Provided are a substrate liquid processing apparatus, a substrate liquid processing method, and a computer readable storage medium having a substrate liquid processing program stored therein that can prevent the occurrence of the electrostatic breakdown caused by the discharge of electric charges in a substrate. The substrate liquid processing apparatus processes a circuit-forming surface of the substrate with a chemical liquid. Furthermore, prior to processing the substrate with the chemical liquid, the substrate liquid processing apparatus performs an anti-static process for an surface opposite to the circuit-forming surface of the substrate by an anti-static liquid, thereby emitting the electric charges on the substrate.
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1. A substrate liquid processing method comprising: processing a substrate with a chemical liquid supplied from a first processing liquid supply device toward a circuit-forming surface of the substrate; and prior to the processing step, ejecting an anti-static liquid from a second processing liquid supply device toward a surface opposite to the circuit-forming surface thereby performing an anti-static process on the surface opposite to the circuit-forming surface prior to the processing step emitting electric charges exist inside of the substrate from the surface opposite to the circuit-forming surface of the substrate.
A method for processing semiconductor substrates with liquid chemicals prevents electrostatic discharge. Before applying a chemical liquid to the circuit-forming surface of the substrate from a first supply, an anti-static liquid is ejected from a second supply onto the opposite surface. This neutralizes electric charges on the substrate by discharging them from the back surface before the chemical processing begins. The substrate is processed with a chemical liquid supplied from a first processing liquid supply device toward the circuit-forming surface of the substrate
2. The substrate liquid processing method according to claim 1 , further comprising, prior to the anti-static process, performing a preliminary process in which a deionized water serving as a processing liquid is supplied toward the substrate while rotating the substrate thereby forming a thin film of the deionized water on the surface of the substrate.
Before applying the anti-static liquid to the back surface of a substrate, deionized water is supplied to the substrate while rotating it. This forms a thin film of deionized water on the substrate's surface as a preliminary step to the anti-static process described in the previous claim. The substrate is then processed with a chemical liquid supplied from a first processing liquid supply device toward the circuit-forming surface of the substrate
3. The substrate liquid processing method according to claim 2 , wherein the conductivity of the deionized water is lower than that of the anti-static liquid.
In the substrate liquid processing method where a thin film of deionized water is applied to the substrate prior to using an anti-static liquid, the deionized water has a lower conductivity than the anti-static liquid. The anti-static liquid is ejected toward a surface opposite to the circuit-forming surface to emit electric charges prior to processing the circuit-forming surface with a chemical liquid supplied from a first processing liquid supply device. The deionized water is supplied while rotating the substrate thereby forming a thin film of the deionized water on the surface of the substrate.
4. The substrate liquid processing method according to claim 1 , wherein the conductivity of the anti-static liquid is the same as or higher than that of the chemical liquid used for processing the circuit-forming surface of the substrate.
The anti-static liquid that is ejected on the back of the substrate to remove electric charges has the same or higher conductivity than the chemical liquid used to process the front (circuit-forming) surface of the substrate. The substrate is processed with a chemical liquid supplied from a first processing liquid supply device toward the circuit-forming surface of the substrate and an anti-static liquid is ejected from a second processing liquid supply device toward a surface opposite to the circuit-forming surface.
5. The substrate liquid processing method according to claim 4 , wherein the anti-static liquid is the chemical liquid used for processing the circuit-forming surface of the substrate.
The anti-static liquid used to neutralize the substrate's electrical charge before processing is the same chemical liquid used to process the front (circuit-forming) surface of the substrate. The substrate is processed with a chemical liquid supplied from a first processing liquid supply device toward the circuit-forming surface of the substrate and an anti-static liquid is ejected from a second processing liquid supply device toward a surface opposite to the circuit-forming surface. The conductivity of the anti-static liquid is the same as or higher than that of the chemical liquid used for processing the circuit-forming surface of the substrate.
6. The substrate liquid processing method according to claim 1 , further comprising ejecting a mist phase of a mixture of a rinse liquid for rising the substrate and a gas from the second processing liquid supply device toward a surface opposite to the circuit-forming surface of the substrate, after the processing step.
After processing the circuit-forming surface of the substrate with a chemical liquid, a mist of rinse liquid and gas is sprayed onto the back surface of the substrate from the second processing liquid supply device. This rinse liquid and gas mist is used for rinsing the substrate after the chemical processing step, removing any residual chemicals or contaminants. This occurs after applying a chemical liquid to the circuit-forming surface of the substrate from a first supply, and ejecting an anti-static liquid from a second supply onto the opposite surface before the chemical processing begins.
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October 12, 2010
July 2, 2013
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