An amorphous carbon film and an interlayer insulation film are formed in a memory cell region and a peripheral circuit region, respectively. An insulating film is formed on the amorphous carbon film and the interlayer insulation film. A portion of the insulating film that corresponds to capacitors on the amorphous carbon film is removed so that lower electrodes of the capacitors are supported from opposite sides of the lower electrodes. An insulating film pattern continuously extends from the memory cell region to the peripheral circuit region wholly covered with the insulating film pattern. Subsequently, the amorphous carbon film is removed to leave the capacitors supported by the insulating film pattern on both sides of the lower electrodes.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of manufacturing a semiconductor device, the method comprising: forming a first amorphous carbon film in a memory cell region of a semiconductor substrate and forming a first peripheral interlayer insulation film in a peripheral circuit region of the semiconductor substrate; forming a first insulating film so that the first amorphous carbon film and the first peripheral interlayer insulation film are covered with the first insulating film; removing a portion of the first insulating film that corresponds to a capacitor portion to be formed in the memory cell region so as to leave the remaining portion of the first insulating film which sandwiches the capacitor portion from at least opposite sides of the capacitor portion and which forms a first insulating film pattern continuously extending from the memory cell region to the peripheral circuit region; forming a capacitor in the capacitor portion from which the first insulating film has been removed; and then removing the first amorphous carbon film.
2. The method as recited in claim 1 , further comprising: forming a second amorphous carbon film on the first insulating film pattern and the first amorphous carbon film and forming a second peripheral interlayer insulation film on the first insulating film pattern in the peripheral circuit region, after the first insulating film pattern is formed; forming a second insulating film so that the second amorphous carbon film and the second peripheral interlayer insulation film are covered with the second insulating film; and removing a portion of the second insulating film that corresponds to the capacitor portion to be formed in the memory cell region so as to leave the remaining portion of the second insulating film which sandwiches the capacitor portion from at least opposite sides of the capacitor portion and which forms a second insulating film pattern continuously extending from the memory cell region to the peripheral circuit region, wherein the removing of the first amorphous carbon film includes removing the second amorphous carbon film.
3. The method as recited in claim 2 , wherein the portion of the first insulating film removed in the first insulating film pattern is in a form of a groove linearly extending in a predetermined direction, and the portion of the second insulating film removed in the second insulating film pattern is in a form of a groove linearly extending in a direction crossing the predetermined direction.
4. A method of manufacturing a semiconductor device, the method comprising: forming a first amorphous carbon film on a semiconductor substrate; forming a first insulating film so that the first amorphous carbon film is covered with the first insulating film; forming a first pattern in the first insulating film; forming a second amorphous carbon film so that the first pattern is filled with the second amorphous carbon film; forming a second insulating film so that the second amorphous carbon film is covered with the second insulating film; forming a second pattern in the second insulating film; forming a hole extending from the second insulating film to the first amorphous carbon film while using the second pattern as a mask; forming a conductive film so that an inner wall of the hole is covered with the conductive film; and removing the first amorphous carbon film and the second amorphous carbon film after the forming of the conductive film.
5. The method as recited in claim 4 , further comprising: forming a mask film so that the second pattern is filled with the mask film; and forming a mask pattern in the mask film, wherein the forming of the hole includes forming the hole extending from the mask film to the first amorphous carbon film while using the mask pattern as a mask.
6. The method as recited in claim 5 , wherein at least part of the mask pattern overlaps the second pattern in a two-dimensional view.
7. The method as recited in claim 5 , wherein the first pattern is formed by a groove, the second pattern is formed by a groove extending perpendicular to the groove of the first pattern, and the mask pattern is formed by a hole.
8. The method as recited in claim 5 , wherein the first pattern and the mask pattern are formed by a groove, the second pattern is formed by a groove extending perpendicular to the grooves of the first pattern and the mask pattern.
9. The method as recited in claim 4 , wherein at least part of the second pattern overlaps the first pattern in a two-dimensional view.
10. The method as recited in claim 4 , wherein the first pattern is formed by a hole, and the second pattern is formed by a hole.
11. The method as recited in claim 4 , wherein the first pattern is formed by a groove, and the second pattern is formed by a hole.
12. The method as recited in claim 4 , further comprising: forming a first groove in the first amorphous carbon film so that a formation region in which the hole is to be formed is surrounded by the first groove; forming a third insulating film so that the first groove is filled with the third insulating film; forming a second groove in the second amorphous carbon film so that a region in which the hole is to be formed is surrounded by the second groove; and forming a fourth insulating film so that the second groove is filled with the fourth insulating film, wherein, in the removing of the first amorphous carbon film and the second amorphous carbon film, the third insulating film is connected to the first insulating film, and the fourth insulating film is connected to the second insulating film.
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April 25, 2012
January 28, 2014
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