A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.
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1. A light emitting diode, comprising: a substrate; a plurality of pillar structures formed on the substrate, wherein each of the pillar structures comprises a first type semiconductor layer, an active layer, and a second type semiconductor layer, wherein the first type semiconductor layers are formed on the substrate, and the pillar structures are electrically connected with each other through the first type semiconductor layers; a filler structure formed between the pillar structures, wherein the filler structure includes a passivation layer formed on sidewalls of the pillar structures and surfaces of the first type semiconductor layers and the passivation layer is made of a first dielectric material having a chemical formula Al x In y Ga z ) 2-δ O 3 , wherein x+y+z=1 and 0≦δ<1; a transparent conductive layer, wherein the filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer; a first electrode in contact with the transparent conductive layer; and a second electrode in contact with the first type semiconductor layer.
The light-emitting diode (LED) has a substrate with multiple pillar structures on it. Each pillar contains a first-type semiconductor layer (e.g., N-type), an active layer (where light is generated), and a second-type semiconductor layer (e.g., P-type). The first-type semiconductor layers electrically connect the pillars. A filler structure sits between the pillars. This filler includes a passivation layer, made of a dielectric material (AlxInyGaz)2-δO3, that covers the pillar sidewalls and the top surface of the first-type semiconductor. A transparent conductive layer (e.g. ITO) covers the filler structure and the second-type semiconductor layers of the pillars. Finally, there's a first electrode in contact with the transparent conductive layer and a second electrode in contact with the first-type semiconductor layer.
2. The light emitting diode as claimed in claim 1 , wherein the first type semiconductor layer is an N-type layer, and the second type semiconductor layer is a P-type layer.
The light-emitting diode (LED) described in claim 1 has a substrate with multiple pillar structures on it. Each pillar contains a first type semiconductor layer (e.g., N-type), an active layer (where light is generated), and a second type semiconductor layer (e.g., P-type). The first type semiconductor layers electrically connect the pillars. A filler structure sits between the pillars. This filler includes a passivation layer, made of a dielectric material (AlxInyGaz)2-δO3, that covers the pillar sidewalls and the top surface of the first type semiconductor. A transparent conductive layer (e.g. ITO) covers the filler structure and the second type semiconductor layers of the pillars. Finally, there's a first electrode in contact with the transparent conductive layer and a second electrode in contact with the first type semiconductor layer. In this specific LED, the first type semiconductor layer is an N-type layer and the second type semiconductor layer is a P-type layer.
3. The light emitting diode as claimed in claim 1 , wherein the pillar structure has a width in a range between λ/2 and 20 μm, and the pillar structure has a height in a range between 0 and 10 μm, wherein λ is a wavelength of a light from the light emitting diode.
The light-emitting diode (LED) described in claim 1 has a substrate with multiple pillar structures on it. Each pillar contains a first type semiconductor layer (e.g., N-type), an active layer (where light is generated), and a second type semiconductor layer (e.g., P-type). The first type semiconductor layers electrically connect the pillars. A filler structure sits between the pillars. This filler includes a passivation layer, made of a dielectric material (AlxInyGaz)2-δO3, that covers the pillar sidewalls and the top surface of the first type semiconductor. A transparent conductive layer (e.g. ITO) covers the filler structure and the second type semiconductor layers of the pillars. Finally, there's a first electrode in contact with the transparent conductive layer and a second electrode in contact with the first type semiconductor layer. The pillar structures are between λ/2 and 20 μm wide and between 0 and 10 μm high, where λ is the wavelength of the light emitted.
4. The light emitting diode as claimed in claim 1 , wherein the filler structure comprises: an electrical isolation layer filled between sidewalls of the passivation layer.
The light-emitting diode (LED) described in claim 1 has a substrate with multiple pillar structures on it. Each pillar contains a first type semiconductor layer (e.g., N-type), an active layer (where light is generated), and a second type semiconductor layer (e.g., P-type). The first type semiconductor layers electrically connect the pillars. A filler structure sits between the pillars. This filler includes a passivation layer, made of a dielectric material (AlxInyGaz)2-δO3, that covers the pillar sidewalls and the top surface of the first type semiconductor. A transparent conductive layer (e.g. ITO) covers the filler structure and the second type semiconductor layers of the pillars. Finally, there's a first electrode in contact with the transparent conductive layer and a second electrode in contact with the first type semiconductor layer. The filler structure also includes an electrical isolation layer filling the spaces between the sidewalls of the passivation layer.
5. The light emitting diode as claimed in claim 4 , wherein the electrical isolation layer is made of a second dielectric material, wherein the second dielectric material is silicon dioxide (SiO 2 ), hafnium oxide (HfO 2 ), aluminum oxide (Al 2 O 3 ), silicon nitride (Si 3 N 4 ) or tantalum pentoxide (Ta 2 O 5 ).
The light-emitting diode (LED) described in claim 4 has a substrate with multiple pillar structures on it. Each pillar contains a first type semiconductor layer (e.g., N-type), an active layer (where light is generated), and a second type semiconductor layer (e.g., P-type). The first type semiconductor layers electrically connect the pillars. A filler structure sits between the pillars. This filler includes a passivation layer, made of a dielectric material (AlxInyGaz)2-δO3, that covers the pillar sidewalls and the top surface of the first type semiconductor, and an electrical isolation layer filling the spaces between the sidewalls of the passivation layer. A transparent conductive layer (e.g. ITO) covers the filler structure and the second type semiconductor layers of the pillars. Finally, there's a first electrode in contact with the transparent conductive layer and a second electrode in contact with the first type semiconductor layer. The electrical isolation layer is made of silicon dioxide (SiO2), hafnium oxide (HfO2), aluminum oxide (Al2O3), silicon nitride (Si3N4) or tantalum pentoxide (Ta2O5).
6. The light emitting diode as claimed in claim 1 , wherein the transparent conductive layer is made of a third dielectric material, wherein the third dielectric material is indium tin oxide (ITO), indium trioxide (In 2 O 3 ), tin oxide (Sn 2 O 3 ), zinc oxide (ZnO) or NiO x wherein 0<x≦1.
The light-emitting diode (LED) described in claim 1 has a substrate with multiple pillar structures on it. Each pillar contains a first type semiconductor layer (e.g., N-type), an active layer (where light is generated), and a second type semiconductor layer (e.g., P-type). The first type semiconductor layers electrically connect the pillars. A filler structure sits between the pillars. This filler includes a passivation layer, made of a dielectric material (AlxInyGaz)2-δO3, that covers the pillar sidewalls and the top surface of the first type semiconductor. A transparent conductive layer (e.g. ITO) covers the filler structure and the second type semiconductor layers of the pillars. Finally, there's a first electrode in contact with the transparent conductive layer and a second electrode in contact with the first type semiconductor layer. The transparent conductive layer is made of indium tin oxide (ITO), indium trioxide (In2O3), tin oxide (SnO2), zinc oxide (ZnO), or NiOx (where 0<x≤1).
7. The light emitting diode as claimed in claim 1 , wherein the transparent conductive layer further has a subwavelength surface structure.
The light-emitting diode (LED) described in claim 1 has a substrate with multiple pillar structures on it. Each pillar contains a first type semiconductor layer (e.g., N-type), an active layer (where light is generated), and a second type semiconductor layer (e.g., P-type). The first type semiconductor layers electrically connect the pillars. A filler structure sits between the pillars. This filler includes a passivation layer, made of a dielectric material (AlxInyGaz)2-δO3, that covers the pillar sidewalls and the top surface of the first type semiconductor. A transparent conductive layer (e.g. ITO) covers the filler structure and the second type semiconductor layers of the pillars. Finally, there's a first electrode in contact with the transparent conductive layer and a second electrode in contact with the first type semiconductor layer. Furthermore, the transparent conductive layer has a subwavelength surface structure.
8. The light emitting diode as claimed in claim 7 , wherein the subwavelength surface structure has a height in a range between 0 and 2 μm, and the subwavelength surface structure has a width in a range between 0 and 500 nm.
The light-emitting diode (LED) described in claim 7 has a substrate with multiple pillar structures on it. Each pillar contains a first type semiconductor layer (e.g., N-type), an active layer (where light is generated), and a second type semiconductor layer (e.g., P-type). The first type semiconductor layers electrically connect the pillars. A filler structure sits between the pillars. This filler includes a passivation layer, made of a dielectric material (AlxInyGaz)2-δO3, that covers the pillar sidewalls and the top surface of the first type semiconductor. A transparent conductive layer (e.g. ITO) covers the filler structure and the second type semiconductor layers of the pillars, which has a subwavelength surface structure. Finally, there's a first electrode in contact with the transparent conductive layer and a second electrode in contact with the first type semiconductor layer. The subwavelength surface structure is between 0 and 2 μm high and between 0 and 500 nm wide.
9. A fabricating method of a light emitting diode, the fabricating method comprising steps of: providing a substrate; sequentially forming a first type semiconductor layer, an active layer, and a second type semiconductor layer on the substrate; performing a photolithography and etching process to form a plurality of pillar structures on the substrate, wherein each of the pillar structures comprises the first type semiconductor layer, the active layer, and the second type semiconductor layer, wherein the pillar structures are electrically connected with each other through the first type semiconductor layers; forming a filler structure between the pillar structures, wherein the filler structure includes a passivation layer formed on sidewalls of the pillar structures and surfaces of the first type semiconductor layers and the passivation layer is made of a first dielectric material having a chemical formula (Al x In y Ga z ) 2-δ O 3 , wherein x+y+z=1 and 0≦δ<1; forming a transparent conductive layer to cover the filler structure and the second type semiconductor layers of the pillar structures; forming a first electrode on the transparent conductive layer; and forming a second electrode on the first type semiconductor layer.
The method for fabricating the LED involves providing a substrate. Then, sequentially forming a first-type semiconductor layer (e.g., N-type), an active layer, and a second-type semiconductor layer (e.g., P-type) on the substrate. Use photolithography and etching to create multiple pillar structures, each containing the three layers. These pillars are electrically connected through the first-type semiconductor layers. Form a filler structure between the pillars, including a passivation layer (AlxInyGaz)2-δO3 covering the pillar sidewalls and the first-type semiconductor layers. Next, form a transparent conductive layer (e.g. ITO) to cover the filler and the second-type semiconductor layers of the pillars. Finally, form a first electrode on the transparent conductive layer and a second electrode on the first-type semiconductor layer.
10. The fabricating method as claimed in claim 9 , wherein the first type semiconductor layer is an N-type layer, and the second type semiconductor layer is a P-type layer.
The method for fabricating the LED involves providing a substrate. Then, sequentially forming a first-type semiconductor layer (e.g., N-type), an active layer, and a second-type semiconductor layer (e.g., P-type) on the substrate. Use photolithography and etching to create multiple pillar structures, each containing the three layers. These pillars are electrically connected through the first-type semiconductor layers. Form a filler structure between the pillars, including a passivation layer (AlxInyGaz)2-δO3 covering the pillar sidewalls and the first-type semiconductor layers. Next, form a transparent conductive layer (e.g. ITO) to cover the filler and the second-type semiconductor layers of the pillars. Finally, form a first electrode on the transparent conductive layer and a second electrode on the first-type semiconductor layer. In this method, the first type semiconductor layer is an N-type layer, and the second type semiconductor layer is a P-type layer.
11. The fabricating method as claimed in claim 9 , wherein the pillar structure has a width in a range between λ/2 and 20 μm, and the pillar structure has a height in a range between 0 and 10 μm, wherein λ is a wavelength of a light from the light emitting diode.
The method for fabricating the LED involves providing a substrate. Then, sequentially forming a first-type semiconductor layer (e.g., N-type), an active layer, and a second-type semiconductor layer (e.g., P-type) on the substrate. Use photolithography and etching to create multiple pillar structures, each containing the three layers. These pillars are electrically connected through the first-type semiconductor layers. Form a filler structure between the pillars, including a passivation layer (AlxInyGaz)2-δO3 covering the pillar sidewalls and the first-type semiconductor layers. Next, form a transparent conductive layer (e.g. ITO) to cover the filler and the second-type semiconductor layers of the pillars. Finally, form a first electrode on the transparent conductive layer and a second electrode on the first-type semiconductor layer. The pillar structures are between λ/2 and 20 μm wide and between 0 and 10 μm high, where λ is the wavelength of the light emitted.
12. The fabricating method as claimed in claim 9 , wherein the step of forming the filler structure comprises sub-steps of: forming the passivation layer on sidewalls of the pillar structures and surfaces of the first type semiconductor layers; and filling an electrical isolation layer between sidewalls of the passivation layer.
The method for fabricating the LED involves providing a substrate. Then, sequentially forming a first-type semiconductor layer (e.g., N-type), an active layer, and a second-type semiconductor layer (e.g., P-type) on the substrate. Use photolithography and etching to create multiple pillar structures, each containing the three layers. These pillars are electrically connected through the first-type semiconductor layers. The step of forming the filler structure between the pillar structures includes forming a passivation layer (AlxInyGaz)2-δO3 on the sidewalls of the pillar structures and surfaces of the first-type semiconductor layers, and filling an electrical isolation layer between the sidewalls of the passivation layer. Next, form a transparent conductive layer (e.g. ITO) to cover the filler and the second-type semiconductor layers of the pillars. Finally, form a first electrode on the transparent conductive layer and a second electrode on the first-type semiconductor layer.
13. The fabricating method as claimed in claim 12 , wherein the passivation layer is formed by a photo-enhanced wet oxidation process, a high temperature oxidation process, an atomic layer deposition process or a chemical vapor deposition process.
The method for fabricating the LED described in claim 12 involves providing a substrate. Then, sequentially forming a first-type semiconductor layer (e.g., N-type), an active layer, and a second-type semiconductor layer (e.g., P-type) on the substrate. Use photolithography and etching to create multiple pillar structures, each containing the three layers. These pillars are electrically connected through the first-type semiconductor layers. The step of forming the filler structure between the pillar structures includes forming a passivation layer (AlxInyGaz)2-δO3 on the sidewalls of the pillar structures and surfaces of the first-type semiconductor layers, and filling an electrical isolation layer between the sidewalls of the passivation layer. The passivation layer is formed by photo-enhanced wet oxidation, high-temperature oxidation, atomic layer deposition (ALD), or chemical vapor deposition (CVD). Next, form a transparent conductive layer (e.g. ITO) to cover the filler and the second-type semiconductor layers of the pillars. Finally, form a first electrode on the transparent conductive layer and a second electrode on the first-type semiconductor layer.
14. The fabricating method as claimed in claim 12 , wherein the electrical isolation layer is made of a second dielectric material, wherein the second dielectric material is silicon dioxide (SiO 2 ), hafnium oxide (HfO 2 ), aluminum oxide (Al 2 O 3 ), silicon nitride (Si 3 N 4 ) or tantalum pentoxide (Ta 2 O 5 ).
The method for fabricating the LED described in claim 12 involves providing a substrate. Then, sequentially forming a first-type semiconductor layer (e.g., N-type), an active layer, and a second-type semiconductor layer (e.g., P-type) on the substrate. Use photolithography and etching to create multiple pillar structures, each containing the three layers. These pillars are electrically connected through the first-type semiconductor layers. The step of forming the filler structure between the pillar structures includes forming a passivation layer (AlxInyGaz)2-δO3 on the sidewalls of the pillar structures and surfaces of the first-type semiconductor layers, and filling an electrical isolation layer between the sidewalls of the passivation layer. Next, form a transparent conductive layer (e.g. ITO) to cover the filler and the second-type semiconductor layers of the pillars. Finally, form a first electrode on the transparent conductive layer and a second electrode on the first-type semiconductor layer. The electrical isolation layer is made of silicon dioxide (SiO2), hafnium oxide (HfO2), aluminum oxide (Al2O3), silicon nitride (Si3N4) or tantalum pentoxide (Ta2O5).
15. The fabricating method as claimed in claim 9 , wherein the transparent conductive layer is made of a third dielectric material, wherein the third dielectric material is indium tin oxide (ITO), indium trioxide (In 2 O 3 ), tin oxide (Sn 2 O 3 ), zinc oxide (ZnO) or NiO x , wherein 0<x≦1.
The method for fabricating the LED involves providing a substrate. Then, sequentially forming a first-type semiconductor layer (e.g., N-type), an active layer, and a second-type semiconductor layer (e.g., P-type) on the substrate. Use photolithography and etching to create multiple pillar structures, each containing the three layers. These pillars are electrically connected through the first-type semiconductor layers. Form a filler structure between the pillars, including a passivation layer (AlxInyGaz)2-δO3 covering the pillar sidewalls and the first-type semiconductor layers. Next, form a transparent conductive layer (e.g. ITO) to cover the filler and the second-type semiconductor layers of the pillars. Finally, form a first electrode on the transparent conductive layer and a second electrode on the first-type semiconductor layer. The transparent conductive layer is made of indium tin oxide (ITO), indium trioxide (In2O3), tin oxide (SnO2), zinc oxide (ZnO), or NiOx (where 0<x≤1).
16. The fabricating method as claimed in claim 9 , wherein the transparent conductive layer further has a subwavelength surface structure.
The method for fabricating the LED involves providing a substrate. Then, sequentially forming a first-type semiconductor layer (e.g., N-type), an active layer, and a second-type semiconductor layer (e.g., P-type) on the substrate. Use photolithography and etching to create multiple pillar structures, each containing the three layers. These pillars are electrically connected through the first-type semiconductor layers. Form a filler structure between the pillars, including a passivation layer (AlxInyGaz)2-δO3 covering the pillar sidewalls and the first-type semiconductor layers. Next, form a transparent conductive layer (e.g. ITO) with a subwavelength surface structure, to cover the filler and the second-type semiconductor layers of the pillars. Finally, form a first electrode on the transparent conductive layer and a second electrode on the first-type semiconductor layer.
17. The fabricating method as claimed in claim 16 , wherein the subwavelength surface structure has a height in a range between 0 and 2 μm, and the subwavelength surface structure has a width in a range between 0 and 500 nm.
The method for fabricating the LED described in claim 16 involves providing a substrate. Then, sequentially forming a first-type semiconductor layer (e.g., N-type), an active layer, and a second-type semiconductor layer (e.g., P-type) on the substrate. Use photolithography and etching to create multiple pillar structures, each containing the three layers. These pillars are electrically connected through the first-type semiconductor layers. Form a filler structure between the pillars, including a passivation layer (AlxInyGaz)2-δO3 covering the pillar sidewalls and the first-type semiconductor layers. Next, form a transparent conductive layer (e.g. ITO) with a subwavelength surface structure, to cover the filler and the second-type semiconductor layers of the pillars. Finally, form a first electrode on the transparent conductive layer and a second electrode on the first-type semiconductor layer. The subwavelength surface structure is between 0 and 2 μm high and between 0 and 500 nm wide.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
January 17, 2012
July 16, 2013
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