Patentable/Patents/US-8658454
US-8658454

Method of fabricating a solar cell

PublishedFebruary 25, 2014
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

Methods of fabricating solar cells are described. A porous layer may be formed on a surface of a substrate, the porous layer including a plurality of particles and a plurality of voids. A solution may be dispensed into one or more regions of the porous layer to provide a patterned composite layer. The substrate may then be heated.

Patent Claims
18 claims

Legal claims defining the scope of protection, as filed with the USPTO.

1

1. A method of fabricating a solar cell, the method comprising: forming a porous layer on a surface of a substrate, the porous layer comprising a plurality of particles and a plurality of voids; dispensing a solution into first and second regions, but not into a region between the first and second regions, of the porous layer to provide a patterned composite layer; etching to remove the region between the first and second regions without etching the first and second regions; and, subsequently, heating the substrate.

2

2. The method of claim 1 , wherein heating the substrate comprises consolidating the patterned composite layer.

3

3. The method of claim 1 , wherein dispensing the solution comprises dispensing a solution comprising a dopant source of charge carrier impurity atoms for the substrate.

4

4. The method of claim 3 , wherein heating the substrate comprises driving the charge carrier impurity atoms of the dopant source into the substrate.

5

5. The method of claim 4 , wherein the dopant source is an N-type dopant source for silicon, the method further comprising: dispensing a second solution into one or more other regions of the porous layer to provide a dual-patterned composite layer, wherein dispensing the second solution comprises dispensing a solution comprising a P-type dopant source of charge carrier impurity atoms for the substrate, and wherein heating the substrate further comprises driving the charge carrier impurity atoms of the P-type dopant source into the substrate.

6

6. The method of claim 1 , wherein forming the porous layer on the surface of the substrate comprises forming each void of the plurality of voids to have a dimension suitable to receive the solution at the surface of the substrate and to restrict lateral diffusion of the solution.

7

7. The method of claim 1 , wherein dispensing the solution comprises using an ink jet process.

8

8. The method of claim 7 , wherein the solution has a viscosity of approximately 10 centipoise.

9

9. The method of claim 1 , wherein forming the porous layer on the substrate comprises forming the porous layer on, and conformal with, a surface having a surface roughness, wherein the porous layer has a thickness approximately in the range of 0.5-20 microns.

10

10. The method of claim 1 , wherein the porous layer is a solid, and wherein forming the porous layer comprises: providing, as a mixture, the plurality of particles and a solvent; and evaporating the solvent to provide the porous layer from the mixture.

11

11. A method of fabricating a solar cell, the method comprising: forming a porous layer on a surface of a substrate, the porous layer comprising a plurality of particles and a plurality of voids; dispensing a solution into first and second regions, but not into a region between the first and second regions, of the porous layer to provide a patterned composite layer, the solution comprising a dopant source of charge carrier impurity atoms for the substrate; and etching to remove the region between the first and second regions without etching the first and second regions.

12

12. The method of claim 11 , wherein the dopant source is an N-type dopant source for silicon, the method further comprising: dispensing a second solution into one or more other regions of the porous layer to provide a dual-patterned composite layer, wherein dispensing the second solution comprises dispensing a solution comprising a P-type dopant source of charge carrier impurity atoms for the substrate.

13

13. The method of claim 12 , wherein dispensing the solution and the second solution comprises dispensing both the solution and the second solution in a single pass of the porous layer.

14

14. The method of claim 12 , wherein dispensing the solution and the second solution comprises dispensing the solution in a first pass of the porous layer and dispensing the second solution in a second, separate, pass of the porous layer.

15

15. The method of claim 11 , wherein forming the porous layer on the surface of the substrate comprises forming each void of the plurality of voids to have a dimension suitable to receive the solution at the surface of the substrate and to restrict lateral diffusion of the solution.

16

16. The method of claim 11 , wherein dispensing the solution comprises using an ink jet process.

17

17. The method of claim 11 , wherein forming the porous layer on the substrate comprises forming the porous layer on, and conformal with, a surface having a surface roughness, wherein the porous layer has a thickness approximately in the range of 0.5-20 microns.

18

18. The method of claim 11 , wherein the porous layer is a solid, and wherein forming the porous layer comprises: providing, as a mixture, the plurality of particles and a solvent; and evaporating the solvent to provide the porous layer from the mixture.

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Patent Metadata

Filing Date

September 20, 2010

Publication Date

February 25, 2014

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