Manufacturing method thereof and a semiconductor device

1. A manufacturing method of a semiconductor device, comprising: forming a lead frame including copper; and forming a copper oxide layer on the lead frame by immersing the lead frame into a solution of a strong oxidizer, the copper oxide layer including a first copper oxide and a second copper oxide, a thickness of the copper oxide layer being from 10 Angstroms to 1000 Angstroms, and the lead frame being taken out of the solution of strong oxidizer before the second copper oxide in the form of the needle crystals is formed.

2. The manufacturing method as claimed in claim 1 , further comprising forming a metal on a part of the lead frame by plating before forming the copper oxide layer.

3. The manufacturing method as claimed in claim 2 , wherein the lead frame includes an inner lead, and the metal is formed on a tip of the inner lead.

4. The manufacturing method as claimed in claim 2 , wherein the metal includes silver.

5. The manufacturing method as claimed in claim 2 , further comprising: forming an organic discoloration preventing agent on the lead frame after forming the metal and before forming the copper oxide layer; and removing the organic discoloration preventing agent before forming the copper oxide layer.

6. The manufacturing method as claimed in claim 5 , wherein the organic discoloration preventing agent is removed by using the solution of the strong oxidizer.

7. The manufacturing method as claimed in claim 1 , wherein the first copper oxide is Cu 2 O and the second copper oxide is CuO.