A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace, an adhesive and a support layer. The heat spreader includes a post, a base, an underlayer and a thermal via. The conductive trace includes a pad and a terminal. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The post extends upwardly from the base into an opening in the adhesive, the base extends laterally from the post, the support layer is sandwiched between the base and the underlayer and the thermal via extends from the base through the support layer to the underlayer. The conductive trace provides signal routing between the pad and the terminal.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A semiconductor chip assembly, comprising: a semiconductor device; an adhesive that includes an opening; a support layer; a heat spreader that includes a post, a base, a cap, an underlayer and a thermal via, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction, extends laterally from the post in lateral directions orthogonal to the upward and downward directions and is sandwiched between the post and the underlayer, (iii) the cap extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post, (iv) the underlayer extends below and is spaced from the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the thermal via extends from the base to the underlayer, is spaced from and laterally offset from the post and the cap and provides a thermally conductive path between the base and the underlayer; and a conductive trace that includes a pad and a terminal; wherein the semiconductor device is mounted on the cap, overlaps the post, the base, the cap, the support layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal and is thermally connected to the cap and thereby thermally connected to the underlayer; wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad; wherein the support layer is sandwiched between the base and the underlayer, covers the post in the downward direction and extends laterally beyond the post; wherein the post extends into the opening, the base is sandwiched between the adhesive and the support layer, the cap overlaps the adhesive, the thermal via extends through the support layer and the underlayer extends below the semiconductor device, the support layer and the pad; and wherein the post, the base, the cap and the underlayer are metallic and the support layer is non-metallic, wherein the thermal via includes a plated through-hole that is metallurgically bonded to the base and the underlayer, extends above the post and the adhesive and extends through the base and the adhesive.
A semiconductor chip assembly combines a semiconductor device with a heat spreader for thermal management and a conductive trace for electrical connection. The heat spreader comprises a post, a base, a cap, an underlayer, and a thermal via. The post is integral to the base and extends upwards; the base extends laterally from the post and sits between the post and underlayer. A cap covers the top of the post and also extends laterally. The underlayer is spaced below the base, covering the post and extending laterally. A thermal via conducts heat from the base to the underlayer. The semiconductor device attaches to the cap, connecting electrically to a pad on the conductive trace. An adhesive fills the space between the base and the pad, with the post protruding into an opening within it. The post, base, cap and underlayer are metallic, the support layer is non-metallic, and the thermal via is a plated through-hole that is metallurgically bonded to the base and the underlayer.
2. The assembly of claim 1 , wherein the semiconductor device is an LED chip.
The semiconductor chip assembly, as previously described, uses an LED chip as the semiconductor device. This LED chip is mounted on the cap of the heat spreader and electrically connected to the conductive trace for operation.
3. The assembly of claim 1 , wherein the semiconductor device is electrically connected to the pad using a wire bond and is thermally connected to the cap using a die attach.
The semiconductor chip assembly, as previously described, uses a wire bond to electrically connect the semiconductor device to the pad on the conductive trace. A die attach material is used to thermally connect the semiconductor device to the cap of the heat spreader. This provides both electrical and thermal pathways for the semiconductor device.
4. The assembly of claim 1 , wherein the semiconductor device is electrically connected to the pad using a first solder joint and is thermally connected to the cap using a second solder joint.
The semiconductor chip assembly, as previously described, employs solder joints for both electrical and thermal connections. A first solder joint electrically connects the semiconductor device to the pad, while a second solder joint thermally connects the device to the cap. This provides reliable electrical and thermal pathways for the semiconductor device.
5. The assembly of claim 1 , wherein the adhesive contacts the post, the base, the cap and the thermal via, is spaced from the support layer and the underlayer, covers and surrounds the post in the lateral directions and extends to peripheral edges of the assembly.
In the semiconductor chip assembly, as previously described, the adhesive makes direct contact with the post, base, cap, and thermal via. The adhesive is spaced away from the support layer and underlayer. It also encloses the post laterally and extends to the edges of the assembly.
6. The assembly of claim 1 , wherein the post has a diameter that decreases as it extends upwardly from the base to the cap.
In the semiconductor chip assembly, as previously described, the post has a decreasing diameter as it extends upwards from the base towards the cap. The post's shape is tapered, becoming narrower with height.
7. The assembly of claim 1 , wherein the post is coplanar with the adhesive at the base and at the cap.
In the semiconductor chip assembly, as previously described, the top and bottom of the post are flush with the adhesive material at both the base and the cap. The post surface at these interfaces is coplanar with the surrounding adhesive.
8. The assembly of claim 1 , wherein the base, the adhesive, the support layer and the underlayer cover the conductive trace in the downward direction and extend to peripheral edges of the assembly.
In the semiconductor chip assembly, as previously described, the base, adhesive, support layer, and underlayer completely cover the conductive trace from above, extending outwards to the assembly's edges. This provides physical protection and electrical insulation for the trace.
9. The assembly of claim 1 , wherein the pad and the terminal extend above the adhesive, have the same thickness and are coplanar with one another.
In the semiconductor chip assembly, as previously described, the pad and the terminal of the conductive trace protrude above the adhesive layer. These pad and terminal components are of equal thickness and aligned on the same plane.
10. The assembly of claim 1 , wherein the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another.
In the semiconductor chip assembly, as previously described, the pad and the cap share the same thickness where they are closest together. However, their thicknesses differ in the area where the cap adjoins the post. Despite these differences, the pad and the cap remain on the same plane.
11. The assembly of claim 1 , wherein the pad, the terminal, the cap and the thermal via extend above the post and the adhesive, the thermal via extends through the base and the adhesive, the pad and the terminal have the same thickness and are coplanar with one another and the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another.
The semiconductor chip assembly, as previously described, features a pad, terminal, cap, and thermal via that all extend above both the post and the adhesive layer. The thermal via passes through the base and the adhesive. The pad and terminal are of identical thickness and lie on the same plane. While the pad and cap have similar thicknesses where nearest, they differ in thickness at the cap's post-adjacent region; however, both are coplanar.
12. The assembly of claim 1 , wherein the pad, the terminal, the cap and the underlayer are the same metals and the post and the base are the same metal.
In the semiconductor chip assembly, as previously described, the pad, terminal, cap, and underlayer are constructed from the same metallic materials. Separately, the post and the base are also formed from the same metal.
13. The assembly of claim 1 , wherein the pad, the terminal, the cap and the underlayer include a gold, silver or nickel surface layer and a buried copper core and are primarily copper, the post and the base are copper, the thermal via includes copper and the support layer includes plastic.
In the semiconductor chip assembly, as previously described, the pad, terminal, cap, and underlayer are primarily made of copper, featuring a buried copper core and a surface layer of gold, silver, or nickel. The post and the base are made of copper, the thermal via includes copper, and the support layer uses plastic.
14. The assembly of claim 1 , wherein the conductive trace includes a copper core shared by the pad and the terminal and the heat spreader includes a copper core shared by the post, the base, the cap, the underlayer and the thermal via.
In the semiconductor chip assembly, as previously described, the conductive trace utilizes a copper core shared by the pad and terminal. The heat spreader has a copper core shared by the post, base, cap, underlayer, and thermal via.
15. A semiconductor chip assembly, comprising: a semiconductor device; an adhesive that includes an opening; a support layer; a heat spreader that includes a post, a base, a cap, an underlayer and a thermal via, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction, extends laterally from the post in lateral directions orthogonal to the upward and downward directions and is sandwiched between the post and the underlayer, (iii) the cap extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post, (iv) the underlayer extends below and is spaced from the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the thermal via includes a plated through-hole that extends from the base to the underlayer, is metallurgically bonded to the base and the underlayer and provides a thermally conductive path between the base and the underlayer and the thermal via is spaced from and laterally offset from the post and the cap and provides no electrical function; and a conductive trace that includes a pad, a terminal and a routing line, wherein the routing line provides an electrically conductive path between the pad and the terminal; wherein the semiconductor device is mounted on the cap, overlaps the post, the base, the cap, the support layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal and is thermally connected to the cap, thereby thermally connected to the post, thereby thermally connected to the base, thereby thermally connected to the thermal via and thereby thermally connected to the underlayer; wherein the adhesive is mounted on and extends above the base, contacts the post, the base, the cap and the thermal via, is spaced from the support layer and the underlayer, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad and between the base and the terminal; and wherein the support layer is sandwiched between the base and the underlayer, covers the post in the downward direction and extends laterally beyond the post; wherein the pad, the terminal and the routing line are located above the base and extend above the adhesive; wherein the post extends into the opening, the base is sandwiched between the adhesive and the support layer and extends below the adhesive, the cap overlaps the adhesive, the plated through-hole extends through the base, the adhesive and the support layer and the underlayer extends below the semiconductor device, the support layer and the conductive trace; and wherein the post, the base, the cap and the underlayer are metallic and the support layer is non-metallic.
A semiconductor chip assembly includes a semiconductor device, adhesive, support layer, and a heat spreader with a post, base, cap, underlayer, and thermal via. The post is integral to the base and extends upwards; the base extends laterally from the post and sits between the post and underlayer. A cap covers the top of the post and also extends laterally. The underlayer is spaced below the base, covering the post and extending laterally. A thermal via conducts heat from the base to the underlayer but provides no electrical function. A conductive trace with a routing line provides a path between the pad and terminal. The device attaches to the cap, thermally connecting to the underlayer. The pad, terminal and routing line are located above the base and adhesive. The post, base, cap and underlayer are metallic, and the support layer is non-metallic.
16. The assembly of claim 15 , wherein the adhesive covers and surrounds the post in the lateral directions and extends to peripheral edges of the assembly.
In the semiconductor chip assembly, as previously described, the adhesive encapsulates the post laterally, extending to the assembly's edges. The adhesive covers and surrounds the post.
17. The assembly of claim 15 , wherein the post has a diameter that decreases as it extends upwardly from the base to the cap and is coplanar with the adhesive at the base and at the cap.
In the semiconductor chip assembly, as previously described, the post's diameter decreases from the base to the cap. The post's top and bottom are coplanar with the adhesive at both the base and cap.
18. The assembly of claim 15 , wherein the plated through-hole extends above the post and the adhesive.
In the semiconductor chip assembly, as previously described, the plated through-hole of the thermal via extends above both the post and the adhesive layer.
19. The assembly of claim 15 , wherein the plated through-hole is coplanar with the pad, the terminal and/or the routing line above the post and the adhesive.
In the semiconductor chip assembly, as previously described, the plated through-hole is coplanar with the pad, terminal, and/or the routing line above the post and the adhesive.
20. The assembly of claim 15 , wherein the base, the adhesive, the support layer and the underlayer cover the conductive trace in the downward direction and extend to peripheral edges of the assembly.
In the semiconductor chip assembly, as previously described, the base, adhesive, support layer, and underlayer cover the conductive trace completely from above, reaching to the assembly's peripheral edges.
21. The assembly of claim 15 , wherein the pad and the terminal have the same thickness and are coplanar with one another and the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another.
In the semiconductor chip assembly, as previously described, the pad and terminal are the same thickness and aligned on the same plane. Where the pad and cap are closest, they are the same thickness, but the thickness differs where the cap meets the post. Still, the pad and cap are coplanar.
22. The assembly of claim 15 , wherein the pad, the terminal, the cap and the underlayer are the same metals and the post and the base are the same metal.
In the semiconductor chip assembly, as previously described, the pad, terminal, cap, and underlayer are constructed from identical metals. Similarly, the post and base are fabricated from the same metal.
23. The assembly of claim 15 , wherein the pad, the terminal, the cap and the underlayer include a gold, silver or nickel surface layer and a buried copper core and are primarily copper, the post and the base are copper, the routing line and the thermal via include copper and the support layer includes plastic.
In the semiconductor chip assembly, as previously described, the pad, terminal, cap, and underlayer are primarily copper, with a gold, silver, or nickel surface layer. The post and base are copper. The routing line and thermal via include copper. The support layer is made of plastic.
24. The assembly of claim 15 , wherein the conductive trace includes a copper core shared by the pad, the terminal and the routing line and the heat spreader includes a copper core shared by the post, the base, the cap, the underlayer and the thermal via.
In the semiconductor chip assembly, as previously described, the conductive trace uses a copper core shared by the pad, terminal, and routing line. The heat spreader uses a copper core shared by the post, base, cap, underlayer, and thermal via.
25. A semiconductor chip assembly, comprising: a semiconductor device; an adhesive that includes an opening; a support layer; a heat spreader that includes a post, a base, a cap, an underlayer and a thermal via, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction, extends laterally from the post in lateral directions orthogonal to the upward and downward directions and is sandwiched between the post and the underlayer, (iii) the cap extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post, (iv) the underlayer extends below and is spaced from the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the thermal via includes a plated through-hole that extends from the base to the underlayer, is metallurgically bonded to the base and the underlayer and provides a thermally conductive path between the base and the underlayer and the thermal via is spaced from and laterally offset from the post and the cap and provides no electrical function; a substrate that includes a dielectric layer, wherein an aperture extends through the substrate; and a conductive trace that includes a pad, a terminal and a routing line, wherein the routing line provides an electrically conductive path between the pad and the terminal; wherein the semiconductor device is mounted on the cap, overlaps the post, the base, the cap, the support layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal and is thermally connected to the cap, thereby thermally connected to the post, thereby thermally connected to the base, thereby thermally connected to the thermal via and thereby thermally connected to the underlayer; wherein the adhesive is mounted on and extends above the base, contacts the post, the base, the cap and the thermal via, is spaced from the support layer and the underlayer, extends laterally from the post to or beyond the terminal and is sandwiched between the post and the dielectric layer, between the base and the dielectric layer, between the base and the pad and between the base and the terminal; wherein the substrate is mounted on the adhesive and extends above the base and the dielectric layer is sandwiched between the conductive trace and the adhesive; wherein the support layer is sandwiched between the base and the underlayer, covers the post in the downward direction and extends laterally beyond the post; wherein the pad, the terminal and the routing line are mounted on the dielectric layer and extend above the adhesive and the dielectric layer; wherein the post extends into the opening and the aperture and extends above and below the aperture, the base is sandwiched between the adhesive and the support layer and extends below the adhesive and the dielectric layer, the cap contacts and overlaps the adhesive and the dielectric layer, the plated through-hole extends through the base, the adhesive, the dielectric layer and the support layer and the underlayer extends below the semiconductor device, the support layer and the conductive trace; and wherein the post, the base, the cap and the underlayer are metallic and the support layer is non-metallic.
A semiconductor chip assembly contains a semiconductor device, adhesive, support layer, heat spreader with a post, base, cap, underlayer and thermal via, a substrate with a dielectric layer and aperture, and a conductive trace with a pad, terminal and routing line. The post is integral to the base and extends upwards; the base extends laterally from the post and sits between the post and underlayer. A cap covers the top of the post and also extends laterally. The underlayer is spaced below the base, covering the post and extending laterally. The thermal via conducts heat from the base to the underlayer but provides no electrical function. The device attaches to the cap, thermally connecting to the underlayer. The post, base, cap and underlayer are metallic and the support layer is non-metallic. The post extends into the opening/aperture and above/below the aperture.
26. The assembly of claim 25 , wherein the adhesive covers and surrounds the post in the lateral directions and extends to peripheral edges of the assembly.
In the semiconductor chip assembly, as previously described, the adhesive covers and surrounds the post in the lateral directions and extends to the assembly's peripheral edges.
27. The assembly of claim 25 , wherein the post has a diameter that decreases as it extends upwardly from the base to the cap and is coplanar with the adhesive at the base and at the cap.
In the semiconductor chip assembly, as previously described, the post has a diameter that decreases as it extends upward from the base to the cap. Also, it's coplanar with the adhesive at the base and cap.
28. The assembly of claim 25 , wherein the plated through-hole extends above the post and the adhesive.
A system for electronic component mounting involves a substrate with plated through-holes and conductive posts. The plated through-holes are filled with conductive material and extend above the substrate surface. Conductive posts are attached to the substrate, each post aligned with a plated through-hole. An adhesive layer bonds the posts to the substrate, ensuring electrical and mechanical connection. The plated through-hole extends above both the post and the adhesive, providing additional conductive material for enhanced electrical conductivity and structural reinforcement. This design improves reliability in high-stress applications by reducing mechanical strain and ensuring consistent electrical contact. The system is particularly useful in high-density interconnect applications where robust connections are critical. The plated through-hole's extension above the post and adhesive ensures redundancy in the conductive path, minimizing failure risks from thermal cycling or mechanical stress. The adhesive layer provides additional structural support while maintaining precise alignment of the conductive posts. This configuration enhances durability and performance in electronic assemblies subjected to harsh environmental conditions.
29. The assembly of claim 25 , wherein the plated through-hole is coplanar with the pad, the terminal and/or the routing line above the post and the adhesive.
In the semiconductor chip assembly, as previously described, the plated through-hole is coplanar with the pad, the terminal and/or the routing line above the post and the adhesive.
30. The assembly of claim 25 , wherein the base, the adhesive, the dielectric layer, the support layer and the underlayer cover the conductive trace in the downward direction and extend to peripheral edges of the assembly.
In the semiconductor chip assembly, as previously described, the base, the adhesive, the dielectric layer, the support layer and the underlayer cover the conductive trace in the downward direction and extend to peripheral edges of the assembly.
31. The assembly of claim 25 , wherein the pad and the terminal have the same thickness and are coplanar with one another and the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another.
In the semiconductor chip assembly, as previously described, the pad and the terminal have the same thickness and are coplanar. The pad and the cap have the same thickness where closest to one another, different thicknesses where the cap is adjacent to the post, and are coplanar with one another.
32. The assembly of claim 25 , wherein the pad, the terminal, the cap and the underlayer are the same metals and the post and the base are the same metal.
In the semiconductor chip assembly, as previously described, the pad, the terminal, the cap and the underlayer are the same metals and the post and the base are the same metal.
33. The assembly of claim 25 , wherein the pad, the terminal, the cap and the underlayer include a gold, silver or nickel surface layer and a buried copper core and are primarily copper, the post and the base are copper, the routing line and the thermal via include copper, the dielectric layer includes epoxy or polyimide and the support layer includes epoxy or polyimide.
In the semiconductor chip assembly, as previously described, the pad, the terminal, the cap and the underlayer include a gold, silver or nickel surface layer and a buried copper core and are primarily copper. The post and the base are copper, the routing line and the thermal via include copper, the dielectric layer includes epoxy or polyimide and the support layer includes epoxy or polyimide.
34. The assembly of claim 25 , wherein the conductive trace includes a copper core shared by the pad, the terminal and the routing line and the heat spreader includes a copper core shared by the post, the base, the cap, the underlayer and the thermal via.
In the semiconductor chip assembly, as previously described, the conductive trace includes a copper core shared by the pad, the terminal and the routing line and the heat spreader includes a copper core shared by the post, the base, the cap, the underlayer and the thermal via.
35. A semiconductor chip assembly, comprising: a semiconductor device; an adhesive that includes an opening; a support layer; a heat spreader that includes a post, a base, a cap, an underlayer and a thermal via, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction, extends laterally from the post in lateral directions orthogonal to the upward and downward directions and is sandwiched between the post and the underlayer, (iii) the cap extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post, (iv) the underlayer extends below and is spaced from the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the thermal via extends from the base to the underlayer, is spaced from and laterally offset from the post and the cap and provides a thermally conductive path between the base and the underlayer; and a conductive trace that includes a pad and a terminal; wherein the semiconductor device is mounted on the cap, overlaps the post, the base, the cap, the support layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal and is thermally connected to the cap and thereby thermally connected to the underlayer; wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad; wherein the support layer is sandwiched between the base and the underlayer, covers the post in the downward direction and extends laterally beyond the post; wherein the post extends into the opening, the base is sandwiched between the adhesive and the support layer, the cap overlaps the adhesive, the thermal via extends through the support layer and the underlayer extends below the semiconductor device, the support layer and the pad; and wherein the post, the base, the cap and the underlayer are metallic and the support layer is non-metallic; wherein the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another.
A semiconductor chip assembly combines a semiconductor device with a heat spreader and conductive trace. The heat spreader comprises a post, base, cap, underlayer, and thermal via. The post is integral to the base and extends upwards; the base extends laterally from the post and sits between the post and underlayer. A cap covers the top of the post and also extends laterally. The underlayer is spaced below the base, covering the post and extending laterally. The thermal via conducts heat from the base to the underlayer. The semiconductor device attaches to the cap, connecting electrically to a pad on the conductive trace. An adhesive fills the space between the base and the pad, with the post protruding into an opening within it. The post, base, cap and underlayer are metallic, the support layer is non-metallic. The pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another.
36. A semiconductor chip assembly, comprising: a semiconductor device; an adhesive that includes an opening; a support layer; a heat spreader that includes a post, a base, a cap, an underlayer and a thermal via, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction, extends laterally from the post in lateral directions orthogonal to the upward and downward directions and is sandwiched between the post and the underlayer, (iii) the cap extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post, (iv) the underlayer extends below and is spaced from the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the thermal via extends from the base to the underlayer, is spaced from and laterally offset from the post and the cap and provides a thermally conductive path between the base and the underlayer; and a conductive trace that includes a pad and a terminal; wherein the semiconductor device is mounted on the cap, overlaps the post, the base, the cap, the support layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal and is thermally connected to the cap and thereby thermally connected to the underlayer; wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad; wherein the support layer is sandwiched between the base and the underlayer, covers the post in the downward direction and extends laterally beyond the post; wherein the post extends into the opening, the base is sandwiched between the adhesive and the support layer, the cap overlaps the adhesive, the thermal via extends through the support layer and the underlayer extends below the semiconductor device, the support layer and the pad; and wherein the post, the base, the cap and the underlayer are metallic and the support layer is non-metallic; wherein the pad, the terminal, the cap and the thermal via extend above the post and the adhesive, the thermal via extends through the base and the adhesive, the pad and the terminal have the same thickness and are coplanar with one another and the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another.
A semiconductor chip assembly combines a semiconductor device with a heat spreader and conductive trace. The heat spreader comprises a post, base, cap, underlayer, and thermal via. The post is integral to the base and extends upwards; the base extends laterally from the post and sits between the post and underlayer. A cap covers the top of the post and also extends laterally. The underlayer is spaced below the base, covering the post and extending laterally. The thermal via conducts heat from the base to the underlayer. The semiconductor device attaches to the cap, connecting electrically to a pad on the conductive trace. An adhesive fills the space between the base and the pad, with the post protruding into an opening within it. The post, base, cap and underlayer are metallic, the support layer is non-metallic. The pad, terminal, cap, and thermal via extend above the post and the adhesive, the thermal via extends through the base and the adhesive, the pad and the terminal have the same thickness and are coplanar with one another and the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another.
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May 20, 2011
September 3, 2013
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