Semiconductor component with vertical structures having a high aspect ratio and method

1. A semiconductor component comprising: a drift zone, arranged between a first component zone and a drain zone; a drift control zone arranged adjacent to the drift zone in a first direction; and a dielectric layer arranged between the drift zone and the drift control zone, wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric, wherein the drift zone has at least one first section and a second section adjoining the first section in the first direction, the second section doped with dopant atoms of a type complementary to the first section, wherein the drift control zone is coupled to the drain zone through a diode, and wherein the diode includes a first diode zone doped complementarily to the drain zone and a second diode zone doped complementarily to the first diode zone.

2. The semiconductor component of claim 1 , wherein the doping concentration of the second section is chosen in such a way that it has at least in sections, a higher voltage loading capacity than the first section.

3. The semiconductor component of claim 1 , wherein a doping concentration of the second section changes continuously in a direction of the dielectric layer.

4. The semiconductor component of claim 1 , wherein the dielectric layer has a thickness of 30 nm to 200 nm.

5. The semiconductor component of claim 1 , comprising wherein the first section has a first material composition and the second section has at least a second material composition.

6. The semiconductor component of claim 5 , comprising wherein the second section has a first layer composed of Si x Ge 1-x , where 0.7<x≦1, and a layer composed of silicon or Si y Ge 1-y where 0.7<y≦1 and x<y which is arranged between the first layer and the dielectric layer.

7. The semiconductor component of claim 5 , comprising wherein the second section has a first layer composed of silicon or Si x Ge 1-x , where 0.7<x≦1, and layer of Si y Ge 1-y where 0.7<y≦1 and x>y, which is arranged between the first layer and the dielectric layer.

8. The semiconductor component of claim 7 , comprising wherein the thickness of the second layer in the first direction is between 10 nm and 300 nm.

9. The semiconductor component of claim 7 , comprising wherein the dielectric layer has a thickness of 50 nm to 140 nm.

10. The semiconductor component of claim 5 , comprising wherein the first section is composed of silicon-germanium.

11. The semiconductor component of claim 1 , comprising wherein the first section is composed of silicon and the second section is composed of silicon-germanium.

12. The semiconductor component of claim 11 , comprising wherein germanium content in the second section decreases in a direction of the dielectric layer.

13. The semiconductor component of claim 12 , comprising wherein the second section has a layer composed of silicon directly adjoining the dielectric layer.

14. The semiconductor component of claim 12 , comprising wherein the second section has a layer composed of silicon at a distance from the dielectric layer.

15. A semiconductor component comprising: a drift zone, arranged between a first component zone and a second component zone; a drift control zone arranged adjacent to the drift zone in a first direction; and a dielectric layer arranged between the drift zone and the drift control zone, wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric, wherein the drift zone has at least one first section and a second section adjoining the first section in the first direction, the second section doped with dopant atoms of a type complementary to the first section, wherein the doping concentration of the second section is chosen in such a way that it has at least in sections, a higher voltage loading capacity than the first section, and wherein a doping concentration of the second section changes continuously in a direction of the dielectric layer until an extremum is reached, wherein the extremum is reached at a distance from the dielectric layer, and changes continuously in a direction of the dielectric layer proceeding from the extremum.