A method calculates a total source/drain resistance for a field effect transistor (FET) device. The method counts the number (N) of contacts in each source/drain region of the FET device, partitions each source/drain region into N contact regions and calculates a set of resistances of elements and connections to the FET device. The measured dimensions of widths, lengths, and distances of layout shapes forming the FET and the connections to the FET are determined and a set of weights based on relative widths of the contact regions are computed. The total source/drain resistance of the FET device is determined by summing products of the set of resistances and the set of weights for each of a plurality of contacts in series, the summing being performed for all of the plurality of contacts in one of a source region and a drain region of the FET. A netlist is formed based on the total source resistance and total drain resistance of the FET device.
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1. A computer-implemented method of calculating total resistance of a field effect transistor (FET) device, said method comprising: counting, by a computing device, a number (N) of contacts in each source region and drain region of said FET device; partitioning, by said computing device, each said source region and each said drain region into a plurality of contact regions, a number of contact regions in each said source region and each said drain region being equal to said number of contacts in each said source region and each said drain region, respectively; calculating, by said computing device, a set of resistances comprising a wire resistance (r), a contact resistance (R CA ), and a diffusion resistance (R) for each of said contacts in said FET device; determining, by said computing device, measured dimensions of widths, lengths, and distances of layout shapes forming said FET device and connections to said FET device; computing, by said computing device, a set of weights based on relative widths of said contact regions; determining, by said computing device, said total resistance of said FET device by summing products of said set of resistances and said set of weights for each of a plurality of contacts in series, said summing being performed for all of said plurality of contacts in one of said source region and said drain region of said FET device; and forming, by said computing device a netlist based on said total resistance of said FET device.
A computer program calculates the total resistance of a Field Effect Transistor (FET). The program counts the number of contacts (N) on the source and drain regions. Each source/drain region is divided into N contact regions. For each contact, the program calculates the wire resistance, contact resistance, and diffusion resistance. It determines the widths, lengths, and distances of the FET layout and connections. Weights are assigned to each contact region based on its relative width. The total resistance is calculated by summing the products of the resistances and weights for all contacts in series within either the source or drain region. Finally, the program creates a netlist based on this total resistance, representing the electrical connections for circuit simulation.
2. The computer-implemented method according to claim 1 , said measured dimensions of widths, lengths, and distances of layout shapes forming said FET device and connections to said device further comprising: a total diffusion region width (W RX ) being defined as a dimension between a first edge of a diffusion region (RX) and a second edge of said diffusion region opposite said first edge, said first edge of said diffusion region intersecting a wire which connects to contacts in said diffusion region; a cumulative width (ŵ n ) being defined for each contact of said plurality of contacts by a dimension from said second edge of said diffusion region to a distal edge of a contact region for a particular contact; and a contact region width (w n ) being defined for each contact of said plurality of contacts by one of: a dimension between a pair of adjacent midpoints between three adjacent contacts, a dimension between a first midpoint between two adjacent contacts and said first edge of said diffusion region, and a dimension between a second midpoint between two adjacent contacts and said second edge of said diffusion region opposite said first edge.
In the FET resistance calculation described above, the program measures specific dimensions of the FET layout. The "total diffusion region width" (W_RX) is the distance between the edges of the diffusion region (RX). A "cumulative width" (ŵ_n) is calculated for each contact as the distance from one edge of the diffusion region to the end of the contact region. The "contact region width" (w_n) for each contact is determined by: either the distance between the midpoints of adjacent contacts, or the distance from a midpoint to the edge of the diffusion region in cases where the contact is on an edge.
3. The computer-implemented method according to claim 2 , said set of weights further comprising: a wire resistance weight comprising a square of a ratio of said cumulative width (ŵ n ) over said total diffusion region width (W RX ); and a contact/diffusion resistance weight comprising a square of a ratio of said contact region width (w n ) over said total diffusion region width (W RX ).
In the FET resistance calculation described above, the program assigns weights based on calculated widths. The "wire resistance weight" is the square of the ratio of the "cumulative width" (ŵ_n) to the "total diffusion region width" (W_RX). The "contact/diffusion resistance weight" is the square of the ratio of the "contact region width" (w_n) to the "total diffusion region width" (W_RX). These weights influence the contribution of each resistance to the total resistance calculation.
4. A computer-implemented method of determining a total resistance for a field effect transistor (FET) device, said FET device including a plurality of contacts on a wire (M 1 ) having an intersection with a diffusion region (RX) at a first edge of said diffusion region, said diffusion region (RX) having a total diffusion region width (W RX ) being defined as a dimension between said first edge and a second edge of said diffusion region opposite said intersection at said diffusion region (RX) first edge, said method comprising: counting, by a computing device, a number (N) of contacts in each source region and drain region of said FET device; partitioning, by said computing device, each source region and drain region into a plurality of contact regions, a number of contact regions being equal to said number of contacts; determining, by said computing device, resistances of a wire resistance (r), a contact resistance (R CA ), and a diffusion resistance (R) for each of said plurality of contacts in said FET device; determining, by said computing device, a wire resistance weight; determining, by said computing device, a contact/diffusion resistance weight; determining, by said computing device, an effective resistance (R Eff ) for each of said plurality of contacts by summing for each particular contact products of: said wire resistance weight and said wire resistance (r), said contact/diffusion resistance weight and said contact resistance (R CA ), and said contact/diffusion resistance weight and said diffusion resistance (R); determining, by said computing device, a total resistance (R tot ) for one of said source region and said drain region by summing in series each of said effective resistances (R Eff ) for contacts contained in one of said source region and said drain region, respectively; and outputting, from said computing device, one of said effective resistances (R Eff ) for each of said plurality of contacts and said total resistance (R tot ) for one of said source region and said drain region.
A computer program determines the total resistance of a Field Effect Transistor (FET). The FET has multiple contacts on a wire (M1) intersecting a diffusion region (RX) at one edge. The total diffusion region width (W_RX) is the distance between the two RX edges. The program counts the number of contacts (N) in the source and drain regions, dividing each region into N contact regions. It determines wire, contact, and diffusion resistances for each contact. It calculates a wire resistance weight and a contact/diffusion resistance weight. For each contact, it computes an "effective resistance" by summing the products of: wire resistance weight * wire resistance, contact/diffusion resistance weight * contact resistance, and contact/diffusion resistance weight * diffusion resistance. Finally, the total resistance for the source or drain region is calculated by summing the effective resistances in series for all contacts in that region, and this total resistance as well as the effective resistances are output.
5. The computer-implemented method according to claim 4 , a set of said plurality of contacts comprising source region contacts.
The computer program for determining total FET resistance, which calculates effective resistance for each contact and sums them to get the total resistance for either the source or drain region, can be applied specifically to the source region contacts.
6. The computer-implemented method according to claim 4 , a set of said plurality of contacts comprising drain region contacts.
The computer program for determining total FET resistance, which calculates effective resistance for each contact and sums them to get the total resistance for either the source or drain region, can be applied specifically to the drain region contacts.
7. The computer-implemented method according to claim 4 , said wire resistance weight comprising a square of a ratio of a cumulative width (ŵ n ) over said total diffusion region width (W RX ).
In the computer program for determining total FET resistance, the "wire resistance weight" used in calculating the effective resistance of each contact is calculated as the square of the ratio of the "cumulative width" (ŵ_n) to the "total diffusion region width" (W_RX).
8. The computer-implemented method according to claim 7 , said cumulative width (ŵ n ) being defined for each contact of said plurality of contacts by a dimension from said second edge of said diffusion region to a distal edge of a contact region for a particular contact.
In the computer program for determining total FET resistance, where the wire resistance weight is the square of cumulative width divided by the total diffusion region width, the "cumulative width" (ŵ_n) for each contact is the distance from one edge of the diffusion region to the furthest edge of that contact's region.
9. The computer-implemented method according to claim 8 , said distal edge of said contact region being defined by one of: a midpoint between two adjacent contacts, and said first edge of said diffusion region.
In the computer program for determining total FET resistance, where the cumulative width is defined as the distance from one edge of the diffusion region to the distal edge of the contact region, that distal edge can be either the midpoint between two adjacent contacts or the first edge of the diffusion region where the wire intersects.
10. The computer-implemented method according to claim 4 , said contact/diffusion resistance weight comprising a square of a ratio of a contact region width (w n ) over said total diffusion region width (W RX ).
In the computer program for determining total FET resistance, the "contact/diffusion resistance weight" used in calculating the effective resistance of each contact is calculated as the square of the ratio of the "contact region width" (w_n) to the "total diffusion region width" (W_RX).
11. The computer-implemented method according to claim 10 , said contact region width (w n ) being defined for each contact of said plurality of contacts by one of: a dimension between a pair of adjacent midpoints between three adjacent contacts; a dimension between a first midpoint between two adjacent contacts and said first edge of said diffusion region; and a dimension between a second midpoint between two adjacent contacts and said second edge of said diffusion region opposite said first edge.
In the computer program for determining total FET resistance, where the contact/diffusion resistance weight is the square of the contact region width divided by the total diffusion region width, the "contact region width" (w_n) can be calculated as: the distance between midpoints of three adjacent contacts; the distance between a midpoint of two adjacent contacts and the first edge of the diffusion region; or the distance between a midpoint of two adjacent contacts and the second edge of the diffusion region.
12. A non-transitory computer storage medium storing computer-readable instruction executable by a computer to perform a method that determines a total resistance for a field effect transistor (FET) device, said FET device including a plurality of contacts on a wire (M 1 ) having an intersection with a diffusion region (RX) at a first edge of said diffusion region, said diffusion region (RX) having a total diffusion region width (W RX ) defined as a dimension between said first edge and a second edge of said diffusion region opposite said intersection at said diffusion region (RX) first edge, said method comprising: counting a number (N) of contacts in each source region and drain region of said FET device; partitioning each said source region and each said drain region into a plurality of contact regions, a number of contact regions in each said source region and each said drain region being equal to said number of contacts in each said source region and each said drain region, respectively; determining resistances of a wire resistance (r), a contact resistance (R CA ), and a diffusion resistance (R) for each of said plurality of contacts in said FET device; determining a wire resistance weight; determining a contact/diffusion resistance weight; determining an effective resistance (R Eff ) for each of said plurality of contacts by summing, for each particular contact, products of: said wire resistance weight and said wire resistance (r), said contact/diffusion resistance weight and said contact resistance (R CA ), and said contact/diffusion resistance weight and said diffusion resistance (R); determining a total resistance (R tot ) for one of said source region and said drain region by summing in series each of said effective resistances (R Eff ) for contacts contained in said source region and said drain region, respectively; and outputting one of said effective resistances (R Eff ) for each of said plurality of contacts and said total resistance (R tot ) for one of said source region and said drain region.
A non-transitory computer storage medium stores instructions to determine the total resistance of a Field Effect Transistor (FET). The FET has contacts on a wire (M1) intersecting a diffusion region (RX). The "total diffusion region width" (W_RX) is the distance between the RX edges. The instructions count the number of contacts (N) in the source/drain regions and divide each region into N contact regions. They determine wire, contact, and diffusion resistances for each contact. Wire and contact/diffusion resistance weights are calculated. An "effective resistance" is calculated for each contact by summing the products of: wire resistance weight * wire resistance, contact/diffusion resistance weight * contact resistance, and contact/diffusion resistance weight * diffusion resistance. The total source/drain resistance is calculated by summing the effective resistances in series, and finally the effective resistances and the total resistance are output.
13. The non-transitory computer storage medium according to claim 12 , a set of said plurality of contacts comprising source region contacts.
The non-transitory computer storage medium containing instructions for determining the total FET resistance, which calculates effective resistance for each contact and sums them to get the total resistance for either the source or drain region, can be applied specifically to the source region contacts.
14. The non-transitory computer storage medium according to claim 12 , a set of said plurality of contacts comprising drain region contacts.
The non-transitory computer storage medium containing instructions for determining the total FET resistance, which calculates effective resistance for each contact and sums them to get the total resistance for either the source or drain region, can be applied specifically to the drain region contacts.
15. The non-transitory computer storage medium according to claim 12 , said wire resistance weight comprising a square of a ratio of a cumulative width (ŵ n ) over said total diffusion region width (W RX ).
The non-transitory computer storage medium containing instructions for determining the total FET resistance, the "wire resistance weight" is calculated as the square of the ratio of the "cumulative width" (ŵ_n) to the "total diffusion region width" (W_RX).
16. The non-transitory computer storage medium according to claim 15 , said cumulative width (ŵ n ) being defined for each contact of said plurality of contacts by a dimension from said second edge of said diffusion region to a distal edge of a contact region for a particular contact.
The non-transitory computer storage medium containing instructions for determining the total FET resistance, where the wire resistance weight is the square of cumulative width divided by total diffusion region width, the "cumulative width" (ŵ_n) for each contact is the distance from one edge of the diffusion region to the furthest edge of that contact's region.
17. The non-transitory computer storage medium according to claim 16 , said distal edge of said contact region being defined by one of: a midpoint between two adjacent contacts, and said first edge of said diffusion region.
The non-transitory computer storage medium containing instructions for determining the total FET resistance, where the cumulative width is defined as the distance from one edge of the diffusion region to the distal edge of the contact region, that distal edge can be either the midpoint between two adjacent contacts or the first edge of the diffusion region where the wire intersects.
18. The non-transitory computer storage medium according to claim 12 , said contact/diffusion resistance weight comprising a square of a ratio of a contact region width (w n ) over said total diffusion region width (W RX ).
The non-transitory computer storage medium containing instructions for determining the total FET resistance, the "contact/diffusion resistance weight" is calculated as the square of the ratio of the "contact region width" (w_n) to the "total diffusion region width" (W_RX).
19. The non-transitory computer storage medium according to claim 18 , said contact region width (w n ) being defined for each contact of said plurality of contacts by one of: a dimension between a pair of adjacent midpoints between three adjacent contacts; a dimension between a first midpoint between two adjacent contacts and said first edge of said diffusion region; and a dimension between a second midpoint between two adjacent contacts and said second edge of said diffusion region opposite said first edge.
The non-transitory computer storage medium containing instructions for determining the total FET resistance, where the contact/diffusion resistance weight is the square of the contact region width divided by the total diffusion region width, the "contact region width" (w_n) can be calculated as: the distance between midpoints of three adjacent contacts; the distance between a midpoint of two adjacent contacts and the first edge of the diffusion region; or the distance between a midpoint of two adjacent contacts and the second edge of the diffusion region.
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March 2, 2011
July 2, 2013
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