Methods for reducing electron beam induced damage on semiconductor substrates employ compositions such as small chain organic solvents and non-neutral pH solutions to reduce or eliminate charge imbalances on semiconductor substrates caused by electron beam inspection of the semiconductor substrates. Damage to semiconductor substrates by electron beam inspection processes may also be reduced by generating or otherwise forming passivation films on a semiconductor substrate following electron beam inspection.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for reducing damage to an electron beam inspected semiconductor substrate, comprising: exposing the electron beam inspected semiconductor substrate to at least one plasma deposition process to form at least one of an oxide material, a nitride material, and a passivation material on the electron beam inspected semiconductor substrate; and exposing the electron beam inspected semiconductor substrate to deionized water after forming the at least one of the oxide material, the nitride material, and the passivation material thereon.
2. The method of claim 1 , wherein exposing the electron beam inspected semiconductor substrate to at least one plasma deposition process comprises treating the electron beam inspected semiconductor substrate with an oxidizing plasma.
3. The method of claim 1 , wherein exposing the electron beam inspected semiconductor substrate to at least one plasma deposition process comprises treating the electron beam inspected semiconductor substrate with a nitriding plasma.
4. The method of claim 1 , wherein exposing the electron beam inspected semiconductor substrate to at least one plasma deposition process comprises treating the electron beam inspected semiconductor substrate with at least one plasma comprising at least one of argon, nitrogen, and oxygen.
5. The method of claim 4 , wherein treating the electron beam inspected semiconductor substrate with at least one plasma comprising at least one of argon, nitrogen, and oxygen comprises treating the electron beam inspected semiconductor substrate with a plasma comprising a mixture of at least two of argon, nitrogen, and oxygen.
6. The method of claim 1 , wherein exposing the electron beam inspected semiconductor substrate to at least one plasma deposition process comprises treating the electron beam inspected semiconductor substrate with at least one plasma configured to form the at least one of the passivation material, the oxide material, and the nitride material on the electron beam inspected semiconductor substrate.
7. The method of claim 6 , wherein treating the electron beam inspected semiconductor substrate with at least one plasma comprises treating the electron beam inspected semiconductor substrate with multiple plasmas.
8. The method of claim 1 , wherein exposing the electron beam inspected semiconductor substrate to at least one plasma deposition process comprises treating the electron beam inspected semiconductor substrate with at least one plasma configured to repair at least one of the passivation material, the oxide material, and the nitride material on the electron beam inspected semiconductor substrate.
9. The method of claim 1 , wherein exposing the electron beam inspected semiconductor substrate to at least one plasma deposition process comprises treating the electron beam inspected semiconductor substrate with at least one plasma configured to form the passivation material on the electron beam inspected semiconductor substrate.
10. The method of claim 1 , wherein exposing the electron beam inspected semiconductor substrate to at least one plasma deposition process comprises treating the electron beam inspected semiconductor substrate with at least one plasma configured to form the oxide material on the electron beam inspected semiconductor substrate.
11. The method of claim 1 , wherein exposing the electron beam inspected semiconductor substrate to at least one plasma deposition process comprises treating the electron beam inspected semiconductor substrate with at least one plasma configured to form the nitride material on the electron beam inspected semiconductor substrate.
12. A method for inspecting a semiconductor substrate during fabrication, comprising: exposing a semiconductor substrate to an electron beam inspection process; and exposing the semiconductor substrate to a nitriding plasma configured to form a nitride material on the semiconductor substrate and treat an electrical charge imbalance formed on the semiconductor substrate by the electron beam inspection process.
13. The method of claim 12 , further comprising performing an oxide formation process to form an oxide material over the semiconductor substrate.
14. The method of claim 12 , wherein exposing the semiconductor substrate to a nitriding plasma comprises exposing the semiconductor to a plasma comprising nitrogen.
15. The method of claim 12 , wherein exposing a semiconductor substrate to an electron beam inspection process comprises exposing oxides on the semiconductor substrate to the electron beam inspection process.
16. The method of claim 12 , wherein exposing the semiconductor substrate to a nitriding plasma comprises exposing a portion of the semiconductor substrate to the nitriding plasma to form the nitride material on the exposed portion of the semiconductor substrate.
17. The method of claim 12 , further comprising rinsing the semiconductor substrate after exposing the semiconductor substrate to the nitriding plasma.
18. A method for inspecting a semiconductor substrate, comprising: exposing a semiconductor substrate to an electron beam inspection process; and forming at least one of an oxide material, a nitride material, and a passivation material on the semiconductor substrate after exposing a semiconductor substrate to the electron beam inspection process to neutralize an electrical charge imbalance on the semiconductor substrate; and exposing the semiconductor substrate to deionized water after forming the at least one of the oxide material, the nitride material, and the passivation material on the semiconductor substrate.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 13, 2012
October 22, 2013
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