A semiconductor circuit device includes a semiconductor circuit including a switching element, a temperature monitoring unit, and a control unit. The temperature monitoring unit detects or estimates a temperature of a component connected to an inside or an outside of the semiconductor circuit. Here, the temperature of the component changes in accordance with a frequency of a current flowing through the component, and the frequency of the current flowing through the component changes in accordance with a switching frequency of the switching element. The control unit adjusts the switching frequency of the switching element such that the temperature of the component is equal to a target temperature.
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1. A semiconductor circuit device, comprising: a semiconductor circuit including a switching element; a component temperature monitoring unit detecting or estimating a temperature of a component connected to an inside or an outside of said semiconductor circuit, the temperature of said component changing in accordance with a frequency of a current flowing through said component, the frequency of the current flowing through said component changing in accordance with a switching frequency of said switching element; a detection unit detecting an output voltage or an output current of the semiconductor circuit; and a control unit controlling a gate control signal driving said switching element by determining the switching frequency of the switching element such that the temperature of said component is equal to a first target temperature, wherein when the detection unit detects an output voltage of the semiconductor circuit, the control unit controls the gate control signal driving the switching element by determining a duty ratio of the switching element such that the detected output voltage of the semiconductor circuit is equal to a target voltage, and when the detection unit detects an output current of the semiconductor circuit, the control unit controls the gate control signal driving the switching element by determining a modulation wave amplitude of the semiconductor circuit such that the detected output current of the semiconductor circuit is equal to a target current.
A semiconductor circuit controls the temperature of a component by adjusting the switching frequency of a switching element within the circuit. A temperature sensor monitors the component's temperature, which changes with the current frequency through it, which in turn is affected by the switching frequency. A control unit regulates the switching frequency to maintain the component at a target temperature. The circuit also detects either the output voltage or current. If voltage is detected, the control unit adjusts the switching element's duty cycle to achieve a target voltage. If current is detected, the control unit adjusts the circuit's modulation wave amplitude to achieve a target current.
2. The semiconductor circuit device according to claim 1 , wherein said component is molded with an insulator made of a synthetic resin, and said control unit monitors accumulated energization time for said component that has elapsed since said first target temperature was set to an initial value, and, when said accumulated energization time exceeds a time determined depending on a synthetic resin material of the insulator for molding said component, said control unit changes said first target temperature to a temperature lower than said initial value.
The semiconductor circuit described previously controls the temperature of a component, encased in synthetic resin, by monitoring the accumulated time the component has been powered since a target temperature was initially set. If this accumulated "on" time exceeds a limit determined by the resin material properties, the target temperature is lowered to prevent overheating and degradation of the resin. This protects the component from long-term thermal stress.
3. The semiconductor circuit device according to claim 1 , further comprising: an element temperature monitoring unit detecting or estimating a temperature of said switching element; and a switching time adjusting unit adjusting switching time of said switching element, wherein said control unit further instructs said switching time adjusting unit to adjust the switching time of said switching element such that the temperature of said switching element is equal to a second target temperature.
The semiconductor circuit described previously also monitors and controls the temperature of its switching element in addition to the component. A separate temperature sensor monitors the switching element's temperature. A circuit adjusts the switching time of the switching element. The control unit adjusts the switching time of the switching element to keep the switching element at its own target temperature, independent of the component's temperature.
4. The semiconductor circuit device according to claim 1 , wherein said semiconductor circuit is a pulse width modulation DC-DC conversion circuit including a reactor as said component and converting input DC power into DC power having a magnitude in accordance with a switching operation of said switching element.
A semiconductor circuit device includes a pulse width modulation (PWM) DC-DC conversion circuit designed to convert input direct current (DC) power into output DC power with a controlled magnitude. The circuit achieves this conversion through a switching operation of a switching element, which regulates the output voltage by adjusting the duty cycle of the switching signal. The circuit incorporates a reactor as a key component, which stores and releases energy during the switching cycles to smooth the output voltage and reduce ripple. The reactor's inductance is selected to ensure stable operation and efficient power transfer. The PWM control mechanism dynamically adjusts the switching frequency or duty cycle to maintain the desired output voltage under varying load conditions. This design is particularly useful in applications requiring precise voltage regulation, such as power supplies for electronic devices, where efficiency and stability are critical. The reactor's role in energy storage and the switching element's operation are essential for achieving the desired DC-DC conversion with minimal power loss and high reliability. The circuit may also include additional components like capacitors and diodes to further enhance performance and protect against voltage spikes or current surges.
5. The semiconductor circuit device according to claim 1 , wherein said semiconductor circuit is a pulse width modulation DC-AC conversion circuit converting input DC power into AC power having a magnitude in accordance with a switching operation of said switching element, and outputting the AC power to a motor winding as said component.
The semiconductor circuit described previously is specifically implemented as a pulse width modulation (PWM) DC-AC converter. In this configuration, the component being temperature-controlled is a motor winding. The circuit converts a DC input voltage into an AC output voltage to drive the motor, and the temperature of the motor winding is maintained at a target value.
6. A semiconductor circuit device, comprising: a pulse width modulation DC-DC conversion circuit including a first switching element and a reactor connected to said first switching element, converting input DC power into DC power having a magnitude in accordance with a switching operation of said first switching element, and outputting the converted DC power; a pulse width modulation DC-AC conversion circuit including a second switching element, converting the DC power output from said DC-DC conversion circuit into AC power having a magnitude in accordance with a switching operation of said second switching element, and outputting the AC power to a motor winding; a first component temperature monitoring unit detecting or estimating a temperature of said reactor; a second component temperature monitoring unit detecting or estimating a temperature of said motor winding; a voltage detection unit detecting an output voltage of the pulse width modulation DC-DC conversion circuit, a current detection unit detecting an output current of the pulse width modulation DC-AC conversion circuit; and a control unit controlling a gate control signal driving said first switching element by determining a switching frequency of the first switching element such that the temperature of said reactor is equal to a first target temperature and by determining a duty ratio of the first switching element such that the detected output voltage of the pulse width modulation DC-DC conversion circuit is equal to a target voltage, and controlling a gate control signal driving said second switching element by determining a switching frequency of the second switching element such that the temperature of said motor winding is equal to a second target temperature and by determining a modulation wave amplitude of the pulse width modulation DC-AC conversion circuit such that the detected output current of the pulse width modulation DC-AC conversion circuit is equal to a target current.
A semiconductor circuit uses two PWM converters. A DC-DC converter (with a first switching element and a reactor) converts a DC input to a different DC output voltage. A DC-AC converter (with a second switching element) converts the DC output from the first converter into AC to drive a motor winding. The circuit monitors the temperature of the reactor and the motor winding separately. A controller adjusts the switching frequency and duty cycle of the first switching element to maintain the reactor at a target temperature and the DC-DC converter output voltage at a target value. It also adjusts the switching frequency and modulation amplitude of the second switching element to maintain the motor winding at a target temperature and the DC-AC converter output current at a target value.
7. The semiconductor circuit device according to claim 6 , further comprising: a first element temperature monitoring unit detecting or estimating a temperature of said first switching element; a second element temperature monitoring unit detecting or estimating a temperature of said second switching element; a first switching time adjusting unit adjusting switching time of said first switching element; and a second switching time adjusting unit adjusting switching time of said second switching element, wherein said control unit further instructs said first switching time adjusting unit to adjust the switching time of said first switching element such that the temperature of said first switching element is equal to a third target temperature, and instructs said second switching time adjusting unit to adjust the switching time of said second switching element such that the temperature of said second switching element is equal to a fourth target temperature.
The semiconductor circuit with cascaded DC-DC and DC-AC converters described previously also monitors and controls the temperatures of the switching elements. It includes temperature sensors for both switching elements in the DC-DC and DC-AC converters. It includes circuits to adjust the switching times of both switching elements. The controller adjusts the switching time of the first switching element to maintain its temperature at a third target value, and independently adjusts the switching time of the second switching element to maintain its temperature at a fourth target value.
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March 8, 2011
July 23, 2013
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