A system and method of matching multiple scanners using design and defect data are described. A golden wafer is processed using a golden tool. A second wafer is processed using a second tool. Both tools provide focus/exposure modulation. Wafer-level spatial signatures of critical structures for both wafers can be compared to evaluate the behavior of the scanners. Critical structures can be identified by binning defects on the golden wafer having similar patterns. In one embodiment, the signatures must match within a certain percentage or the second tool is characterized as a “no match”. Reticles can be compared in a similar manner, wherein the golden and second wafers are processed using a golden reticle and a second reticle, respectively.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for comparing scanners, the method comprising: processing a golden wafer using a golden tool, the processing including focus and exposure modulation; identifying defects on the golden wafer using design data and inspection data; binning the defects having similar patterns; identifying critical structures by reviewing binned defects; generating wafer-level spatial signatures of identified critical structures; processing a second wafer using a second tool; identifying defects on the second wafer using the design data; generating wafer-level spatial signatures of the second wafer using the identified critical structures; and comparing the wafer-level spatial signatures of the golden wafer and the second wafer to determine whether the second tool matches the golden tool within an allowable variance, which was set based on at least one of scorings and spatial distributions of the wafer-level spatial signatures of the golden wafer and the second wafer.
2. The method of claim 1 , wherein the second tool is the golden tool at a later point in time, thereby allowing monitoring of the golden tool.
3. The method of claim 1 , wherein identifying the critical structures includes a user review of SEM images of the defects.
4. The method of claim 1 , wherein a wafer-level spatial signature includes at least one of numerical, radial, quadrant, and specialized signatures.
5. A system for comparing scanners, the system comprising: a golden tool processor to process a golden wafer using a golden tool, the golden tool processor modulating exposure and focus on the golden wafer; a binning generator to receive defect data of the golden wafer and to group defects on the golden wafer into bins based on patterns; a first spatial signature generator to generate wafer-level spatial signatures of critical structures of the golden wafer, the critical structures being identified using the patterns; a secondary tool processor to process a second wafer using a secondary tool, the secondary tool processor modulating exposure and focus similarly to the golden tool processor; a second spatial signature generator to receive defect data of the second wafer and to generate wafer-level spatial signatures of the second wafer using the critical structures; and a comparator to compare the wafer-level spatial signatures of the golden wafer and the second wafer, the comparator using an allowable variance, which was set based on at least one of scorings and spatial distributions of the wafer-level spatial signatures of the golden wafer and the second wafer.
6. The system of claim 5 , wherein the first spatial signature generator receives SEM images of selected defects.
7. The system of claim 6 , wherein the selected defects are automatically selected based on a marginality of predetermined structures under various focus and exposure conditions.
8. The system of claim 5 , wherein the first spatial signature generator generates spatial signatures that are at least one of numerical, radial, quadrant, and specialized signatures.
9. The system of claim 5 , wherein the second spatial signature generator generates spatial signatures that are at least one of numerical, radial, quadrant, and specialized signatures.
10. A method for comparing reticles, the method comprising: processing a golden wafer using a golden reticle, the processing including focus and exposure modulation; identifying defects on the golden wafer using design data; binning the defects having similar patterns; identifying critical structures by reviewing binned defects; generating wafer-level spatial signatures of identified critical structures; processing a second wafer using a second reticle; identifying defects on the second wafer using the design data; generating wafer-level spatial signatures of the second wafer using the identified critical structures; and comparing the wafer-level spatial signatures of the golden wafer and the second wafer to determine whether the second reticle matches the golden reticle within an allowable variance, which was set based on at least one of scorings and spatial distributions of the wafer-level spatial signatures of the golden wafer and the second wafer.
11. The method of claim 10 , wherein identifying the critical structures includes a user review of SEM images of the defects.
12. The method of claim 10 , wherein a wafer-level spatial signature includes at least one of numerical, radial, quadrant, and specialized signatures.
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July 12, 2010
November 26, 2013
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