A substrate processing method is used for a substrate processing system having a substrate processing device and a substrate transfer device. The substrate processing method includes a substrate transfer step of transferring a substrate and a substrate processing step of performing a predetermined process on the substrate. The substrate transfer step and the substrate processing step include a plurality of operations, and at least two operations among the plurality of the operations are performed simultaneously. Preferably, the substrate processing device includes an accommodating chamber, a mounting table placed in the accommodating chamber to be mounted thereon the substrate, and a heat transfer gas supply line for supplying a heat transfer gas to a space between the substrate mounted on the mounting table and the mounting table.
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1. A substrate processing system comprising: an atmospheric transfer unit for transferring a substrate to be processed; an accommodating chamber for accommodating therein the substrate and decreasing a pressure therein; a mounting table placed in the accommodating chamber for mounting thereon the substrate; a high-frequency power supply for supplying a high-frequency power to the mounting table; a heat-transfer gas supply line for supplying a heat-transfer gas to a space between the substrate mounted on the mounting table and the mounting table; elevation pins protruded from the mounting table to move up and down the substrate; a pressure control unit for controlling a pressure in the accommodating chamber; a gas flow rate control and supply unit for controlling a flow rate of a desired gas to supply the desired gas into the accommodating chamber; a load-lock chamber, located between the atmospheric transfer unit and accommodating chamber, for loading and unloading the substrate from the atmospheric transfer unit to the accommodating chamber or from the accommodating chamber to the atmospheric transfer unit; a gate valve, allowed to be opened and closed, connecting the load-lock chamber and the accommodating chamber; and a control unit configured to control a substrate processing method, the method including: a first step of transferring the substrate into the accommodating chamber via the atmospheric transfer unit and the load-lock chamber; a second step of mounting the substrate on the mounting table and decreasing the pressure in the accommodating chamber; a third step of supplying the heat-transfer gas to the space between the substrate and the mounting table; a fourth step of etching the substrate; a fifth step of stopping, after the fourth step, a heat-transfer gas supply and removing the heat-transfer gas from the space between the substrate and the mounting table by vacuum-pumping; a sixth step of removing electrostatic charges on the substrate by bringing the substrate into contact with a plasma; and a seventh step of taking out the substrate from the accommodating chamber, wherein in at least one of the first to the seventh step, at least one of operations (a) to (g) is performed: (a) simultaneously performing a vacuum-pumping operation for vacuum-pumping the heat transfer gas supply line and a transferring operation for transferring the substrate into the accommodating chamber, (b) simultaneously performing the transferring operation for transferring the substrate into the accommodating chamber and a pressure-up operation for increasing the pressure in the accommodating chamber by the pressure control unit, (c) simultaneously performing an application stopping operation for stopping an application of the high-frequency power by the high-frequency power supply, a gas supply stopping operation for stopping a supply of the desired gas by the gas flow rate control and supply unit, and the vacuum-pumping operation for vacuum-pumping the heat transfer gas supply line, (d) simultaneously performing a pin protruding operation for protruding the elevation pins, a pressure-down operation for decreasing the pressure in the accommodating chamber by the pressure control unit, and the gas supply stopping operation for stopping the supply of the desired gas by the gas flow rate control and supply unit, (e) simultaneously performing the pressure-up operation for increasing the pressure in the accommodating chamber by the pressure control unit and a mounting table elevating operation for moving up the mounting table, (f) simultaneously performing the pressure-down operation for decreasing the pressure in the accommodating chamber by the pressure control unit and a mounting table moving-down operation for moving down the mounting table, and (g) simultaneously performing the pin protruding operation for protruding the elevation pins and a closing operation for closing the gate valve.
A substrate processing system etches substrates using a multi-step process in a controlled environment. The system includes an atmospheric transfer unit for moving substrates, a load-lock chamber for transferring substrates into and out of a processing chamber (accommodating chamber), and a gate valve that seals the processing chamber from the load-lock. Inside the processing chamber, a mounting table holds the substrate, and a high-frequency power supply is connected to the mounting table to apply etching power. A heat-transfer gas is supplied to the space between the substrate and the mounting table to control temperature. The system controls the chamber pressure and gas flow rates. The substrate processing involves these steps: transferring the substrate, lowering pressure in the chamber, supplying the heat-transfer gas, etching, stopping the gas supply and vacuuming, neutralizing electrostatic charges with plasma, and removing the substrate. The system performs at least one of these actions simultaneously to optimize time: vacuuming the heat transfer gas line while transferring the substrate in, increasing pressure while transferring the substrate, stopping power, gas flow, and vacuuming the heat transfer gas line, protruding pins while lowering pressure and stopping gas flow, increasing pressure while elevating the mounting table, decreasing pressure while lowering the mounting table, or protruding pins while closing the gate valve.
2. A non-transitory storage medium including computer executable instructions, wherein the instructions, when executed by a processor, cause the processor to perform a substrate processing method for processing a substrate by using a substrate processing system, wherein the substrate processing system includes: an atmospheric transfer unit for transferring the substrate from a wafer cassette; an accommodating chamber for accommodating therein the substrate and decreasing a pressure therein; a mounting table placed in the accommodating chamber for mounting thereon the substrate; a high-frequency power supply for supplying a high-frequency power to the mounting table; a heat-transfer gas supply line for supplying a heat-transfer gas to a space between the substrate mounted on the mounting table and the mounting table; elevation pins protruded from the mounting table to move up and down the substrate; a pressure control unit for controlling a pressure in the accommodating chamber, and a gas flow rate control and supply unit for controlling a flow rate of a desired gas to supply the desired gas into the accommodating chamber; a load-lock chamber, located between the atmospheric transfer unit and the accommodating chamber, for loading and unloading the substrate from the atmospheric transfer unit to the substrate processing device or from the substrate processing device to the atmospheric transfer unit; a gate valve, allowed to be opened and closed, connecting the load-lock chamber and the accommodating chamber; and the substrate processing method comprising: a first step of transferring the substrate into the accommodating chamber via the atmospheric transfer unit and the load-lock chamber; a second step of mounting the substrate on the mounting table and decreasing the pressure in the accommodating chamber; a third step of supplying the heat-transfer gas to the space between the substrate and the mounting table; a fourth step of etching the substrate; a fifth step of stopping, after the fourth step, a heat-transfer gas supply and removing the heat-transfer gas from the space between the substrate and the mounting table by vacuum-pumping; a sixth step of removing electrostatic charges on the substrate by bringing the substrate into contact with a plasma; and a seventh step of taking out the substrate from the accommodating chamber, wherein in at least one of the first to the seventh step, at least one of operations (a) to (g) is performed: (a) simultaneously performing a vacuum-pumping operation for vacuum-pumping the heat transfer gas supply line and a transferring operation for transferring the substrate into the accommodating chamber, (b) simultaneously performing the transferring operation for transferring the substrate into the accommodating chamber and a pressure-up operation for increasing the pressure in the accommodating chamber by the pressure control unit, (c) simultaneously performing an application stopping operation for stopping an application of the high-frequency power by the high-frequency power supply, a gas supply stopping operation for stopping a supply of the desired gas by the gas flow rate control and supply unit, and the vacuum-pumping operation for vacuum-pumping the heat transfer gas supply line, (d) simultaneously performing a pin protruding operation for protruding the elevation pins, a pressure-down operation for decreasing the pressure in the accommodating chamber by the pressure control unit, and the gas supply stopping operation for stopping the supply of the desired gas by the gas flow rate control and supply unit, (e) simultaneously performing the pressure-up operation for increasing the pressure in the accommodating chamber by the pressure control unit and a mounting table elevating operation for moving up the mounting table, (f) simultaneously performing the pressure-down operation for decreasing the pressure in the accommodating chamber by the pressure control unit and a mounting table moving-down operation for moving down the mounting table, and (g) simultaneously performing the pin protruding operation for protruding the elevation pins and a closing operation for closing the gate valve.
A computer-readable storage medium stores instructions to control a substrate processing system for etching substrates. The system comprises an atmospheric transfer unit for moving substrates from a cassette, a load-lock chamber for transferring substrates into and out of the processing chamber (accommodating chamber), and a gate valve connecting the load-lock chamber and the processing chamber. Inside the processing chamber, a mounting table holds the substrate, and a high-frequency power supply is connected to the mounting table to apply etching power. A heat-transfer gas is supplied to the space between the substrate and the mounting table to control temperature. The system controls the chamber pressure and gas flow rates. The substrate processing involves these steps: transferring the substrate, lowering pressure in the chamber, supplying the heat-transfer gas, etching, stopping the gas supply and vacuuming, neutralizing electrostatic charges with plasma, and removing the substrate. The instructions cause the system to perform at least one of these actions simultaneously to optimize time: vacuuming the heat transfer gas line while transferring the substrate in, increasing pressure while transferring the substrate, stopping power, gas flow, and vacuuming the heat transfer gas line, protruding pins while lowering pressure and stopping gas flow, increasing pressure while elevating the mounting table, decreasing pressure while lowering the mounting table, or protruding pins while closing the gate valve.
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August 2, 2012
July 2, 2013
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