A three-layer magnetic element comprises, on a substrate, a first oxide, hydride or nitride layer O having a metal magnetic layer M mounted thereon, the latter having either a second oxide, hydride or nitride layer O′, or a non-ferromagnetic metal layer M′ mounted thereon. Layer M is continuous, has a thickness of 1 to 5 nm and the magnetization thereof is parallel to the layer plane in the absence of layers O and O′. There is, for a range of temperature equal to or greater than ambient temperature, interfacial magnetic anisotropy perpendicular to the layer plane on interfaces O/M and M/O′ that is capable of decreasing the effective demagnetizing field of layer M or orienting the magnetization of layer M in a manner substantially perpendicular to the layer plane.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A three-layer magnetic element with a reduced effective demagnetising field or out-of-plane magnetisation comprising, on a substrate, a first oxide, hydride or nitride layer O having a metal magnetic layer M mounted thereon, the latter having either a second oxide, hydride or nitride layer O′, or a non-ferromagnetic metal layer M′ mounted thereon: wherein the layer M is continuous and has a thickness of 1 to 5 nm, and wherein there is, for a range of temperature equal to or greater than ambient temperature, interfacial magnetic anisotropy perpendicular to the layer plane on interfaces O/M and M/O′ that is configured to decrease the effective demagnetising field of layer M or to orient the magnetisation of layer M in a manner substantially perpendicular to the layer plane.
A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane.
2. The three-layer magnetic element as claimed in claim 1 : wherein the magnetic metal layer M consists of a magnetic material, a magnetic alloy or a multilayer formed by an alternating sequence of non-magnetic and magnetic materials, the latter being selected from the group comprising Fe, Ni, Co or alloys thereof, and wherein the oxide, hydride or nitride layer(s) O and O′ has/have a thickness of at least 0.3 nm and is/are based on elements selected from the group comprising Al, Mg, Ru, Ta, Cr, Zr, Hf, Ti, V, Si, Cu, W, Co, Ni, Fe or alloys thereof, or any material or alloy configured to form stable oxides, hydrides or nitrides.
This invention relates to a three-layer magnetic element designed for enhanced magnetic properties and stability. The element addresses challenges in magnetic materials, such as susceptibility to oxidation, degradation, and performance loss in applications like sensors, memory devices, and spintronic components. The element consists of a central magnetic metal layer (M) sandwiched between two oxide, hydride, or nitride layers (O and O′). The magnetic layer (M) is composed of a magnetic material, alloy, or a multilayer structure with alternating non-magnetic and magnetic layers. The magnetic materials used include Fe, Ni, Co, or their alloys. The oxide, hydride, or nitride layers (O and O′) have a minimum thickness of 0.3 nm and are formed from elements such as Al, Mg, Ru, Ta, Cr, Zr, Hf, Ti, V, Si, Cu, W, Co, Ni, Fe, or their alloys. These layers can also be made from any material or alloy capable of forming stable oxides, hydrides, or nitrides. The design ensures improved magnetic performance by protecting the central magnetic layer from environmental degradation while maintaining its magnetic properties. The oxide, hydride, or nitride layers act as barriers, enhancing stability and durability in various applications. This structure is particularly useful in high-performance magnetic devices where longevity and reliability are critical.
3. The three-layer magnetic element as claimed in claim 1 , wherein the substrate is made of silicon covered in thermally or naturally oxidized or nitrided silicon to a depth of 1 to 500 nm.
The three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) utilizes a substrate constructed from silicon covered with a thermally or naturally oxidized or nitrided silicon layer, with the oxide/nitride layer having a thickness of 1 to 500 nm.
4. The three-layer magnetic element as claimed in claim 1 , wherein the substrate is made of a transparent material.
The three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) uses a substrate constructed of a transparent material.
5. The three-layer magnetic element as recited in claim 4 , wherein the transparent material comprises at least one from the group consisting of glass and magnesium oxide.
The three-layer magnetic element (as described in claim 4: The three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization consisting of, on a substrate of transparent material: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) uses glass or magnesium oxide as the transparent material for the substrate.
6. The three-layer magnetic element as claimed in claim 1 , wherein the substrate acts as first layer O.
In this three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane), the substrate itself functions as the first layer O (oxide, hydride, or nitride).
7. The three-layer magnetic element as claimed in claim 6 : wherein the metal magnetic layer M has a thickness of 1 to 5 nm, and wherein layers O and O′ have a thickness of 0.3 to 5 nm.
The three-layer magnetic element (as described in claim 6: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization, where the substrate functions as the first oxide, hydride, or nitride layer (O); a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) where the metal magnetic layer M is 1 to 5 nm thick, and the oxide/hydride/nitride layers O and O' are between 0.3 and 5 nm thick.
8. The three-layer magnetic element as claimed in claim 1 , wherein the layer M contains added non-magnetic metals Pd or Pt or elements selected from the group comprising Si, C, B, P.
The three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) contains added non-magnetic metals (Pd or Pt) or elements (Si, C, B, P) within the metal magnetic layer M.
9. The three-layer magnetic element as claimed in claim 1 , wherein layers O and O′ are made of the same non-magnetic material.
The three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) uses the same non-magnetic material for both oxide, hydride, or nitride layers O and O'.
10. The three-layer magnetic element as claimed in claim 1 , wherein layers O and O′ have the same thickness.
The three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) has oxide, hydride, or nitride layers O and O' that have the same thickness.
11. The three-layer magnetic element as claimed in claim 1 , wherein the thicknesses of layers O and O′ are different.
The three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) has oxide, hydride, or nitride layers O and O' with different thicknesses.
12. The three-layer magnetic element as claimed in claim 1 , wherein the chemical compositions of layers O and O′ are different.
The three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) has oxide, hydride, or nitride layers O and O' with different chemical compositions.
13. The three-layer magnetic element as claimed in claim 1 , wherein at least one of layers O and O′ itself consists of a plurality of layers made of oxide, hydride or nitride.
The three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) has at least one of the oxide, hydride, or nitride layers O and O' consisting of multiple sub-layers made of oxide, hydride, or nitride.
14. The three-layer magnetic element as claimed in claim 1 , wherein non-ferromagnetic layer M′ is made of an antiferromagnetic material known to induce exchange anisotropy coupling with magnetic layer M.
The three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) uses a non-ferromagnetic layer M' made of an antiferromagnetic material. This material induces exchange anisotropy coupling with the magnetic layer M.
15. The three-layer magnetic element as claimed in claim 14 , wherein a non-magnetic metal layer having a thickness of 0.1 to 1 nm is inserted between layer M and layer M′ to induce exchange anisotropy coupling with said layer M.
In the three-layer magnetic element (as described in claim 14: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization, using a non-ferromagnetic layer M' made of an antiferromagnetic material. This material induces exchange anisotropy coupling with the magnetic layer M. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane), a non-magnetic metal layer with a thickness of 0.1 to 1 nm is inserted between the magnetic layer M and the antiferromagnetic layer M'. This insertion induces exchange anisotropy coupling with layer M.
16. The three-layer magnetic element as recited in claim 14 , wherein the antiferromagnetic material comprises at least one from the group consisting of FeMn, IrMn, PtMn, and NiMn.
The three-layer magnetic element (as described in claim 14: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization, using a non-ferromagnetic layer M' made of an antiferromagnetic material. This material induces exchange anisotropy coupling with the magnetic layer M. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) uses FeMn, IrMn, PtMn, or NiMn as the antiferromagnetic material for layer M'.
17. The three-layer magnetic element as claimed in claim 1 , wherein said element is itself deposited on top of a first magnetic layer that also has either a reduced effective demagnetising field or magnetisation oriented substantially perpendicular to the layer plane.
The three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) is deposited on top of another magnetic layer. This underlying magnetic layer also exhibits either a reduced effective demagnetizing field or magnetization oriented substantially perpendicular to its layer plane.
18. The three-layer magnetic element as claimed in claim 1 , wherein lateral dimensions of the three-layer magnetic element are less than 1 μm.
The three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) has lateral dimensions less than 1 μm.
19. A magnetic field sensor consisting of a three-layer magnetic element as claimed in claim 1 having a perpendicular anisotropy field that almost counterbalances its demagnetising field.
A magnetic field sensor utilizes the three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) with a perpendicular anisotropy field that nearly counterbalances its demagnetizing field. This configuration allows for highly sensitive magnetic field detection.
20. A method for using a magnetic field sensor as claimed in claim 19 , wherein the orientation of the magnetisation of the metal magnetic layer M of the magnetic element is detected by measuring an extraordinary Hall effect by injecting an electric current in a direction parallel to the layer plane.
A method for using the magnetic field sensor (consisting of a three-layer magnetic element with a perpendicular anisotropy field that almost counterbalances its demagnetising field, which is designed to reduce demagnetization effects or achieve out-of-plane magnetization and consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) detects the orientation of the metal magnetic layer M's magnetization by measuring the extraordinary Hall effect. This measurement is performed by injecting an electric current parallel to the layer plane.
21. A method for using a magnetic field sensor as claimed in claim 19 , wherein the orientation of the magnetisation of the metal magnetic layer M of the magnetic element is detected by measuring a Kerr effect or a Faraday magneto-optical effect.
A method for using the magnetic field sensor (consisting of a three-layer magnetic element with a perpendicular anisotropy field that almost counterbalances its demagnetising field, which is designed to reduce demagnetization effects or achieve out-of-plane magnetization and consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) detects the orientation of the metal magnetic layer M's magnetization by measuring the Kerr effect or the Faraday magneto-optical effect.
22. A method for using a magnetic field sensor as claimed in claim 19 , wherein the orientation of the magnetisation of the metal magnetic layer M of the magnetic element is detected by measuring a magnetoresistance by injecting an electric current in a direction that is substantially perpendicular to the layer plane.
A method for using the magnetic field sensor (consisting of a three-layer magnetic element with a perpendicular anisotropy field that almost counterbalances its demagnetising field, which is designed to reduce demagnetization effects or achieve out-of-plane magnetization and consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) detects the orientation of the metal magnetic layer M's magnetization by measuring magnetoresistance. An electric current is injected in a direction substantially perpendicular to the layer plane to perform the magnetoresistance measurement.
23. A magnetic memory consisting of a three-layer magnetic element as claimed in claim 1 in which magnetisation of the metal magnetic layer M is perpendicular to the layer plane in the absence of any external magnetic field.
A magnetic memory device uses the three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) in which the magnetization of the metal magnetic layer M is perpendicular to the layer plane without any external magnetic field applied. This allows for stable data storage.
24. A method for using a magnetic memory as claimed in claim 23 , wherein the orientation of the magnetisation of the metal magnetic layer M of the magnetic element is detected by measuring a magnetoresistance of a magnetoresistive sensor located close to the magnetic element.
A method for using a magnetic memory (consisting of a three-layer magnetic element in which magnetisation of the metal magnetic layer M is perpendicular to the layer plane in the absence of any external magnetic field, which is designed to reduce demagnetization effects or achieve out-of-plane magnetization and consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) detects the orientation of the metal magnetic layer M's magnetization by measuring the magnetoresistance of a magnetoresistive sensor located close to the magnetic element. This detects the stored data.
25. A magnetic memory consisting of a three-layer magnetic element as claimed in claim 1 in which magnetisation of the metal magnetic layer M is perpendicular to the layer plane in the form of magnetic domains that point alternately downwards and upwards.
A magnetic memory device uses the three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) in which the magnetization of the metal magnetic layer M is perpendicular to the layer plane, forming magnetic domains that point alternately downwards and upwards.
26. A magnetic logic gate consisting of a three-layer magnetic element as claimed in claim 1 in which magnetisation of the metal magnetic layer M is perpendicular to the layer plane in the absence of any external magnetic field.
A magnetic logic gate uses the three-layer magnetic element (as described in claim 1: A three-layer magnetic element designed to reduce demagnetization effects or achieve out-of-plane magnetization. It consists of, on a substrate: a first layer (O) made of oxide, hydride, or nitride; a continuous metal magnetic layer (M) with a thickness of 1-5 nm on top of layer O; and either a second oxide, hydride, or nitride layer (O'), or a non-ferromagnetic metal layer (M') on top of layer M. The interfaces between O/M and M/O' exhibit interfacial magnetic anisotropy perpendicular to the layer plane at or above ambient temperature. This anisotropy reduces the effective demagnetizing field of layer M or aligns its magnetization substantially perpendicular to the layer plane) in which the magnetization of the metal magnetic layer M is perpendicular to the layer plane without any external magnetic field applied. The magnetization states are used to represent logic values.
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October 13, 2010
August 20, 2013
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