cathode via a first inductor, and its anode is connected to the main diode's anode via a second inductor. The diode's cathode is connected to a high voltage side, and the diode's anode is connected to one side of the switching element. The other side of the switching element is connected to the low voltage side. A load connects between the switching element and the high voltage side. This arrangement utilizes the inductors to control current flow during switching transitions and short-circuit events.
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December 31, 2009
June 25, 2013
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