A semiconductor substrate which allows desired electrical characteristics to be more easily acquired, a semiconductor device of the same, and a method of producing the semiconductor substrate. The method of producing this semiconductor substrate is provided with: a first epitaxial layer forming step (S1) of forming a first epitaxial layer; a trench forming step (S2) of forming trenches in the first epitaxial layer; and epitaxial layer forming steps (S3, S4, S5) of forming epitaxial layers on the first epitaxial layer and inside the trenches, using a plurality of growth conditions including differing growth rates, so as to fill the trenches, and keeping the concentration of dopant taken into the epitaxial layers constant in the plurality of growth conditions.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of producing a semiconductor substrate, the method comprising: a first epitaxial layer forming step of forming a first epitaxial layer by introducing a dopant gas of a first conductivity type to a semiconductor substrate of the first conductivity type; a trench forming step of forming a trench in the first epitaxial layer; and a second epitaxial layer forming step of forming a second epitaxial layer on the first epitaxial layer and in the trench, by introducing a dopant gas of a second conductivity type that is different from the first conductivity type at a predetermined first dopant gas flow rate, in an atmosphere of a predetermined first temperature; a third epitaxial layer forming step of forming a third epitaxial layer to fill up the trench, by introducing the dopant gas of the second conductivity type to the second epitaxial layer at a second dopant gas flow rate that is greater than the first dopant gas flow rate, in an atmosphere of a second temperature that is lower than the first temperature; a fourth epitaxial layer forming step of forming a fourth epitaxial layer by introducing the dopant gas of the second conductivity type to the second epitaxial layer and the third epitaxial layer at a third dopant gas flow rate that is lower than the second dopant gas flow rate, in an atmosphere of a third temperature that is higher than the second temperature.
2. The method of producing a semiconductor substrate according to claim 1 , wherein amount of dopant in the second epitaxial layer, the third epitaxial layer, and the fourth epitaxial layer is changed by changing the flow rate of the dopant gas of the second conductivity type.
3. The method of producing a semiconductor substrate according to claim 1 , wherein amount of dopant in the second epitaxial layer, the third epitaxial layer, and the fourth epitaxial layer is changed by using a plurality of gas cylinders of different concentrations of the dopant gas of the second conductivity type.
4. The method of producing a semiconductor substrate according to claim 1 , wherein at least one of the second epitaxial layer, the third epitaxial layer and the fourth epitaxial layer is formed by feeding a material gas and a halide gas in parallel in the atmosphere.
5. The method of producing a semiconductor substrate according to claim 1 , wherein amount of dopant is substantially the same in the second epitaxial layer, the third epitaxial layer and the fourth epitaxial layer.
6. The method of producing a semiconductor substrate according to claim 1 , wherein a flow rate of a halide gas in the atmosphere is greater in the third epitaxial layer forming step than in the second epitaxial layer forming step and the fourth epitaxial layer forming step.
7. A semiconductor substrate, wherein the semiconductor substrate is manufactured by the method of producing a semiconductor substrate according to claim 1 .
8. A semiconductor device, wherein the semiconductor substrate according to claim 7 is used.
9. A method of producing a semiconductor substrate, the method comprising: a first epitaxial layer forming step of forming a first epitaxial layer by introducing a dopant gas of a first conductivity type to a semiconductor substrate of the first conductivity type; a trench forming step of forming a trench in the first epitaxial layer; a second epitaxial layer forming step of forming a second epitaxial layer on the first epitaxial layer and in the trench, by introducing a dopant gas of a second conductivity type that is different from the first conductivity type at a predetermined first dopant gas flow rate, in an atmosphere of a predetermined first temperature; and a third epitaxial layer forming step of forming a third epitaxial layer to fill up the trench, by introducing the dopant gas of the second conductivity type to the second epitaxial layer at a second dopant gas flow rate that is greater than the first dopant gas flow rate, in an atmosphere of a second temperature that is higher than the first temperature.
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March 25, 2010
August 6, 2013
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