A three-layer magnetic element comprises, on a substrate, a first oxide, hydride or nitride layer O having a metal magnetic layer M mounted thereon, the latter having either a second oxide, hydride or nitride layer O′, or a non-ferromagnetic metal layer M′ mounted thereon. Layer M is continuous, has a thickness of 1 to 5 nm and the magnetization thereof is parallel to the layer plane in the absence of layers O and O′. There is, for a range of temperature equal to or greater than ambient temperature, interfacial magnetic anisotropy perpendicular to the layer plane on interfaces O/M and M/O′ that is capable of decreasing the effective demagnetizing field of layer M or orienting the magnetization of layer M in a manner substantially perpendicular to the layer plane.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A three-layer magnetic element with a reduced effective demagnetising field or out-of-plane magnetisation comprising, on a substrate, a first oxide, hydride or nitride layer O having a metal magnetic layer M mounted thereon, the latter having either a second oxide, hydride or nitride layer O′, or a non-ferromagnetic metal layer M′ mounted thereon: wherein the layer M is continuous and has a thickness of 1 to 5 nm, and wherein there is, for a range of temperature equal to or greater than ambient temperature, interfacial magnetic anisotropy perpendicular to the layer plane on interfaces O/M and M/O′ that is configured to decrease the effective demagnetising field of layer M or to orient the magnetisation of layer M in a manner substantially perpendicular to the layer plane.
2. The three-layer magnetic element as claimed in claim 1 : wherein the magnetic metal layer M consists of a magnetic material, a magnetic alloy or a multilayer formed by an alternating sequence of non-magnetic and magnetic materials, the latter being selected from the group comprising Fe, Ni, Co or alloys thereof, and wherein the oxide, hydride or nitride layer(s) O and O′ has/have a thickness of at least 0.3 nm and is/are based on elements selected from the group comprising Al, Mg, Ru, Ta, Cr, Zr, Hf, Ti, V, Si, Cu, W, Co, Ni, Fe or alloys thereof, or any material or alloy configured to form stable oxides, hydrides or nitrides.
3. The three-layer magnetic element as claimed in claim 1 , wherein the substrate is made of silicon covered in thermally or naturally oxidized or nitrided silicon to a depth of 1 to 500 nm.
4. The three-layer magnetic element as claimed in claim 1 , wherein the substrate is made of a transparent material.
5. The three-layer magnetic element as recited in claim 4 , wherein the transparent material comprises at least one from the group consisting of glass and magnesium oxide.
6. The three-layer magnetic element as claimed in claim 1 , wherein the substrate acts as first layer O.
7. The three-layer magnetic element as claimed in claim 6 : wherein the metal magnetic layer M has a thickness of 1 to 5 nm, and wherein layers O and O′ have a thickness of 0.3 to 5 nm.
8. The three-layer magnetic element as claimed in claim 1 , wherein the layer M contains added non-magnetic metals Pd or Pt or elements selected from the group comprising Si, C, B, P.
9. The three-layer magnetic element as claimed in claim 1 , wherein layers O and O′ are made of the same non-magnetic material.
10. The three-layer magnetic element as claimed in claim 1 , wherein layers O and O′ have the same thickness.
11. The three-layer magnetic element as claimed in claim 1 , wherein the thicknesses of layers O and O′ are different.
12. The three-layer magnetic element as claimed in claim 1 , wherein the chemical compositions of layers O and O′ are different.
13. The three-layer magnetic element as claimed in claim 1 , wherein at least one of layers O and O′ itself consists of a plurality of layers made of oxide, hydride or nitride.
14. The three-layer magnetic element as claimed in claim 1 , wherein non-ferromagnetic layer M′ is made of an antiferromagnetic material known to induce exchange anisotropy coupling with magnetic layer M.
15. The three-layer magnetic element as claimed in claim 14 , wherein a non-magnetic metal layer having a thickness of 0.1 to 1 nm is inserted between layer M and layer M′ to induce exchange anisotropy coupling with said layer M.
16. The three-layer magnetic element as recited in claim 14 , wherein the antiferromagnetic material comprises at least one from the group consisting of FeMn, IrMn, PtMn, and NiMn.
17. The three-layer magnetic element as claimed in claim 1 , wherein said element is itself deposited on top of a first magnetic layer that also has either a reduced effective demagnetising field or magnetisation oriented substantially perpendicular to the layer plane.
18. The three-layer magnetic element as claimed in claim 1 , wherein lateral dimensions of the three-layer magnetic element are less than 1 μm.
19. A magnetic field sensor consisting of a three-layer magnetic element as claimed in claim 1 having a perpendicular anisotropy field that almost counterbalances its demagnetising field.
20. A method for using a magnetic field sensor as claimed in claim 19 , wherein the orientation of the magnetisation of the metal magnetic layer M of the magnetic element is detected by measuring an extraordinary Hall effect by injecting an electric current in a direction parallel to the layer plane.
21. A method for using a magnetic field sensor as claimed in claim 19 , wherein the orientation of the magnetisation of the metal magnetic layer M of the magnetic element is detected by measuring a Kerr effect or a Faraday magneto-optical effect.
22. A method for using a magnetic field sensor as claimed in claim 19 , wherein the orientation of the magnetisation of the metal magnetic layer M of the magnetic element is detected by measuring a magnetoresistance by injecting an electric current in a direction that is substantially perpendicular to the layer plane.
23. A magnetic memory consisting of a three-layer magnetic element as claimed in claim 1 in which magnetisation of the metal magnetic layer M is perpendicular to the layer plane in the absence of any external magnetic field.
24. A method for using a magnetic memory as claimed in claim 23 , wherein the orientation of the magnetisation of the metal magnetic layer M of the magnetic element is detected by measuring a magnetoresistance of a magnetoresistive sensor located close to the magnetic element.
25. A magnetic memory consisting of a three-layer magnetic element as claimed in claim 1 in which magnetisation of the metal magnetic layer M is perpendicular to the layer plane in the form of magnetic domains that point alternately downwards and upwards.
26. A magnetic logic gate consisting of a three-layer magnetic element as claimed in claim 1 in which magnetisation of the metal magnetic layer M is perpendicular to the layer plane in the absence of any external magnetic field.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
October 13, 2010
August 20, 2013
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