A semiconductor switching device includes a power control part, which includes a voltage dropping chopper circuit having a first switching element and a first diode, a voltage boosting chopper circuit having a second switching element and a second diode, and an inductance. And the inductance is connected such that an unusual current caused by the arm short circuit is forced to pass through the inductance.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor switching device comprising: a voltage dropping chopper circuit which includes a switching element, a diode, and a free wheeling diode whose cathode is connected to a cathode of the diode via a first inductance and whose anode is connected to a anode of the diode via a second inductance; wherein a first end of the switching element is connected to a high voltage side, a second end of the switching element is connected to a cathode of the diode, an anode of the diode is connected to a low voltage side, the second end of the switching element is connected to a load, and the load is connected to the low voltage side.
2. The semiconductor switching device as claimed in claim 1 , wherein the switching element or the diode is made of SiC.
3. A semiconductor switching device comprising: a voltage boosting circuit which includes a switching element, a diode, and a free wheeling diode whose cathode is connected to a cathode of the diode via a first inductance and whose anode is connected to a anode of the diode via a second inductance; wherein the cathode of the diode is connected to a high voltage side, the anode of the diode is connected to a first end of the switching element, a second end of the switching element is connected to a low voltage side, the first end of the switching element is connected to a load, and the load is connected to the high voltage side.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
December 31, 2009
June 25, 2013
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